Electrical & Computer Engineering

Optoelectronic and microelectronic devices including cubic ZnMgO and/or CdMgO alloys

Washington, DC: U.S. Patent and Trademark Office.

Size effect in germanium nanostructures fabricated by pulsed laser deposition

In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix

In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280.

A data mining and CIDF based approach for detecting novel and distributed intrusions

In Recent advances in intrusion detection: Third international workshop, RAID 2000, Toulouse, France, October 2-4, 2000: Proceedings (Vol. 1907, pp. 49–65). Berlin; New York: Springer.

Suppression of Dyakonov-Perel spin relaxation in 2D channels of finite width

Kiselev, A. A., & Kim, K. W. (2000, September). PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 221, pp. 491–494.

Renewal-process approximation of a stochastic threshold model for electrical neural stimulation

JOURNAL OF COMPUTATIONAL NEUROSCIENCE, 9(2), 119–132.

Nonlinear cain compression in microwave amplifiers using generalized power-series analysis and transformation of input statistics

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 48(10), 1774–1777.

Neural-network-based motor rolling bearing fault diagnosis

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 47(5), 1060–1069.

Effect of Ar+ ion beam in the process of plasma surface modification of PET films

JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683.

Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides

ELECTRONICS LETTERS, 36(20), 1699–1700.

A neuro-stimulus chip with telemetry unit for retinal prosthetic device

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 35(10), 1487–1497.

A mixed FDTD-integral equation approach for on-site safety assessment in complex electromagnetic environments

IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 48(12), 1830–1836.

A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(8), 1636–1644.

Use of PML absorbing layers for the truncation of the head model in cellular telephone simulations

IEEE Transactions on Microwave Theory and Techniques, 48(11 pt.2), 2033–2039.

NMR quantum computation with indirectly coupled gates

Physical Review A, 62(2).

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

APPLIED PHYSICS LETTERS, 77(1), 97–99.

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354.

Thermal conductivity of Si/Ge superlattices: A realistic model with a diatomic unit cell

Physical Review B, 62(11), 6896–6899.