Electrical & Computer Engineering

Voltage regulator for contactor ridethrough

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 36, pp. 697–704.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

System-level power consumption modeling and tradeoff analysis techniques for superscalar processor design

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 8(2), 129–137.

System and method for powering, controlling, and communicating with multiple inductively-powered devices

Washington, DC: U.S. Patent and Trademark Office.

A waveguide-based aperture-coupled patch amplifier array - Full-wave system analysis and experimental validation

Yakovlev, A. B., Ortiz, S., Ozkar, M., Mortazawi, A., & Steer, M. B. (2000, December). IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. 48, pp. 2692–2699.

Surface residue island nucleation in anhydrous HF/alcohol vapor processing of Si surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(9), 3512–3518.

Slipstream processors: Improving both performance and fault tolerance

Sundaramoorthy, K., Purser, Z., & Rotenberg, E. (2000, November). ACM SIGPLAN NOTICES, Vol. 35, pp. 257–268.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341.

Scalable solid-state quantum computer based on quantum dot pillar structures

Physical Review B, 61(11), 7526–7535.

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE Transactions on Electron Devices, 47(3), 601–608.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

Energy-dependent electron scattering via interaction with optical phonons in wurtzite crystals and quantum wells

Physical Review B, 61(3), 2034–2040.

Cerenkov generation of high-frequency confined acoustic phonons in quantum wells

Applied Physics Letters, 76(14), 1869–1871.

Carbon-13 T-1 rho investigation in two polycarbodiimides

SOLID STATE COMMUNICATIONS, 115(1), 23–28.

A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2236–2237.

Refractive indices and absorption coefficients of MgxZn1-xO alloys

APPLIED PHYSICS LETTERS, 76(8), 979–981.

Properties of rescheduling size invariance for dynamic rescheduling-based VLIW cross-generation compatibility

IEEE TRANSACTIONS ON COMPUTERS, 49(8), 814–825.

Overview of semiconductor devices

In Y. Nishi & R. Doering (Eds.), Handbook of semiconductor manufacturing technology. New York: Marcel Dekker.

Equitable allocation of congestion relief cost to transactions

IEEE TRANSACTIONS ON POWER SYSTEMS, 15(2), 579–585.