Electrical & Computer Engineering

Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

Applied Physics Letters, 79(23), 3803–3805.

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

Materials Letters, 51(6), 500–503.

The future of power semiconductor device technology

Proceedings of the IEEE, 89(6), 822–832.

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Applied Physics Letters, 79(3), 281–283.

Fiber length measurement by image processing

Textile Research Journal, 71(10), 905–910.

Smart sensors to monitor warp tension and breaks on a loom

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Journal of Electronic Materials, 30(4), 439–444.

Quantized vibrational modes of nanospheres and nanotubes in the elastic continuum model

Journal of Applied Physics, 89(9), 5107–5111.

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model

IEEE Transactions on Microwave Theory and Techniques, 49(12), 2315–2321.

High-field electron transport in nanoscale group-III nitride devices

Physica Status Solidi. B, Basic Solid State Physics, 228(2), 593–597.

Group-III nitrides hot electron effects in moderate electric fields

Physica Status Solidi. B, Basic Solid State Physics, 228(2), 571–574.

Generation of coherent confined LO phonons under the drift of two-dimensional electrons

Physical Review B, 63(16), 5308.

Flow structures and particle deposition patterns in double-bifurcation airway models. Part 1. Air flow fields

Journal of Fluid Mechanics, 435(2001 May 25), 25–54.

Alkaline depolymerization of poly(trimethylene terephthalate)

Journal of Applied Polymer Science, 82(1), 99–107.

Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers

Applied Physics Letters, 78(12), 1688–1690.

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Journal of Electronic Materials, 30(12), 1499–1505.

Electrical properties of Ru and RuO2 gate electrodes for Si- PMOSFET with ZrO2 and Zr-silicate dielectrics

Journal of Electronic Materials, 30(12), 1493–1498.

Double differential space-time block coding for time-selective fading channels

IEEE Transactions on Communications, 49(9), 1529–1539.

Colorimetric restoration of digital images

IEEE Transactions on Image Processing, 10(3), 393–402.

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si

Journal of the Electrochemical Society, 148(2), G43–49.