Electrical and Computer Engineering

Works Published in 2010

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Displaying works 61 - 80 of 333 in total

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2010 journal article

Effects of nanoscale porosity on thermoelectric properties of SiGe

Journal of Applied Physics, 107(9), 094308.

By: H. Lee*, D. Vashaee*, D. Wang*, M. Dresselhaus*, Z. Ren* & G. Chen*

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2010 chapter

Local Occlusion Detection under Deformations Using Topological Invariants

In Computer Vision – ECCV 2010 (pp. 101–114).

co-author countries: United States of America 🇺🇸
Sources: Crossref, ORCID
Added: August 28, 2020

2010 journal article

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

By: N. Son*, C. Hemmingsson*, N. Morishita*, T. Ohshima*, T. Paskova*, K. Evans*, A. Usui*, J. Isoya*, B. Monemar, E. Janzén*

co-author countries: Japan 🇯🇵 Sweden 🇸🇪 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

By: F. Kadlec, C. Kadlec, T. Paskova & K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis* ...

co-author countries: Lithuania 🇱🇹 United States of America 🇺🇸
author keywords: ballistic transport; electroluminescence; gallium compounds; hot carriers; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

By: J. Leach*, C. Zhu*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç* ...

co-author countries: United States of America 🇺🇸
author keywords: aluminium compounds; electron density; electron gas; field effect transistors; gallium compounds; indium compounds
Source: Crossref
Added: August 28, 2020

2010 journal article

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

By: J. Leach*, M. Wu*, X. Ni*, X. Li*, J. Xie*, Ü. Özgür*, H. Morkoç*, T. Paskova* ...

co-author countries: China 🇨🇳 United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2010 journal article

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

By: T. Detchprohm*, M. Zhu*, Y. Li*, L. Zhao*, S. You*, C. Wetzel*, E. Preble*, T. Paskova*, D. Hanser*

co-author countries: United States of America 🇺🇸
author keywords: current density; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020

2010 journal article

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

By: D. Storm*, D. Katzer*, D. Deen*, R. Bass*, D. Meyer*, J. Roussos*, S. Binari*, T. Paskova*, E. Preble*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: Gallium nitride; High electron mobility transistor; Molecular beam epitaxy; Homoepitaxy; Doping
Source: Crossref
Added: August 28, 2020

2010 journal article

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

By: J. Weyher*, B. łucznik*, I. Grzegory*, J. Smalc-Koziorowska & T. Paskova*

co-author countries: Poland 🇵🇱 United States of America 🇺🇸
author keywords: Etching; Defects; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

By: P. Gladkov, J. Humlíček, E. Hulicius, T. Šimeček, T. Paskova* & K. Evans

author keywords: Fe-doping; Optical characterization; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020

2010 journal article

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

By: H. Xu*, S. Alur*, Y. Wang*, A. Cheng*, K. Kang*, Y. Sharma*, M. Park*, C. Ahyi* ...

co-author countries: United States of America 🇺🇸
author keywords: GaN; Schottky rectifier; Raman spectroscopy
Source: Crossref
Added: August 28, 2020

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko n, C. Reynolds n, D. Barlage n, M. Johnson n, S. Lappi n, C. Ebert*, E. Preble*, T. Paskova*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: GaN; vicinal surfaces
Source: Crossref
Added: August 28, 2020

2010 journal article

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

By: X. Ni*, X. Li*, J. Lee*, S. Liu*, V. Avrutin*, Ü. Özgür*, H. Morkoç*, A. Matulionis ...

co-author countries: United States of America 🇺🇸
author keywords: nitride semiconductors; InGaN; LEDs; efficiency; hot electrons
Source: Crossref
Added: August 28, 2020

2010 journal article

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

By: T. Detchprohm*, M. Zhu*, S. You*, Y. Li*, L. Zhao*, E. Preble*, T. Paskova*, D. Hanser*, C. Wetzel*

co-author countries: United States of America 🇺🇸
author keywords: GaInN/GaN; quantum wells; MOVPE; defects; electroluminescence; LEDs
Source: Crossref
Added: August 28, 2020

2010 journal article

Mg-related acceptors in GaN

Physica Status Solidi (c), 7(7-8), 1850–1852.

By: B. Monemar, P. Paskov*, G. Pozina*, C. Hemmingsson*, J. Bergman*, H. Amano*, I. Akasaki*, S. Figge* ...

co-author countries: Germany 🇩🇪 Japan 🇯🇵 Sweden 🇸🇪 United States of America 🇺🇸
author keywords: GaN; MOVPE; doping; impurity levels; photoluminescence
Source: Crossref
Added: August 28, 2020

2010 journal article

Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes

Physica Status Solidi (a), 207(6), 1305–1308.

co-author countries: United States of America 🇺🇸
author keywords: dislocations; electroluminescence; GaInN/GaN; LEDs; MOVPE
Source: Crossref
Added: August 28, 2020

2010 chapter

Green Secure Processors: Towards Power-Efficient Secure Processor Design

In Transactions on Computational Science X (pp. 329–351).

By: S. Chhabra n & Y. Solihin n

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2010 chapter

An Analysis of Secure Processor Architectures

In Transactions on Computational Science VII (pp. 101–121).

By: S. Chhabra n, Y. Solihin n, R. Lal* & M. Hoekstra*

co-author countries: United States of America 🇺🇸
Source: Crossref
Added: August 28, 2020

2010 journal article

Spectra and energy levels of Eu3+ in cubic phase Gd2O3

Physica Status Solidi (b), 247(7), 1807–1813.

By: E. Smith*, J. Gruber*, P. Wellenius n, J. Muth n & H. Everitt*

co-author countries: United States of America 🇺🇸
author keywords: crystal field calculations; photoluminescence; rare earth doped semiconductors
Source: Crossref
Added: August 28, 2020

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