Analytical Instrumentation Facility

Works Published in 1998

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

By: N. Edwards n, M. Bremser n, R. Davis n, A. Batchelor n, S. Yoo n, C. Karan n, D. Aspnes n

Source: Web Of Science
Added: August 6, 2018

1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

Chemically and geometrically enhanced focused ion beam micromachining

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2494–2498.

By: P. Russell n, T. Stark, D. Griffis, . Phillips & K. Jarausch

Source: Web Of Science
Added: August 6, 2018

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