Analytical Instrumentation Facility - 2002

Gonzalez, J. C., Silva, M. I. N., Griffis, D. P., & Russell, P. E. (2002). Improvements in focused ion beam micromachining of interconnect materials. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 2700–2704. https://doi.org/10.1116/1.1515310

Schwarz, S. M., Kempshall, B. W., Giannuzzi, L. A., & Stevie, F. A. (2002). Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system. ACTA MATERIALIA, 50(20), 5079–5084. https://doi.org/10.1016/S1359-6454(02)00362-2

Clark, M. H., Jones, K. S., & Stevie, F. A. (2002). Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 20, pp. 1663–1666. https://doi.org/10.1116/1.1497178

Ferryman, A. C., Fulghum, J. E., Giannuzzi, L. A., & Stevie, F. A. (2002). XPS analysis of FIB-milled Si. SURFACE AND INTERFACE ANALYSIS, 33(12), 907–913. https://doi.org/10.1002/sia.1448

Santiesteban, R. S., McKinley, J. M., Stevie, F. A., Flatch, P., & Rodriguez, O. (2002). In-fab techniques for baselining implant dose, contamination. Solid State Technology, 45(8), 63-.

Loesing, R., Guryanov, G. M., Phillips, M. S., & Griffis, D. P. (2002). Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 20, pp. 507–511. https://doi.org/10.1116/1.1450588