TY - JOUR TI - Electrical characterization of InGaN quantum well p-n heterostructures AU - Gonzalez, JC AU - Silva, MIN AU - Bunker, KL AU - Batchelor, AD AU - Russell, PE T2 - MICROELECTRONICS JOURNAL AB - In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p–n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution. DA - 2003/// PY - 2003/// DO - 10.1016/S0026-2692(03)00072-7 VL - 34 IS - 5-8 SP - 455-457 SN - 0026-2692 KW - InGaN KW - electrical force microscopy KW - p-n heterostructure ER - TY - PAT TI - Chemically enhanced focused ion beam micro-machining of copper AU - Russell, P. E. AU - Griffis, D. P. AU - Gonzales Perez, J. C. C2 - 2003/// DA - 2003/// PY - 2003/// ER - TY - JOUR TI - Diffusion of 18 elements implanted into thermally grown SiO2 AU - Francois-Saint-Cyr, HG AU - Stevie, FA AU - McKinley, JM AU - Elshot, K AU - Chow, L AU - Richardson, KA T2 - JOURNAL OF APPLIED PHYSICS AB - Diffusion data are presented for 18 elements implanted in SiO2 layers thermally grown on silicon and annealed at temperatures ranging from 300 to 1000 °C. Most species studied, (e.g., Be, B, Al, Sc, Ti, V, Zn, Ga, and Mo), showed negligible diffusion over the examined temperature range. In general, this study has shown that the diffusivity of dopants or impurities in SiO2 is significantly smaller than that in silicon. However we also observed that several elements (e.g., Rb and In) have a higher diffusivity in SiO2 than in Si. Because Ga and In are both used as sources for focused ion beam analyses, the lack of Ga diffusion and the movement of In in SiO2 is of interest. DA - 2003/12/15/ PY - 2003/12/15/ DO - 10.1063/1.1624487 VL - 94 IS - 12 SP - 7433-7439 SN - 0021-8979 ER - TY - JOUR TI - Etching characteristics of chromium thin films by an electron beam induced surface reaction AU - Wang, JH AU - Griffis, DP AU - Garcia, R AU - Russell, PE T2 - SEMICONDUCTOR SCIENCE AND TECHNOLOGY AB - In this paper, we demonstrate the etching of chromium (Cr) film on quartz through a surface reaction induced by an electron beam and enhanced with XeF2 gas. We have studied the influences of the electron beam energy, the gas flow rate and the specimen composition on the etch rate. The electron beam energy has significant influence on the etch rate. The etch rate made by an electron beam of 20 keV is five times higher compared to that made by a beam of 10 keV. The XeF2 gas flow rate shows little effect on the etch rate when the gas pressure is higher than 2 × 10−6 Torr. The structure and grain size of the Cr film did not show any apparent change under exposure to XeF2 or when irradiated by an electron beam, while the composition of Cr has a significant effect on the etch process. The material removal of Cr induced by an electron beam means that it can be applied to the direct fabrication of microstructures on Cr films and that it solves the contamination problem in Cr mask repair. DA - 2003/4// PY - 2003/4// DO - 10.1088/0268-1242/18/4/302 VL - 18 IS - 4 SP - 199-205 SN - 0268-1242 ER - TY - JOUR TI - Optimization of secondary ion mass spectrometry detection limit for N in SiC AU - Pivovarov, AL AU - Stevie, FA AU - Griffis, DP AU - Guryanov, GM T2 - JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A AB - Controlled changes in the Cs+ primary ion beam density and analytical expressions describing the sources (bulk concentration, memory effect, and adsorption of N from the residual vacuum) of secondary ion mass spectrometry analyte secondary ion intensities were used to determine the contributions to the N secondary ion intensity obtained during the analysis of trace levels of N in bulk SiC. This methodology allows the determination of N concentrations that can be substantially less than the apparent N secondary ion background intensity. It was shown that for the Cameca IMS-6F instrumental conditions used, memory effect is the main contributor to the N background signal. Taking into consideration the Cs+ beam diameter, the raster size, the diameter of the ion-extracted area, and the impurity secondary ion intensity, an optimized combination of primary ion beam current and raster size was determined that resulted in the best detection limit for N in bulk SiC. This detection limit for N in bulk SiC (∼6×1014 atoms/cm3) was obtained for a primary ion current of 100 nA, a raster size of 45 μm×45 μm, and a secondary ion extraction area diameter of 30 μm. DA - 2003/// PY - 2003/// DO - 10.1116/1.1595108 VL - 21 IS - 5 SP - 1649-1654 SN - 0734-2101 ER -