Analytical Instrumentation Facility

College of Engineering

Works Published in 2004

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2004 journal article

Circuit editing of copper and low-k dielectrics in nanotechnology devices

Journal of Microscopy, 214(2004 Jun), 246–251.

By: F. Mosselveld, V. Makarov, T. Lundquist, D. Griffis & P. Russell

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Applied Surface Science, 231-232(2004 June 15), 781–785.

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Preface - Special Issue - Secondary Ion Mass Spectrometry SIMS XIV

Applied Surface Science, 231-232(2004 June 15), 1–2.

By: J. Hunter, B. Schueler & F. Stevie

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices

Applied Surface Science, 231-232(2004 June 15), 684–687.

By: M. Kachan, J. Hunter, D. Kouzminov, A. Pivovarov, J. Gu, F. Stevie, D. Griffis

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Applied Surface Science, 231-232(2004 June 15), 786–790.

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 350–354.

By: C. Gu, A. Pivovarov, R. Garcia, F. Stevie, D. Griffis, J. Moran, L. Kulig, J. Richards

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Diffusion profiles of high dosage Cr and V ions implanted into silicon

Journal of Applied Physics, 96(2), 1053–1058.

By: P. Zhang, F. Stevie, R. Vanfleet, R. Neelakantan, M. Klimov, D. Zhou, L. Chow

Source: NC State University Libraries
Added: August 6, 2018

2004 journal article

Site-specific SIMS backside analysis

Applied Surface Science, 231-232(2004 June 15), 663–667.

Source: NC State University Libraries
Added: August 6, 2018