Electrical and Computer Engineering
College of Engineering
Works Published in 2010
Displaying works 61 - 80 of 331 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
2010 journal article
Radiation-induced defects in GaN
Physica Scripta, T141, 014015.
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of Fe doping on the terahertz conductivity of GaN single crystals
Journal of Physics D: Applied Physics, 43(14), 145401.
hal.archives-ouvertes.fr (repository)
Source: Crossref
Added: August 28, 2020
2010 journal article
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
Applied Physics Letters, 97(3), 031110.
author keywords: ballistic transport; electroluminescence; gallium compounds; hot carriers; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
Applied Physics Letters, 96(13), 133505.
author keywords: aluminium compounds; electron density; electron gas; field effect transistors; gallium compounds; indium compounds
Source: Crossref
Added: August 28, 2020
2010 journal article
Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates
Applied Physics Letters, 96(10), 102109.
Source: Crossref
Added: August 28, 2020
2010 journal article
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
Applied Physics Letters, 96(5), 051101.
author keywords: current density; dislocations; electroluminescence; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
Source: Crossref
Added: August 28, 2020
2010 journal article
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Solid-State Electronics, 54(11), 1470–1473.
author keywords: Gallium nitride; High electron mobility transistor; Molecular beam epitaxy; Homoepitaxy; Doping
Source: Crossref
Added: August 28, 2020
2010 journal article
Revealing extended defects in HVPE-grown GaN
Journal of Crystal Growth, 312(18), 2611–2615.
author keywords: Etching; Defects; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020
2010 journal article
Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
Journal of Crystal Growth, 312(8), 1205–1209.
author keywords: Fe-doping; Optical characterization; Hydride vapor phase epitaxy; Nitrides
Source: Crossref
Added: August 28, 2020
2010 journal article
In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation
Journal of Electronic Materials, 39(10), 2237–2242.
author keywords: GaN; Schottky rectifier; Raman spectroscopy
Source: Crossref
Added: August 28, 2020
2010 journal article
Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates
Journal of Electronic Materials, 39(5), 504–516.
author keywords: GaN; vicinal surfaces
Source: Crossref
Added: August 28, 2020
2010 journal article
The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes
Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.
author keywords: nitride semiconductors; InGaN; LEDs; efficiency; hot electrons
Source: Crossref
Added: August 28, 2020
2010 journal article
Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate
Physica Status Solidi (c), 7(7-8), 2190–2192.
author keywords: GaInN/GaN; quantum wells; MOVPE; defects; electroluminescence; LEDs
Source: Crossref
Added: August 28, 2020
2010 journal article
Mg-related acceptors in GaN
Physica Status Solidi (c), 7(7-8), 1850–1852.
author keywords: GaN; MOVPE; doping; impurity levels; photoluminescence
Source: Crossref
Added: August 28, 2020
2010 journal article
Various misfit dislocations in green and yellow GaInN/GaN light emitting diodes
Physica Status Solidi (a), 207(6), 1305–1308.
author keywords: dislocations; electroluminescence; GaInN/GaN; LEDs; MOVPE
Source: Crossref
Added: August 28, 2020
2010 chapter
Green Secure Processors: Towards Power-Efficient Secure Processor Design
In Transactions on Computational Science X (pp. 329–351).
Source: Crossref
Added: August 28, 2020
2010 chapter
An Analysis of Secure Processor Architectures
In Transactions on Computational Science VII (pp. 101–121).
Source: Crossref
Added: August 28, 2020
2010 journal article
Spectra and energy levels of Eu3+ in cubic phase Gd2O3
Physica Status Solidi (b), 247(7), 1807–1813.
author keywords: crystal field calculations; photoluminescence; rare earth doped semiconductors
Source: Crossref
Added: August 28, 2020
2010 chapter
How the Public Views Strategies Designed to Reduce the Threat of Botnets
In Trust and Trustworthy Computing (pp. 337–351).
Source: Crossref
Added: August 28, 2020
2010 conference paper
Validation of battery energy storage control for wind farm dispatching
IEEE PES General Meeting, PES 2010.
Source: ORCID
Added: August 9, 2020
