Analytical Instrumentation Facility - 1999

Russell, P. E., Griffis, D. P., Shedd, G. M., Stark, T. J., & Vitarelli, J. (1999). Method for water vapor enhanced charged-particle-beam machining. Washington, DC: U.S. Patent and Trademark Office.

Neves, B. R. A., Salmon, M. E., Russell, P. E., & Troughton, E. B. (1999). Comparative study of field emission-scanning electron microscopy and atomic force microscopy to assess self-assembled monolayer coverage on any type of substrate. MICROSCOPY AND MICROANALYSIS, 5(6), 413–419. https://doi.org/10.1017/S1431927699990475

PA O'Neil, Ozturk, M. C., Batchelor, A. D., & Maher, D. M. (1999). Effects of oxygen on selective silicon deposition using disilane. MATERIALS LETTERS, 38(6), 418–422. https://doi.org/10.1016/S0167-577X(98)00200-6

Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., Smith, T., … Davis, R. (1999). Pendeo-epitaxy of gallium nitride thin films. Applied Physics Letters, 75(2), 196–198. https://doi.org/10.1063/1.124317

Neves, B. R. A., Leonard, D. N., Salmon, M. E., Russell, P. E., & Troughton, E. B. (1999). Observation of topography inversion in atomic force microscopy of self-assembled monolayers. NANOTECHNOLOGY, 10(4), 399–404. https://doi.org/10.1088/0957-4484/10/4/307

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Quality of selective silicon epitaxial films deposited using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343. https://doi.org/10.1149/1.1391937

Gehrke, T., Linthicum, K. J., Thomson, D. B., Rajagopal, P., Batchelor, A. D., & Davis, R. F. (1999). Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Xu, M. M., & Maher, D. M. (1999). Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352. https://doi.org/10.1149/1.1391938

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830

Neves, B. R. A., & Andrade, M. S. (1999). Identification of two patterns in magnetic force microscopy of shape memory alloys. APPLIED PHYSICS LETTERS, 74(14), 2090–2092. https://doi.org/10.1063/1.123767