TY - JOUR TI - Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD AU - Li, V. Z. Q. AU - Mirabedini, M. R. AU - Vogel, E. AU - Henson, K. AU - Batchelor, A. D. AU - Wortman, J. J. AU - Kuehn, R. T. T2 - Electrochemical and Solid State Letters DA - 1998/// PY - 1998/// VL - 1 IS - 3 SP - 153-155 ER - TY - JOUR TI - Trends in residual stress for GaN/AlN/6H-SiC heterostructures AU - Edwards, NV AU - Bremser, MD AU - Davis, RF AU - Batchelor, AD AU - Yoo, SD AU - Karan, CF AU - Aspnes, DE T2 - APPLIED PHYSICS LETTERS AB - We discuss trends in residual stress as a function of film thickness, growth temperature, and substrate orientation for GaN/AlN/6H–SiC heterostructures. Films are mostly compressive for samples less than about 0.7 μm thick, are tensile up to about 2 μm, then abruptly become less tensile with stress values near 1 kbar thereafter. We interpret this as a successive relief of lattice mismatch and thermal stresses culminating in a catastrophic relief by unknown mechanisms at moderate thicknesses. These data indicate that relaxation processes in these heterostructures are not as well understood as previously supposed. DA - 1998/11/8/ PY - 1998/11/8/ DO - 10.1063/1.122597 VL - 73 IS - 19 SP - 2808-2810 SN - 1077-3118 ER - TY - JOUR TI - Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy AU - Bremser, MD AU - Perry, WG AU - Nam, OH AU - Griffis, DP AU - Loesing, R AU - Ricks, DA AU - Davis, RF T2 - JOURNAL OF ELECTRONIC MATERIALS DA - 1998/4// PY - 1998/4// DO - 10.1007/s11664-998-0392-9 VL - 27 IS - 4 SP - 229-232 SN - 0361-5235 KW - 6H-SiC(0001) KW - acceptor doping KW - AlxGa1-xN KW - GaN KW - charge scattering KW - donor doping KW - electron mobility ER - TY - JOUR TI - Chemically and geometrically enhanced focused ion beam micromachining AU - Russell, PE AU - Stark, TJ AU - Griffis, DP AU - Phillips, , JR AU - Jarausch, KF T2 - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B AB - Improvements in focused ion beam (FIB) material removal rates utilizing geometric and chemical enhancement were investigated. Geometrical optimization of FIB micromachining of Permalloy and diamond was investigated to determine the magnitude of material removal rate gains that could be attained by increasing the angle of the ion beam with respect to the sample surface normal. The combination of geometrical optimization with chemical enhancement (C2Cl4 for Permalloy and H2O and XeF2 for diamond) was then investigated to determine whether additional gains in material removal rate could be attained. FIB sharpening of a diamond nanoindenter tip is also presented as a practical example of diamond micromachining with H2O as the removal rate enhancing species. DA - 1998/// PY - 1998/// DO - 10.1116/1.590197 VL - 16 IS - 4 SP - 2494-2498 SN - 1071-1023 ER -