Analytical Instrumentation Facility

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

Comparative study of field emission-scanning electron microscopy and atomic force microscopy to assess self-assembled monolayer coverage on any type of substrate

MICROSCOPY AND MICROANALYSIS, 5(6), 413–419.

Effects of oxygen on selective silicon deposition using disilane

MATERIALS LETTERS, 38(6), 418–422.

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Observation of topography inversion in atomic force microscopy of self-assembled monolayers

NANOTECHNOLOGY, 10(4), 399–404.

Quality of selective silicon epitaxial films deposited using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2337–2343.

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(6), 2344–2352.

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

Identification of two patterns in magnetic force microscopy of shape memory alloys

APPLIED PHYSICS LETTERS, 74(14), 2090–2092.