Electrical and Computer Engineering

College of Engineering

Works Published in 2010

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Displaying works 61 - 80 of 331 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2010 journal article

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

By: N. Son*, C. Hemmingsson*, N. Morishita*, T. Ohshima*, T. Paskova*, K. Evans*, A. Usui*, J. Isoya*, B. Monemar*, E. Janzén*

Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

By: F. Kadlec, C. Kadlec, T. Paskova & K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis ...

author keywords: ballistic transport; electroluminescence; gallium compounds; hot carriers; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

By: J. Leach*, C. Zhu*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç* ...

author keywords: aluminium compounds; electron density; electron gas; field effect transistors; gallium compounds; indium compounds
Source: Crossref
Added: August 28, 2020

2010 journal article

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

By: J. Leach*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç*, T. Paskova* ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

By: T. Detchprohm*, M. Zhu*, Y. Li*, L. Zhao*, S. You*, C. Wetzel*, E. Preble*, T. Paskova*, D. Hanser*

author keywords: current density; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020

2010 journal article

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

By: D. Storm*, D. Katzer*, D. Deen*, R. Bass*, D. Meyer*, J. Roussos*, S. Binari*, T. Paskova*, E. Preble*, K. Evans*

author keywords: Gallium nitride; High electron mobility transistor; Molecular beam epitaxy; Homoepitaxy; Doping
Source: Crossref
Added: August 28, 2020

2010 journal article

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

author keywords: Etching; Defects; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

By: P. Gladkov, J. Humlíček, E. Hulicius, T. Šimeček, T. Paskova* & K. Evans

author keywords: Fe-doping; Optical characterization; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020

2010 journal article

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

By: H. Xu*, S. Alur*, Y. Wang*, A. Cheng*, K. Kang*, Y. Sharma*, M. Park*, C. Ahyi* ...

author keywords: GaN; Schottky rectifier; Raman spectroscopy
Source: Crossref
Added: August 28, 2020

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko n, C. Reynolds n, D. Barlage n, M. Johnson n, S. Lappi n, C. Ebert*, E. Preble*, T. Paskova*, K. Evans*

author keywords: GaN; vicinal surfaces
Source: Crossref
Added: August 28, 2020

2010 journal article

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis ...

author keywords: nitride semiconductors; InGaN; LEDs; efficiency; hot electrons
Source: Crossref
Added: August 28, 2020

2010 journal article

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

By: T. Detchprohm*, M. Zhu*, S. You*, Y. Li*, L. Zhao*, E. Preble*, T. Paskova*, D. Hanser*, C. Wetzel*

author keywords: GaInN/GaN; quantum wells; MOVPE; defects; electroluminescence; LEDs
Source: Crossref
Added: August 28, 2020

2010 journal article

Mg-related acceptors in GaN

Physica Status Solidi (c), 7(7-8), 1850–1852.

By: B. Monemar*, P. Paskov*, G. Pozina*, C. Hemmingsson*, J. Bergman*, H. Amano*, I. Akasaki*, S. Figge* ...

author keywords: GaN; MOVPE; doping; impurity levels; photoluminescence
Source: Crossref
Added: August 28, 2020

2010 journal article

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physica Status Solidi (a), 207(6), 1305–1308.

author keywords: dislocations; electroluminescence; GaInN/GaN; LEDs; MOVPE
Source: Crossref
Added: August 28, 2020

2010 chapter

Green Secure Processors: Towards Power-Efficient Secure Processor Design

In Transactions on Computational Science X (pp. 329–351).

By: S. Chhabra n & Y. Solihin n

Source: Crossref
Added: August 28, 2020

2010 chapter

An Analysis of Secure Processor Architectures

In Transactions on Computational Science VII (pp. 101–121).

By: S. Chhabra n, Y. Solihin n, R. Lal* & M. Hoekstra*

Source: Crossref
Added: August 28, 2020

2010 journal article

Spectra and energy levels of Eu3+ in cubic phase Gd2O3

Physica Status Solidi (b), 247(7), 1807–1813.

By: E. Smith*, J. Gruber*, P. Wellenius n, J. Muth n & H. Everitt*

author keywords: crystal field calculations; photoluminescence; rare earth doped semiconductors
Source: Crossref
Added: August 28, 2020

2010 chapter

How the Public Views Strategies Designed to Reduce the Threat of Botnets

In Trust and Trustworthy Computing (pp. 337–351).

By: B. Rowe*, D. Wood* & D. Reeves n

Source: Crossref
Added: August 28, 2020

2010 conference paper

Validation of battery energy storage control for wind farm dispatching

IEEE PES General Meeting, PES 2010.

By: S. Teleke*, M. Baran n, S. Bhattacharya n & A. Huang n

Source: ORCID
Added: August 9, 2020