Power Semiconductor Research Center

Works Published in 2023

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Displaying all 7 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2023 book

The IGBT Device: Physics, Design and Applications of the Insulated Gate Bipolar Transistor

(2nd ed.). Amsterdam: Elsevier.

By: B. Baliga

Source: NC State University Libraries
Added: November 13, 2023

2023 article

Bidirectional Three-phase Current Source Converter based Buck-boost AC/DC System using Bidirectional Switches

2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC.

By: R. Narwal n , S. Bhattacharya n , B. Baliga  n & D. Hopkins n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Bidirectional switches; four-quadrant switches; current source inverter; interleaved buck converter; modulation; commutation; SiC bidirectional FET; BiDFET; CSI; CSC
Source: Web Of Science
Added: October 10, 2023

2023 journal article

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application

IEEE ACCESS, 11, 89277–89289.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: 3.3 kV SiC diode; 3.3 kV SiC MOSFET; common-source (CS); common-drain (CD); current source inverter (CSI); current switch; medium-voltage (MV); reverse-voltage blocking (RVB) switch; wide-bandgap devices; GaN; SiC
Source: Web Of Science
Added: September 18, 2023

2023 article

Analysis and Characterization of Four-quadrant Switches based Commutation Cell

2023 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, pp. 209–216.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Commutation cell; four quadrant switch; SiC Bidirectional FET; BiDFET; characterization; switching loss; dead time; overlap time; commutation scheme; matrix converter
Source: Web Of Science
Added: September 5, 2023

2023 journal article

Silicon Carbide Power Devices: Progress and Future Outlook

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 11(3), 2400–2411.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: 4H-silicon carbide (SiC); Baliga short-circuit improvement concept (BaSIC) topology; Baliga's figure-of-merit (BFOM); bidirectional field effect transistor (BiDFET); JBSFET; junction-barrier-Schottky (JBS) diode; monolithic reverse blocking transistor (MRBT); MOSFET; planar-gate; short-circuit (SC) capability; trench-gate
Source: Web Of Science
Added: July 31, 2023

2023 journal article

The BiDFET Device and Its Impact on Converters

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 20–27.

By: B. Baliga  n, D. Hopkins n , S. Bhattacharya n , A. Agarwal*, T. Cheng n, R. Narwal n , A. Kanale n, S. Shah, K. Han*

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Photovoltaic systems; Motor drives; Capacitors; Rectifiers; Inverters; Topology; Matrix converters
Source: Web Of Science
Added: April 24, 2023

2023 journal article

Power Conversion Systems Enabled by SiC BiDFET Device

IEEE POWER ELECTRONICS MAGAZINE, 10(1), 39–43.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Motor drives; Silicon carbide; Power supplies; PIN photodiodes; Switches; Packaging; Transformers
Source: Web Of Science
Added: April 24, 2023

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