Electrical and Computer Engineering

Differentiation Between Electric Breakdowns and Dielectric Breakdown in Thin Silicon Oxides

Journal of The Electrochemical Society, 145(3), 1033.

Tuned amplifiers fabricated in a 0.1-um CMOS technology on bulk, SOI, and SOS substrates

Government Microcircuit Applications Conference Digital Papers, 175–178.

M-STAR: A Device for Continuously Monitoring the Physiological and Biological Properties of Tumors

In Connectivity EXPO’98 Abstract Book (p. 45). Wake Forest University.

Applications of Electronic Nose in Clinical Analysis

Proceedings of The Pittsburgh Conference on Analytical Chemistry and Applied Spectroscopy. Presented at the Pittcon’98.

IEEE Electronic Services Workshop Web Proceedings

4- and 13-GHz tuned amplifiers implemented in a 0.1-μm CMOS technology on SOI, SOS, and bulk substrates

IEEE Journal of Solid-State Circuits, 33(12), 2066–2073.

The Search for Cathode and Anode Traps in High-Voltage Stressed Silicon Oxides

Journal of The Electrochemical Society, 145(4), 1292.

Evaluation of Communication Mechanisms in Invalidate-based Shared Memory Multiprocessors

Parallel Computer Routing and Communication, Vol. 1417, pp. 159–170.

Ferroelectrics as a versatile solid state platform for integrated optics

Integrated Ferroelectrics, 22(1-4), 465–471.

Auto-oscillation thresholds at the main resonance in ferrimagnetic films

Physical Review B - Condensed Matter and Materials Physics, 57(18), 11483–11491. http://www.scopus.com/inward/record.url?eid=2-s2.0-0542369957&partnerID=MN8TOARS

A fast algorithm for detecting die extrusion defects in IC packages

MACHINE VISION AND APPLICATIONS, 11(1), 37–41.

Field controlled current modulators based on tunable barrier strengths

Washington, DC: U.S. Patent and Trademark Office.

Semiconductor device

Washington, DC: U.S. Patent and Trademark Office.

Visual communications and image processing '98: 28-30 January 1998, San Jose, California

Bellingham, Wash., USA: SPIE.

Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(5), 1155–1161.

Editor's preface

IEEE Transactions on Microwave Theory and Techniques, 46(3), 205.

Call admission control schemes and ATM network topological design

EUROPEAN JOURNAL OF OPERATIONAL RESEARCH, 111(2), 393–404.

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131–2137.

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

Evaluation and comparison of 3.0 nm gate-stack dielectrics for tenth-micron technology NMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 157–162. Warrendale, Pennsylvania: Materials Research Society.