Analytical Instrumentation Facility

College of Engineering

Works Published in 1998

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Displaying all 4 works

Sorted by most recent date added to the index first, which may not be the same as publication date order.

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1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

By: V. Li, M. Mirabedini, E. Vogel, K. Henson, A. Batchelor, J. Wortman, R. Kuehn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

By: N. Edwards n, M. Bremser n, R. Davis n, A. Batchelor n, S. Yoo n, C. Karan n, D. Aspnes n 

Source: Web Of Science
Added: August 6, 2018

1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
Source: Web Of Science
Added: August 6, 2018

1998 article

Chemically and geometrically enhanced focused ion beam micromachining

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 2494–2498.

By: P. Russell n, T. Stark, D. Griffis, . Phillips & K. Jarausch

Source: Web Of Science
Added: August 6, 2018