Electrical and Computer Engineering

Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

APPLIED PHYSICS LETTERS, 77(6), 821–823.

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354.

Thermal conductivity of Si/Ge superlattices: A realistic model with a diatomic unit cell

Physical Review B, 62(11), 6896–6899.

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369.

QoS rewards and risks: A multi-market approach to resource allocation

In Networking 2000: Broadband communications, high performance networking, and performance of communication networks / IFIP-TC6/European Commission International Conference, Paris, France, May 2000, proceedings (Vol. 1815, pp. 945–956).

QR-RLS algorithm for error diffusion of color images

Optical Engineering (Redondo Beach, Calif.), 39(11), 2860–2866.

Parallel image processing with the block data parallel architecture (Reprinted from Proceedings of the IEEE, vol 84, pg 947-968, 1996)

Alexander, W. E., Reeves, D. S., & Gloster, C. S. (2000, September). IBM JOURNAL OF RESEARCH AND DEVELOPMENT, Vol. 44, pp. 681–702.

Integrated circuits having cooperative ring oscillator clock circuits therein to minimize clock skew

Washington, DC: U.S. Patent and Trademark Office.

Generation and amplification of sub-THz coherent acoustic phonons under the drift of two-dimensional electrons

Physical Review B, 62(11), 7459–7469.

Fair efficient call admission control policies for heterheneous traffic streams in a packet routing server using the DTM technology

In Networking 2000: Broadband communications, high performance networking, and performance of communication networks / IFIP-TC6/European Commission International Conference, Paris, France, May 2000, proceedings (Vol. 1815, pp. 620–631).

Ensemble Monte Carlo study of channel quantization in a 25-nm n-MOSFET

IEEE Transactions on Electron Devices, 47(10), 1864–1872.

Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 21(12), 593–595.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Coherent optical phonon generation by the electric current in quantum wells

Applied Physics Letters, 77(25), 4178–4180.

Buffer size requirements for delay sensitive traffic considering discrete effects and service-latency in ATM switches

In Networking 2000: Broadband communications, high performance networking, and performance of communication networks / IFIP-TC6/European Commission International Conference, Paris, France, May 2000, proceedings (Vol. 1815, pp. 61–73).

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400.

A new lumped-elements power-combining amplifier based on an extended resonance technique

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 48(9), 1505–1515.

A Ka band extended resonance power amplifier

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 10(11), 475–477.

Voltage regulator for contactor ridethrough

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 36, pp. 697–704.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.