Analytical Instrumentation Facility

Circuit editing of copper and low-k dielectrics in nanotechnology devices

Journal of Microscopy, 214(2004 Jun), 246–251.

Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument

Applied Surface Science, 231-232(2004 June 15), 781–785.

Preface - Special Issue - Secondary Ion Mass Spectrometry SIMS XIV

Applied Surface Science, 231-232(2004 June 15), 1–2.

O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices

Applied Surface Science, 231-232(2004 June 15), 684–687.

Improved charge neutralization method for depth profiling of bulk insulators using O-2(+) primary beam on a magnetic sector SIMS instrument

Applied Surface Science, 231-232(2004 June 15), 786–790.

Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(1), 350–354.

Diffusion profiles of high dosage Cr and V ions implanted into silicon

Journal of Applied Physics, 96(2), 1053–1058.

Site-specific SIMS backside analysis

Applied Surface Science, 231-232(2004 June 15), 663–667.