Works Published in 2010
Displaying works 61 - 80 of 333 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2010 journal article
Effects of nanoscale porosity on thermoelectric properties of SiGe
Journal of Applied Physics, 107(9), 094308.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 chapter
Local Occlusion Detection under Deformations Using Topological Invariants
In Computer Vision – ECCV 2010 (pp. 101–114).
TL;DR:
The novelty and strength of this methodology is that it does not rely on spatio-temporal derivatives or matching, but is instead based on a mathematical representation of the underlying cause of occlusions in a deforming 3D scene.
(via Semantic Scholar)
citeseerx.ist.psu.edu (repository)
Sources: Crossref, ORCID, NC State University Libraries
Added: August 28, 2020
2010 journal article
Radiation-induced defects in GaN
Physica Scripta, T141, 014015.
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of Fe doping on the terahertz conductivity of GaN single crystals
Journal of Physics D: Applied Physics, 43(14), 145401.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
Applied Physics Letters, 97(3), 031110.
author keywords: ballistic transport; electroluminescence; gallium compounds; hot carriers; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
Applied Physics Letters, 96(13), 133505.
author keywords: aluminium compounds; electron density; electron gas; field effect transistors; gallium compounds; indium compounds
Source: Crossref
Added: August 28, 2020
2010 journal article
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
Applied Physics Letters, 96(10), 102109.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
Applied Physics Letters, 96(5), 051101.
author keywords: current density; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Solid-State Electronics, 54(11), 1470–1473.
author keywords: Gallium nitride; High electron mobility transistor; Molecular beam epitaxy; Homoepitaxy; Doping
Source: Crossref
Added: August 28, 2020
2010 journal article
Revealing extended defects in HVPE-grown GaN
Journal of Crystal Growth, 312(18), 2611–2615.
author keywords: Etching; Defects; Hydride vapor phase epitaxy; Nitrides
UN Sustainable Development Goal Categories
15. Life on Land
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
Journal of Crystal Growth, 312(8), 1205–1209.
author keywords: Fe-doping; Optical characterization; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020
2010 journal article
In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation
Journal of Electronic Materials, 39(10), 2237–2242.
author keywords: GaN; Schottky rectifier; Raman spectroscopy
Source: Crossref
Added: August 28, 2020
2010 journal article
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
Journal of Electronic Materials, 39(5), 504–516.
author keywords: GaN; vicinal surfaces
Source: Crossref
Added: August 28, 2020
2010 journal article
The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.
author keywords: nitride semiconductors; InGaN; LEDs; efficiency; hot electrons
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate
Physica Status Solidi (c), 7(7-8), 2190–2192.
author keywords: GaInN/GaN; quantum wells; MOVPE; defects; electroluminescence; LEDs
Source: Crossref
Added: August 28, 2020
2010 journal article
Mg-related acceptors in GaN
Physica Status Solidi (c), 7(7-8), 1850–1852.
author keywords: GaN; MOVPE; doping; impurity levels; photoluminescence
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Crossref
Added: August 28, 2020
2010 journal article
Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes
Physica Status Solidi (a), 207(6), 1305–1308.
author keywords: dislocations; electroluminescence; GaInN/GaN; LEDs; MOVPE
Source: Crossref
Added: August 28, 2020
2010 chapter
Green Secure Processors: Towards Power-Efficient Secure Processor Design
In Transactions on Computational Science X (pp. 329–351).
TL;DR:
This is the first work to examine the power implications of providing hardware mechanisms for security in secure processor architectures and outlines the design of a novel hybrid cryptographic engine that can be used to minimize the power consumption for a secure processor.
(via Semantic Scholar)
Source: Crossref
Added: August 28, 2020
2010 chapter
An Analysis of Secure Processor Architectures
In Transactions on Computational Science VII (pp. 101–121).
TL;DR:
Three of the currently proposed secure uniprocessor designs are analyzed in terms of their security, complexity of hardware required and performance overheads: eXecute Only Memory (XOM), Counter mode encryption and Merkle tree based authentication, and Address Independent Seed Encryption and Bonsai MerKle Tree based authentication.
(via Semantic Scholar)
Source: Crossref
Added: August 28, 2020
2010 journal article
Spectra and energy levels of Eu3+ in cubic phase Gd2O3
Physica Status Solidi (b), 247(7), 1807–1813.
author keywords: crystal field calculations; photoluminescence; rare earth doped semiconductors
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Crossref
Added: August 28, 2020
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