Electrical & Computer Engineering

Equivalent circuit parameters of resonant tunneling diodes extracted from self-consistent Wigner-Poisson simulation

IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(4), 614–627.

Electron g factor engineering in III-V semiconductors for quantum communications

Electronics Letters, 37(7), 464.

A neural network model for the uplift capacity of suction caissons

COMPUTERS AND GEOTECHNICS, 28(4), 269–287.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

JOURNAL OF APPLIED PHYSICS, 89(1), 798–800.

Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 19(3), 695–700.

Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution

JOURNAL OF APPLIED PHYSICS, 89(2), 1130–1137.

Amplification of transverse acoustic phonons in quantum well heterostructures with piezoelectric interaction

Journal of Applied Physics, 90(8), 3934–3941.

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

MICROELECTRONICS RELIABILITY, 41(1), 37–46.

The dynamics of global dominance: European overseas empires, 1415-1980

[Review of ]. International History Review, 23(4), 889–891.

Image denoising: A nonlinear robust statistical approach

IEEE TRANSACTIONS ON SIGNAL PROCESSING, 49(12), 3045–3054.

Gender, slavery and law in colonial India

INDIAN ECONOMIC AND SOCIAL HISTORY REVIEW, Vol. 38, pp. 214–216.

The technical community in the 21st century

Informacije Midem = Journal of Microelectronics, Electronic Components and Materials, 69(1), 37.

Multiuser detection techniques with application to wired and wireless communications systems I

Cherubini, G., Cioffi, J. M., Duel-Hallen, A., & Poor, H. V. (2001, August). IEEE JOURNAL ON SELECTED AREAS IN COMMUNICATIONS, Vol. 19, pp. 1425–1428.

Jinnah, Parkistan and Islamic identity: The search for Saladin

[Review of ]. Journal of Asian Studies, 60(1), 247–249.

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

APPLIED PHYSICS LETTERS, 78(8), 1134–1136.