TY - JOUR TI - Cephalic phase of gastric acid secretion in dogs: Impact of smell, sight, memory, and taste AU - Powers, M.A. AU - Schiffman, S.S. AU - Lawson, D.C. AU - Pappas, T.N. AU - Taylor, I.L. T2 - Digestive Diseases and Sciences DA - 1989/// PY - 1989/// VL - 4 SP - 984 ER - TY - JOUR TI - Preferences among three potassium supplements in elderly patients AU - Schiffman, S.S. AU - Warwick, Z.S. T2 - Consultant Pharmacist DA - 1989/// PY - 1989/// SP - 640-642 ER - TY - JOUR TI - Bitter taste AU - Schiffman, S.S. T2 - Journal of the American Medical Association DA - 1989/// PY - 1989/// VL - 23 SP - 3347 ER - TY - JOUR TI - Detection thresholds of sodium salts are related to molar conductivity of the anion AU - Schiffman, S.S. AU - Crumbliss, A.L. AU - Warwick, Z.S. T2 - Chemical Senses DA - 1989/// PY - 1989/// VL - 14 SP - 742–743 ER - TY - JOUR TI - The effects of age and race on thresholds and magnitude estimates of edible gums AU - Schiffman, S.S. AU - Rascoe, D. AU - Garcia, R.A. T2 - Chemical Senses DA - 1989/// PY - 1989/// VL - 14 SP - 743 ER - TY - JOUR TI - Taste mixtures can lead to syntheses of new 'non-basic' tastes, or suppression AU - Erickson, R.P. AU - Warwick, Z.S. AU - Schiffman, S.S. T2 - Chemical Senses DA - 1989/// PY - 1989/// VL - 14 SP - 744–745 ER - TY - JOUR TI - Adverse reactions to aspartame AU - Schiffman, S.S. T2 - Journal of Applied Nutrition DA - 1989/// PY - 1989/// VL - 41 SP - 40 ER - TY - JOUR TI - Use of Flavor-Amplified Foods to Improve Nutritional Status in Elderly Persons AU - Schiffman, Susan S. AU - Warwick, Zoe S. T2 - Annals of the New York Academy of Sciences AB - Annals of the New York Academy of SciencesVolume 561, Issue 1 p. 267-276 Use of Flavor-Amplified Foods to Improve Nutritional Status in Elderly Persons SUSAN S. SCHIFFMAN, SUSAN S. SCHIFFMAN Department of Psychiatry Duke University Medical Center Durham, North Carolina 27710Search for more papers by this authorZOE S. WARWICK, ZOE S. WARWICK Department of Psychiatry Duke University Medical Center Durham, North Carolina 27710Search for more papers by this author SUSAN S. SCHIFFMAN, SUSAN S. SCHIFFMAN Department of Psychiatry Duke University Medical Center Durham, North Carolina 27710Search for more papers by this authorZOE S. WARWICK, ZOE S. WARWICK Department of Psychiatry Duke University Medical Center Durham, North Carolina 27710Search for more papers by this author First published: June 1989 https://doi.org/10.1111/j.1749-6632.1989.tb20988.xCitations: 26AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Citing Literature Volume561, Issue1Nutrition and the Chemical Senses in Aging: Recent Advances and Current Research NeedsJune 1989Pages 267-276 RelatedInformation DA - 1989/6// PY - 1989/6// DO - 10.1111/j.1749-6632.1989.tb20988.x VL - 561 IS - 1 SP - 267–276 SN - 0077-8923 1749-6632 UR - http://dx.doi.org/10.1111/j.1749-6632.1989.tb20988.x ER - TY - JOUR TI - Eating Restraint, Presentation Order, and Time of Day Are Related to Sweet Taste Preferences AU - Warwick, Zoe S. AU - Costanzo, Philip R. AU - Gill, James M. AU - Schiffman, Susan S. T2 - Annals of the New York Academy of Sciences AB - Annals of the New York Academy of SciencesVolume 575, Issue 1 p. 588-591 Eating Restraint, Presentation Order, and Time of Day Are Related to Sweet Taste Preferences ZOE S. WARWICK, ZOE S. WARWICK Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorPHILIP R. COSTANZO, PHILIP R. COSTANZO Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorJAMES M. GILL, JAMES M. GILL Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorSUSAN S. SCHIFFMAN, SUSAN S. SCHIFFMAN Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this author ZOE S. WARWICK, ZOE S. WARWICK Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorPHILIP R. COSTANZO, PHILIP R. COSTANZO Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorJAMES M. GILL, JAMES M. GILL Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this authorSUSAN S. SCHIFFMAN, SUSAN S. SCHIFFMAN Departments of Psychology and Psychiatry Duke University Durham, North Carolina 27706Search for more papers by this author First published: December 1989 https://doi.org/10.1111/j.1749-6632.1989.tb53305.xAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Volume575, Issue1The Psychobiology of Human Eating Disorders: Preclinical and Clinical PerspectivesDecember 1989Pages 588-591 RelatedInformation DA - 1989/12// PY - 1989/12// DO - 10.1111/j.1749-6632.1989.tb53305.x VL - 575 IS - 1 SP - 588–591 SN - 0077-8923 1749-6632 UR - http://dx.doi.org/10.1111/j.1749-6632.1989.tb53305.x ER - TY - JOUR TI - Aspartame and Headache: No Association Found in Clinical Study AU - Schiffman, Susan T2 - Cephalalgia DA - 1989/10// PY - 1989/10// DO - 10.1177/0333102489009s1056 VL - 9 IS - 10_suppl SP - 101-102 J2 - Cephalalgia LA - en OP - SN - 0333-1024 1468-2982 UR - http://dx.doi.org/10.1177/0333102489009s1056 DB - Crossref ER - TY - JOUR TI - Thinness—Not obesity—Has a genetic component AU - Costanzo, Philip R. AU - Schiffman, Susan S. T2 - Neuroscience & Biobehavioral Reviews AB - The body mass of adoptees was compared with the body mass of both biologic and adoptive parents using data from the Danish Adoption Register. Chi-square analyses revealed that biologic heritability is small and is confined to thin, not obese body mass. It is probable that the inheritance of thin body mass constitutes a mild protective factor that mitigates against development of obesity caused by environmental factors. DA - 1989/3// PY - 1989/3// DO - 10.1016/s0149-7634(89)80052-1 VL - 13 IS - 1 SP - 55-58 J2 - Neuroscience & Biobehavioral Reviews LA - en OP - SN - 0149-7634 UR - http://dx.doi.org/10.1016/s0149-7634(89)80052-1 DB - Crossref ER - TY - JOUR TI - Changes in taste and smell over the life span; their effect on appetite and nutrition in the elderly AU - Schiffman, S.S. AU - Warwick, Z.S. T2 - Appetite DA - 1989/2// PY - 1989/2// DO - 10.1016/0195-6663(89)90087-1 VL - 12 IS - 1 SP - 77 J2 - Appetite LA - en OP - SN - 0195-6663 UR - http://dx.doi.org/10.1016/0195-6663(89)90087-1 DB - Crossref ER - TY - JOUR TI - Designing Hybrid Power Supplies AU - Hopkins, D.C. T2 - Powertechnics Magazine DA - 1989/6// PY - 1989/6// VL - 5 IS - 6 SP - 31–34 ER - TY - RPRT TI - High-Performance, High-Frequency, Distributed, Computer Power Supply Technology AU - Hopkins, D.C. AU - Lee, F.C. A3 - Digital Equipment Corporation DA - 1989/6// PY - 1989/6// PB - Digital Equipment Corporation ER - TY - JOUR TI - Thick-Film Technique Helps Hybridized, 2 MHz ZC-QR Converter Achieve 78% Efficiency AU - Hopkins, D.C. T2 - Power Conversion & Intelligent Motion DA - 1989/7// PY - 1989/7// VL - 15 IS - 7 SP - 57–66 ER - TY - RPRT TI - Testing of High Power Devices AU - Hopkins, D.C. A3 - U.S. Army DA - 1989/9// PY - 1989/9// M1 - LABCOM-ETDL, DAAL03-86-D-001, DO 1576 M3 - Final Report PB - U.S. Army SN - LABCOM-ETDL, DAAL03-86-D-001, DO 1576 ER - TY - RPRT TI - High Density Power Transformer AU - Hopkins, D.C. A3 - Unisys Corporation DA - 1989/12// PY - 1989/12// PB - Unisys Corporation ER - TY - CONF TI - Power-Hybrid Design of a High-Frequency ZCS-QRC AU - Hopkins, D.C. AU - Jovanovic, M.M. AU - Lee, F.C. AU - Stephenson, F.W. T2 - Fourth Annual High Frequency Power Conversion Conference C2 - 1989/// C3 - Proceedings of the Fourth Annual High Frequency Power Conversion Conference CY - Naples, FL DA - 1989/// PY - 1989/5/14/ SP - 304–317 ER - TY - CONF TI - The Microelectronics Program at Auburn University AU - Johnson, R.W. AU - Hopkins, D.C. AU - Jaeger, R.C. T2 - ISHM International Symposium on Microelectronics C2 - 1989/10// C3 - ISHM International Symposium on Microelectronics Proceedings CY - Baltimore, MD DA - 1989/10// PY - 1989/10// SP - 367–375 ER - TY - CONF TI - The Effects of Power Hybridization on Power Electronic Circuits AU - Hopkins, D.C. T2 - ISHM International Symposium on Microelectronics C2 - 1989/10// C3 - ISHM International Symposium on Microelectronics Proceedings CY - Baltimore, MD DA - 1989/10// PY - 1989/10// SP - 647–654 ER - TY - CONF TI - Thick-film power hybridization of switchmode power circuits AU - Hopkins, D.C. T2 - Fourth Annual IEEE Applied Power Electronics Conference and Exposition AB - To help the electrical circuit designer better understand what is involved in a hybrid circuit design and to aid the designer hybrid-compatible circuits, the author presents a tutorial on the design of a power hybrid circuit. The structure of a power hybrid circuit is given along with the device's material properties and dimensions. Thick film and copper-on-ceramic techniques are presented. The designer can use the information to understand both the electrical and thermal limitations of such circuits. An example of a 2 MHz, off-line, thick-film-hybrid DC-DC-converter is provided.< > C2 - 1989/// C3 - Proceedings, Fourth Annual IEEE Applied Power Electronics Conference and Exposition CY - Baltimore, MD DA - 1989/// PY - 1989/3/13/ DO - 10.1109/apec.1989.36977 PB - IEEE UR - http://dx.doi.org/10.1109/apec.1989.36977 ER - TY - JOUR TI - Evaluation and design of megahertz-frequency off-line zero-current-switched quasi-resonant converters AU - Jovanovic, M.M. AU - Hopkins, D.C. AU - Lee, F.C.Y. T2 - IEEE Transactions on Power Electronics AB - A performance comparison of flyback, forward, and half-bridge zero-current-switched quasi-resonant converter topologies for high-frequency offline applications is presented. It is shown that the half-bridge topology with secondary side resonance operating in half-wave mode is most suitable. A complete design procedure for the half-bridge power stage and the voltage-feedback control is presented together with experimental results for a 300 V DC hybridized converter which operates with conversion frequencies from 400 kHz to 2 MHz and delivers 1.5-16 A at 5 V DC.< > DA - 1989/1// PY - 1989/1// DO - 10.1109/63.21882 VL - 4 IS - 1 SP - 136-146 J2 - IEEE Trans. Power Electron. OP - SN - 0885-8993 1941-0107 UR - http://dx.doi.org/10.1109/63.21882 DB - Crossref ER - TY - JOUR TI - Hybridized off-line 2-MHz zero-current-switched quasi-resonant converter AU - Hopkins, D.C. AU - Jovanovic, M.M. AU - Lee, F.C.Y. AU - Stephenson, F.W. T2 - IEEE Transactions on Power Electronics AB - Thick-film hybrid technology is used to develop a half-bridge, half-wave, zero-current-switched quasi-resonant converter for 300 V DC offline application. With a conversion frequency of 2 MHz the converter delivers 80 W at 78% efficiency with a power density, excluding heat sink, of 21 W/in/sup 3/. The operation and detailed electrical and hybrid design of the circuit are described. Also described is a 2 MHz hybridized gate drive.< > DA - 1989/1// PY - 1989/1// DO - 10.1109/63.21883 VL - 4 IS - 1 SP - 147-154 J2 - IEEE Trans. Power Electron. OP - SN - 0885-8993 1941-0107 UR - http://dx.doi.org/10.1109/63.21883 DB - Crossref ER - TY - JOUR TI - Plated copper on ceramic substrates for power hybrid circuits AU - Johnson, R.W. AU - Weeks, R. AU - Hopkins, D.C. AU - Muir, J. AU - Williams, J.R. T2 - IEEE Transactions on Components, Hybrids, and Manufacturing Technology AB - Plated copper on ceramic has been evaluated for fabrication of power hybrid circuits. The copper is plated using a semiadditive process that yields rectangular conductor cross sections. Copper thicknesses can be varied from 12 to 150 mu m depending on electrical current requirements. Typically, a 2.5- mu m nickel barrier layer and a 1.25- mu m gold layer are plated onto the copper metallization. The soldered adhesion (62Sn/36Pb/2Ag) of the metallization has been studied. No adhesion degradation was observed after storage for 1000 h at 150 degrees C or after 118 thermal cycles between -65 degrees C and 125 degrees C. The bonding of small-diameter gold-wire bonding to the Au/Ni/Cu metallization was evaluated. No reduction in bond strength ( approximately=7.5 gf) was observed after 1000 h of storage at 150 degrees C. The bonding of large-diameter aluminium wire to the Au/Ni/Cu metallization was also studied. The average initial pull strength was 560 gf. After 2050 h at 150 degrees C, the average pull strength was 499 gf, while the average after 2050 h at 200 degrees C was 438 gf. Screen printable polyimide encapsulants were used for solder masking and high voltage insulation. Electrical properties were measured. To demonstrate the use of plated copper on ceramic, the power section of a 100-W DC-DC converter was fabricated.< > DA - 1989/// PY - 1989/// DO - 10.1109/33.49011 VL - 12 IS - 4 SP - 530-536 J2 - IEEE Trans. Comp., Hybrids, Manufact. Technol. OP - SN - 0148-6411 UR - http://dx.doi.org/10.1109/33.49011 DB - Crossref ER - TY - CONF TI - Decision Support Applications for Electric Power Distribution Facility Design and Management AU - Ramesh, V.C. AU - Lubkeman, David AU - Matulic, Ivan T2 - Second Symposium on Expert Systems Application to Power Systems Conference C2 - 1989/// C3 - Second Symposium on Expert Systems Application to Power Systems Conference Proceedings CY - Seattle, Washington DA - 1989/// PY - 1989/7/17/ SP - 303–309 ER - TY - CONF TI - Neural Network Applications for Data Interpretation and Diagnostic Analysis AU - Ebron, Sonja AU - Lubkeman, David AU - White, Mark AU - Harper, J. T2 - 1989 American Power Conference C2 - 1989/4/24/ C3 - Proceedings of the 1989 American Power Conference CY - Chicago, IL DA - 1989/4/24/ PY - 1989/4/24/ ER - TY - JOUR TI - Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area AU - Malik, R.J. AU - Lunardi, L.M. AU - Ryan, R.W. AU - Shunk, S.C. AU - Feuer, M.D. T2 - Electronics Letters AB - A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100–200 Å) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p+ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3 × 4.0 µm2 and current gain values independent of emitter area. DA - 1989/// PY - 1989/// DO - 10.1049/el:19890788 VL - 25 IS - 17 SP - 1175-1177 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024716469&partnerID=MN8TOARS ER - TY - JOUR TI - Quantum Functional Devices: Resonant-Tunneling Transistors, Circuits with Reduced Complexity, and Multiple-Valued Logic AU - Capasso, F. AU - Sen, S. AU - Beltram, F. AU - Lunardi, L.M. AU - Vengurlekar, A.S. AU - Smith, P.R. AU - Shah, N.J. AU - Malik, R.J. AU - Cho, A.Y. T2 - IEEE Transactions on Electron Devices AB - Recent advances in the area of quantum functional devices are discussed. After a discussion of the functional device concept, resonant-tunneling bipolar transistors (RTBTs) with a double barrier in the base region are described. Design considerations for RTBTs with ballistic injection and the first observation of minority-electron ballistic RT are presented. RTBTs using thermionic injection and exhibiting a high peak-to-valley ratio at room temperature in the transfer characteristics are also described. Multiple-state RTBTs and their DC and microwave performance are then discussed. Circuit applications of RTBTs also are discussed. It is shown that RTBTs allow the implementation of many analog and digital circuit functions with a greatly reduced number of transistors and show considerable promise for multiple-valued logic. Experimental results on frequency multipliers and parity bit generators are presented. Analog-to-digital converters are memory circuits are also discussed. Two novel superlattice-base transistors are reported. Negative transconductance is achieved by suppression of injection into minibands. Gated quantum-well RT transistors are also discussed.< > DA - 1989/// PY - 1989/// DO - 10.1109/16.40888 VL - 36 IS - 10 SP - 2065-2082 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024750508&partnerID=MN8TOARS ER - TY - JOUR TI - Microwave Multiple-State Resonant-Tunneling Bipolar Transistors AU - Lunardi, L.M. AU - Capasso, F. AU - Smith, P.R. AU - Sivco, D.L. AU - Cho, A.Y. T2 - IEEE Electron Device Letters AB - Fabrication and microwave performance of a multiple-state resonant-tunneling bipolar transistor (RTBT) are presented. This transistor exhibits a maximum DC current gain of 60 at room temperature and a cutoff frequency of 24 GHz. Frequency multiplication by a factor of five has been demonstrated with a single transistor.< > DA - 1989/// PY - 1989/// DO - 10.1109/55.31726 VL - 10 IS - 5 SP - 219-221 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84915300890&partnerID=MN8TOARS ER - TY - JOUR TI - Implant-induced high-resistivity regions in InP and InGaAs AU - Pearton, S.J. AU - Abernathy, C.R. AU - Panish, M.B. AU - Hamm, R.A. AU - Lunardi, L.M. T2 - Journal of Applied Physics AB - We have investigated the effects of ion bombardment on the electrical properties of intentionally doped InP and InGaAs grown by metalorganic molecular-beam epitaxy. The sheet resistivity and mobility of n+InP (Sn) and n+InGaAs (Sn) or p+InGaAs (Be) epilayers grown on semi-insulating InP substrates were measured as a function of ion species (O, B, H, or Fe), ion dose (1012–1015 cm−2), and post-implant annealing temperature (100–600 °C). In n+InP, the resistivity after bombardment goes through a maximum with annealing temperature, reaching a value of ∼106 Ω/⧠ for 0.5-μm-thick films after implantation with H or O and annealing at 200–300 °C. The as-grown resistivity is restored by annealing above 500 °C. Ion doses below 1012 cm−2 actually lead to a decrease in resistivity through the creation of shallow donor levels. By contrast, the implantation of Fe above a critical dose where the Fe density exceeds the dopant concentration leads to the formation of thermally stable, high-resistivity (&gt;106 Ω/⧠) material. The temperature dependence of the resistivity shows an activation energy of 0.67 eV, which corresponds to the acceptor level of substitutional Fe in InP. Both n+InGaAs and p+InGaAs show somewhat similar behavior after implantation with maximum resistivities of ∼105 Ω/⧠ regardless of implant species. Once again for relatively low doses of O or H (below ∼1013 cm−2 in this case) there is creation of shallow defect levels that lower the resistivity of the material. The formation of these levels in InP has been investigated in more detail by measuring the depth-dependent carrier profile in implanted high-resistivity InP. The profile of the damage-induced centers is in close correlation with the nuclear energy deposition profile of the implanted ion in some cases, and with the profiles of stoichiometric excess due to unequal recoil of the lattice constituents in other cases. DA - 1989/// PY - 1989/// DO - 10.1063/1.343533 VL - 66 IS - 2 SP - 656-662 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-21544456296&partnerID=MN8TOARS ER - TY - JOUR TI - AIGaAs/GaAs Heterojunction Bipolar Transistor Decision Circuit AU - Swartz, R.G. AU - Lunardi, L.M. AU - Malik, R.J. AU - Archer, V.D. AU - Feuer, M.D. AU - Walker, J.F. AU - Fullowan, T.R. T2 - Electronics Letters AB - An AlGaAs/GaAs heterojunction bipolar transistor (HBT) decision circuit has been designed and characterised for optical communications, using 3.5 μm emitter width transistors with cutoff frequency of 27 GHz. The maximum bit rate for a BER of 10−9 was 4.2 Gbit/s. At 2.0 Gbit/s, the dock phase margin was 240°. DA - 1989/// PY - 1989/// DO - 10.1049/el:19890087 VL - 25 IS - 2 SP - 118-119 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024305430&partnerID=MN8TOARS ER - TY - JOUR TI - Diffusion and drift of Si dopants in δ-doped n-type Al xGa1-xAs AU - Schubert, E.F. AU - Tu, C.W. AU - Kopf, R.F. AU - Kuo, J.M. AU - Lunardi, L.M. T2 - Applied Physics Letters AB - The study of diffusion and drift of Si in AlxGa1−xAs by means of capacitance-voltage measurements reveals that low substrate temperatures during growth by molecular beam epitaxy are required to achieve δ-function-like doping profiles. The diffusion coefficient of Si in Al0.3Ga0.7As is determined. We further show theoretically that the random Poisson distribution (usually assumed for dopant distributions in semiconductors) should be modified at high dopant concentrations due to repulsive interactions of impurities. DA - 1989/// PY - 1989/// DO - 10.1063/1.101059 VL - 54 IS - 25 SP - 2592-2594 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-36549100692&partnerID=MN8TOARS ER - TY - JOUR TI - Applications of knowledge-based programming to power engineering problems AU - Taylor, T. AU - Lubkeman, D. T2 - IEEE Transactions on Power Systems AB - Application of knowledge-based expert systems to typical power engineering problems involving diagnosis, control and design is described. A review of prototype projects completed at North Carolina State University serves to demonstrate what is involved in expert system development. The examples include a diagnostic tool for rotating-machine vibration problems, implementation of a distribution-feeder reconfiguration control scheme, and a design aid for distribution-feeder capacitor placement.< > DA - 1989/// PY - 1989/// DO - 10.1109/59.32498 VL - 4 IS - 1 SP - 345-352 J2 - IEEE Trans. Power Syst. OP - SN - 0885-8950 UR - http://dx.doi.org/10.1109/59.32498 DB - Crossref ER - TY - JOUR TI - Modeling interconnect yield in reconfigurable circuits AU - Franzon, P. T2 - Electronics Letters DA - 1989/8/31/ PY - 1989/8/31/ VL - 25 IS - 18 SP - 1225 – 1226 ER - TY - CONF TI - Comparison of Reconfiguration Schemes for Defect Tolerant Mesh Arrays AU - Franzon, P. C2 - 1989/10/22/ C3 - Proceedings of the 1989 Workshop on Defect Tolerance CY - Tampa, Florida DA - 1989/10/22/ ER - TY - CONF TI - Testing Features for Medical Electronics AU - Nagle, H.T. T2 - The 1989 IEEE Region 10 Colloquium C2 - 1989/// C3 - Proceedings of the 1989 IEEE Region 10 Colloquium DA - 1989/// ER - TY - CONF TI - Multicast Communication in Multiprocessor Systems AU - Byrd, G.T. AU - Saraiya, N. AU - Delagi, B.A. C2 - 1989/8// C3 - 18th International Conference on Parallel Processing DA - 1989/8// VL - I SP - 196–200 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024875963&partnerID=MN8TOARS ER - TY - CHAP TI - Fundamental interconnection issues AU - Hatamian, M. AU - Hornak, L.A. AU - Little, T. AU - Tewksbury, S.K. AU - Franzon, P. T2 - Electronic Materials Handbook PY - 1989/// VL - 1: Packaging SP - 1–11 PB - ASM International ER - TY - JOUR TI - Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors AU - Kuzuhara, M. AU - Kim, K. AU - Hess, K. T2 - IEEE Transactions on Electron Devices AB - The intrinsic switching characteristics of tunneling hot electron transfer amplifier (THETA) devices has been simulated using a time-dependent ensemble Monte Carlo method. Results which show that there is no significant difference between the switch-on and switch-off times of THETA devices and that these switching times are always larger than the average total transit time through the base and the collector barrier are presented. The choice of the base width is important to determine the base transport factor, but it is not a direct measure of the intrinsic switching speed. The importance of velocity overshoot in the collector barrier region for ultra-high-speed device operation is demonstrated. An improved device structure that leads to subpicosecond switching speeds in the THETA structures is proposed.< > DA - 1989/// PY - 1989/// DO - 10.1109/16.21190 VL - 36 IS - 1 SP - 118-123 J2 - IEEE Trans. Electron Devices OP - SN - 0018-9383 UR - http://dx.doi.org/10.1109/16.21190 DB - Crossref ER - TY - JOUR TI - Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes AU - Higman, J. M. AU - Kim, K. AU - Hess, K. AU - van Zutphen, T. AU - Boots, H. M. J. T2 - Journal of Applied Physics AB - Results of Monte Carlo simulations of Si and GaAs p-n electron emitters are presented. A single-electron Monte Carlo transport simulation is used to obtain the total number, including avalanche multiplication, of electrons which reach the surface of the semiconductor, as well as the fraction of these which overcome the work function and are emitted into the vacuum. The distribution function is obtained, as well as ensemble average of quantities such as the ionization coefficient. The efficiency of the device is calculated as a function of both the work function and the top conducting channel thickness. The potential performance of GaAs devices is explored via the Monte Carlo simulation, and calculated results for the Si device are compared to published experimental data. DA - 1989/2// PY - 1989/2// DO - 10.1063/1.342988 VL - 65 IS - 3 SP - 1384-1386 J2 - Journal of Applied Physics LA - en OP - SN - 0021-8979 1089-7550 UR - http://dx.doi.org/10.1063/1.342988 DB - Crossref ER - TY - JOUR TI - Microprocessor testability AU - Nagle, H.T. AU - Fritzemeier, R.R. AU - Van Well, J.E. AU - McNamer, M.G. T2 - IEEE Transactions on Industrial Electronics AB - As the level of microprocessor complexity increases to several hundred thousand transistors for a single-chip machine, it is becoming very difficult to test commercially available designs to the level of fault coverage desired by some customers. In order to achieve near 100-percent coverage of single stuck-at faults, future microprocessors must be designed with special testing features (designed for testability). The authors describe the testing problem for microprocessors, including the various methods of generating test sets and their application by the user. A survey of the testability features of some of today's commercially available microprocessors is presented. Suggestions for testability features for future-generation microprocessors are also discussed.< > DA - 1989/5// PY - 1989/5// DO - 10.1109/41.19064 VL - 36 IS - 2 SP - 151-163 J2 - IEEE Trans. Ind. Electron. OP - SN - 0278-0046 1557-9948 UR - http://dx.doi.org/10.1109/41.19064 DB - Crossref ER - TY - JOUR TI - Statistical fault sampling AU - McNamer, M.G. AU - Roy, S.C. AU - Nagle, H.T. T2 - IEEE Transactions on Industrial Electronics AB - Computational requirements often discourage, or even prohibit, complete fault simulation of circuit designs having greater than 20000 single stuck-at faults. To circumvent this problem, statistical sampling methods have been proposed that provide fault coverage values within a small, predictable error range by simulating only a fraction of the circuit's total faults and using the result fault coverage value as an estimate of the fault coverage for the total circuit. As an introduction to the application of sampling methods to fault simulation of integrated circuits, the statistical theory behind these sampling methods and proposed augmentations of these methods for improving the precision of the sample fault coverage are presented. Various proposed sampling schemes are applied to example circuit designs, and the results are analyzed.< > DA - 1989/5// PY - 1989/5// DO - 10.1109/41.19063 VL - 36 IS - 2 SP - 141-150 J2 - IEEE Trans. Ind. Electron. OP - SN - 0278-0046 UR - http://dx.doi.org/10.1109/41.19063 DB - Crossref ER - TY - JOUR TI - Design for testability and built-in self test: a review AU - Nagle, H.T. AU - Roy, S.C. AU - Hawkins, C.F. AU - McNamer, M.G. AU - Fritzemeier, R.R. T2 - IEEE Transactions on Industrial Electronics AB - A summary is presented of a number of design-for-testability (DFT) and built-in self-test (BIST) schemes that can be used in modern VLSI circuits. The DFT methods presented are used to increase the controllability and observability of the circuit design. Partitioning, bus architectures, test-point insertion, and scan methods are discussed. On-chip hardware for real-time test-pattern generation and data compression are investigated. Several of the DFT methods are then combined to form BIST hardware configurations. Built-in evaluation and self-test (BEST), autonomous test, scan with random inputs, built-in logic block observer (BILBO), partitioning with BEST, test-point insertion with on-chip control, and combined test-pattern generation and data compression (CTGC) are considered. An overview of each BIST scheme is offered.< > DA - 1989/5// PY - 1989/5// DO - 10.1109/41.19062 VL - 36 IS - 2 SP - 129-140 J2 - IEEE Trans. Ind. Electron. OP - SN - 0278-0046 1557-9948 UR - http://dx.doi.org/10.1109/41.19062 DB - Crossref ER - TY - JOUR TI - Fundamentals of testability-a tutorial AU - Fritzemeier, R.R. AU - Nagle, H.T. AU - Hawkins, C.F. T2 - IEEE Transactions on Industrial Electronics AB - A review is presented of electrical testing, failure mechanisms, fault models, fault simulation, testability analysis, and test-generation methods for CMOS VLSI circuits. The relationships between the most commonly used fault models are explored. Various fault simulation methods are contrasted. The basic mechanisms used in test-vector generation are illustrated by examples. The importance of testability analysis as a guide to design and test generation is discussed. Algorithms for automatic test-pattern generation are summarized.< > DA - 1989/5// PY - 1989/5// DO - 10.1109/41.19061 VL - 36 IS - 2 SP - 117-128 J2 - IEEE Trans. Ind. Electron. OP - SN - 0278-0046 1557-9948 UR - http://dx.doi.org/10.1109/41.19061 DB - Crossref ER - TY - JOUR TI - The VLSI circuit test problem-a tutorial AU - Hawkins, C.F. AU - Nagle, H.T. AU - Fritzemeier, R.R. AU - Guth, J.R. T2 - IEEE Transactions on Industrial Electronics AB - Defect-free integrated circuits (IC) cannot be guaranteed by VLSI circuit manufacturers. Circuit complexity, IC defect anomalies, and economic considerations prevent complete validation of VLSI circuits. These VLSI test problems are especially acute in high-reliability designs and will only worsen as IC circuit size increases. Designers of IC, board, and system projects must be aware of the difficult engineering challenges that are involved in verifying high-quality ICs. The authors discuss these topics and emphasize the need for basic design for testability methods that must be used to alleviate these problems.< > DA - 1989/5// PY - 1989/5// DO - 10.1109/41.19060 VL - 36 IS - 2 SP - 111-116 J2 - IEEE Trans. Ind. Electron. OP - SN - 0278-0046 1557-9948 UR - http://dx.doi.org/10.1109/41.19060 DB - Crossref ER - TY - JOUR TI - Thin‐film permanent magnet requirements for magnetic devices in MMIC AU - Stancil, D.D. T2 - Microwave and Optical Technology Letters AB - Abstract The use of sputtered thin‐film permanent magnets for biasing microwave devices in planar geometries compatible with monolithic integration is considered. Possible geometries are presented for biasing a reciprocal microstrip phaser at 7 GHz, a stripline circulator at 15 GHz, and a magnetostatic wave delay line at 3 GHz. Yttrium iron garnet (YIG) is assumed to be the ferrite used in each of these devices. It is concluded that the in‐plane magnetization orientation is more useful than normal magnetization, and thick films (100‐150 μm) are needed with high magnetization ( > 16 kG) and moderate coercivity ( > 2 kOe). Below‐resonance devices are preferable because of their modest field requirements and tolerance to bias field inhomogeneities. DA - 1989/// PY - 1989/// DO - 10.1002/mop.4650020302 VL - 2 IS - 3 SP - 81-85 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024629171&partnerID=MN8TOARS ER - TY - JOUR TI - Theory of Magnetostatic Waves in Moving Ferrite Films and Applications to Rotation Rate Sensing AU - Stancil, D.D. T2 - IEEE Transactions on Microwave Theory and Techniques AB - A first-order field theory for electromagnetic waves in moving ferrites and ferrite thin films is presented. The dominant effect of the motion is found to be the Doppler-shifted frequency observed in the moving frame. This gives rise to an anomalously large shift in wavenumber, due to the dispersive nature of the ferrite medium. Because of the large effect, it is suggested that a moving-medium experiment using magnetostatic waves could be used to distinguish between various competing forms for the dispersion term in the Fresnel-Fizeau coefficient. The results of the field theory are discussed with relation to relative and absolute rotation rate sensing. The author describes how magnetostatic waves could be used to measure relative rotation rates if confined to propagate around the perimeter of a rotating disk. Since the phase shift would be established in the time required to propagate around the disk, the response time could be significantly shorter than conventional tachometers. An experiment with counterpropagating magnetostatic waves is suggested to clarify the effect of a magnetic medium on the magnitude of the Sagnac effect.< > DA - 1989/// PY - 1989/// DO - 10.1109/22.17451 VL - 37 IS - 5 SP - 851-859 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024663243&partnerID=MN8TOARS ER - TY - CONF TI - Effective interaction lengths in the collinear magnetostatic wave - Optical interaction AU - Bilaniuk, N. AU - Stancil, D.D. AB - The collinear magnetostatic wave - optical wave interaction is considered. Emphasis is placed on the effect of magnetostatic and optical losses on the conversion efficiency between optical modes and on the interaction bandwidth. It is found that the introduction of an "effective interaction length" provides a straightforward refinement of existing theory applicable to situations with small total energy transfer between optical modes. A weak-coupling model for the interaction bandwidth in the presence of loss is also described. The utility of the model is tested by comparing experimentally obtained interaction bandwidths against theoretical predictions, at center frequencies between 0.5 and 12 GHz. Taking optical and magnetostatic wave losses into account in the theory results in a significant improvement over lossless coupled-mode theory. Some experimental techniques and applications with magnetostatic waves are illustrated. C2 - 1989/// C3 - Proceedings of SPIE - The International Society for Optical Engineering DA - 1989/// DO - 10.1117/12.963356 VL - 1177 SP - 365-372 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-33747934171&partnerID=MN8TOARS ER - TY - JOUR TI - Device possibilities for the MSW-optical collinear interaction AU - Talisa, S.H. AU - Stancil, D.D. T2 - IEEE Transactions on Magnetics AB - Experimental and theoretical results are given which show that desirable requirements for devices can be met by the magnetostatic-wave (MSW)-light collinear interaction. It has been shown experimentally that the interaction can produce narrowband, tunable passbands potentially useful for device functions in microwave filtering and light-wave frequency shifting. Theoretical calculations show a more narrow passband than that observed. To enhance coupling efficiency, the authors propose a multilayered structure with separate optical and microwave guiding layers. Example calculations for this structure show that 100% conversion lengths on the order of 1 cm at both 1.152 mu m and 1.32 mu m should be possible in low-loss films. These structures could be fabricated with present technology.< > DA - 1989/// PY - 1989/// DO - 10.1109/20.42346 VL - 25 IS - 5 SP - 3494-3496 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0024732944&partnerID=MN8TOARS ER - TY - CONF TI - Observations of forest decline in the boreal montane ecosystems of Mt. Mitchell, N.C. AU - Bruck, R. I. AU - Bradow, R. AU - Brockhaus, J. AU - Cure, B. AU - Khorram, S. AU - McDaniel, A. AU - Modena, S. AU - Robarge, W. AU - Smithson, P. C2 - 1989/// C3 - Proceedings of the U.S.-F.R.G. Symposium on Forest Decline, Burlington, VT, Oct. 19-24, 1987 (USDA Forest Service Technical publication #120) DA - 1989/// SP - 97-107 PB - USDA Forest Service ER - TY - JOUR TI - The effect of field plot location errors within TM data on forest decline model development AU - Campbell, M. V. AU - Brockhaus, J. A. AU - Bruck, R. I. AU - Khorram, S. T2 - Proceedings of the American Society of Photogrammetry and Remote Sensing DA - 1989/// PY - 1989/// VL - 41 SP - 430-437 ER - TY - JOUR TI - Multi-temporal modeling of forest decline from Landsat TM digital data AU - Khorram, S. AU - Brockhaus, J. A. AU - Bruck, R. I. AU - Campbell, M. V. T2 - Proceedings of the International Society of Remote Sensing DA - 1989/// PY - 1989/// VL - 37 SP - 771-779 ER - TY - JOUR TI - Analysis of forest decline in the Southern Appalachian Mountains. AU - Brockhaus, J. A. AU - Campbell, M. V. AU - Bruck, R. I. AU - Khorram, S. T2 - Proceedings of the American Society of Photogrammetry and Remote Sensing DA - 1989/// PY - 1989/// VL - 41 SP - 419-429 ER - TY - PAT TI - Inductive coupled power system AU - Kelley, A. W. AU - Owens, W. R. C2 - 1989/// DA - 1989/// PY - 1989/// ER -