Analytical Instrumentation Facility

College of Engineering

Works Published in 1999

Sorted by most recent date added to the index first, which may not be the same as publication date order.

1999 patent

Method for water vapor enhanced charged-particle-beam machining

Washington, DC: U.S. Patent and Trademark Office.

By: P. Russell, D. Griffis, G. Shedd, T. Stark & J. Vitarelli

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Comparative study of field emission-scanning electron microscopy and atomic force microscopy to assess self-assembled monolayer coverage on any type of substrate

Microscopy and Microanalysis, 5(6), 413–419.

By: B. Neves, M. Salmon, P. Russell & E. Troughton

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Effects of oxygen on selective silicon deposition using disilane

Materials Letters, 38(6), 418–422.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Observation of topography inversion in atomic force microscopy of self-assembled monolayers

Nanotechnology, 10(4), 399–404.

By: B. Neves, D. Leonard, M. Salmon, P. Russell & E. Troughton

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Quality of selective silicon Epitaxial films deposited using disilane and chlorine

Journal of the Electrochemical Society, 146(6), 2337–2343.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

Journal of the Electrochemical Society, 146(8), 3079–3086.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

Journal of the Electrochemical Society, 146(8), 3070–3078.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Effects of oxygen during selective silicon Epitaxial growth using disilane and chlorine

Journal of the Electrochemical Society, 146(6), 2344–2352.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards, A. Batchelor, I. Buyanova, L. Madsen, M. Bremser, R. Davis, D. Aspnes, B. Monemar

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Identification of two patterns in magnetic force microscopy of shape memory alloys

Applied Physics Letters, 74(14), 2090–2092.

By: B. Neves & M. Andrade

Source: NC State University Libraries
Added: August 6, 2018