Analytical Instrumentation Facility

College of Engineering

Works Published in 2009

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Displaying 1 work

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2009 journal article

On the origin of aluminum-related cathodoluminescence emissions from sublimation grown 4H-SiC(11(2)over-bar0)

APPLIED SURFACE SCIENCE, 255(13-14), 6535–6539.

By: S. Bishop n, C. Reynolds n, J. Molstad*, F. Stevie n, D. Barnhardt n & R. Davis*

author keywords: 4H-SiC; Chemical vapor deposition processes-hot wall epitaxy and sublimation epitaxy; Interfacial impurities; Cathodoluminescence; Secondary ion mass spectrometry; Impurity luminescence
Source: Web Of Science
Added: August 6, 2018