Electrical and Computer Engineering

Optical properties of wide bandgap II-V nitride semiconductors

In M. Zhang & K. N. Tu (Eds.), 1998 5th International Conference on Solid-State and Integrated Circuit Technology: Proceedings, October 21-23, 1998, Beijing, China (pp. 609–612).

Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 231–234. Bristol; Philadelphia: Institute of Physics Pub.

Microstructure and IR range optical properties of pure DLC and DLC containing dopants prepared by pulsed laser deposition

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 331. Warrendale, Pa.: Materials Research Society.

Growth of high quality single crystal ZnO films on sapphire by pulsed laser ablation

Advances in laser ablation of materials: Symposium held April 13-16, 1998, San Francisco, California, U.S.A. (Materials Research Society symposia proceedings ; v. 526)., 305. Warrendale, Pa.: Materials Research Society.

Germanium nanostructures fabricated by pulsed laser deposition

Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Optical metastability in InGaN/GaN heterostructures

Compound semiconductors 1997: Proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997, 375–378. Bristol; Philadelphia: Institute of Physics Pub.

Unified assign and schedule: A new approach to scheduling for clustered register file microarchitectures

Proceedings, 31st annual ACM/IEEE International Symposium on Microarchitecture: November 30-December 2, 1998, Dallas, Texas / co-sponsored by ACM SIGMICRO, IEEE Computer Society Technical Committee on Microprogramming and Microarchitecture., 308–315. Los Alamitos, Calif.: IEEE Computer Society Press.

A comparison of how different orientation behaviors influence dinoflagellate trajectories and photoresponses in turbulent water columns

In A. D. C. D. M. Anderson & G. M. Hallegraeff (Eds.), Physiological ecology of harmful algal blooms (NATO ASI series. Series G, Ecological sciences ; no. 41) (pp. 581–599). Berlin ; New York: Springer.

Silicon epitaxy on Si(100) with adsorbed oxygen

Electrochemical and Solid State Letters, 1(2), 80–82.

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

A guide to TCP/IP on Microsoft Windows NT 4.0

Cambridge, MA: Course Technology.

MPS: Miss-path scheduling for multiple-issue processors

IEEE TRANSACTIONS ON COMPUTERS, 47(12), 1382–1397.

Congestion control in the wormhole-routed torus with clustering and delayed deflection

Parallel computer routing and communication: Second international workshop, PCRCW 1997, Atlanta, Georgia, USA, June 26-27, 1997. Proceedings. Ed. by Sudhakar Yalamanchili and Jose Duato, 1417, 33–38. New York: Springer.

A novel method for reducing the dimensionality in a sensor array

IEEE Transactions on Instrumentation and Measurement, 47(3), 728–741.

Visual emotive communication in lifelike pedagogical agents

In Intelligent tutoring systems: 4th International Conference, ITS '98, San Antonio, Texas, USA, August 16-19, 1998: Proceedings (pp. 474–483).

Renormalization of acoustic phonon spectra and rudiments of the Peierls transition in free-standing quantum wires

Physical Review B, 58(24), 16360–16368.

Quantum-based electronic devices and systems

Singapore; River Edge, NJ: World Scientific.

Probability and random processes for electrical engineers

Boston, MA: WCB/McGraw-Hill.

Partition, Pakistan, and south Asian history: In search of a narrative

Gilmartin, D. (1998, November). JOURNAL OF ASIAN STUDIES, Vol. 57, pp. 1068–1095.

Cryogenic operation of silicon power devices