Displaying works 141 - 160 of 209 in total
Sorted by most recent date added to the index first, which may not be the same as publication date order.
1999 journal article
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.
1999 article
The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices
Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42.
1999 journal article
Potato production on wide beds: Impact on held and selected soil physical characteristics
AMERICAN JOURNAL OF POTATO RESEARCH, 76(6), 323–330.
1999 conference paper
Equivalence classes of circuit mutants for experimental design
Proceedings of the 1999 IEEE International Symposium on Circuits and systems, 6, 432–435.
1999 chapter
Effects of sensor cleaning on the classification rate for an electronic nose
In S. M. B. al. (Ed.), Proceedings of the First Joint BMES/EMBS Conference: Serving humanity, advancing technology: Oct. 13-16 99, Atlanta, GA USA (Vol. 2, p. 814). Piscataway, N.J.: IEEE.
Ed(s): S. al.
1999 journal article
Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579.
1999 conference paper
Design of experiments in CAD: context and new data sets for ISCAS'99
Proceedings of the 1999 IEEE International Symposium on Circuits and systems, 6, 424–427.
1999 journal article
Workflow and end-user quality of service issues in Web-based education
IEEE TRANSACTIONS ON KNOWLEDGE AND DATA ENGINEERING, 11(4), 673–687.
1999 journal article
Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides
IEEE ELECTRON DEVICE LETTERS, 20(6), 262–264.
1999 journal article
Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure
PHYSICAL REVIEW B, 59(20), 12977–12982.
1999 journal article
Productivity analysis of object-oriented software developed in a commercial environment
SOFTWARE-PRACTICE & EXPERIENCE, 29(10), 833–847.
1999 journal article
Optimal buffer management policies for shared-buffer ATM switches
IEEE-ACM TRANSACTIONS ON NETWORKING, 7(4), 575–587.
1999 journal article
Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN
Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.
1999 journal article
Near-field and far-field prediction of quasi-optical grid arrays
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 47(1), 6–13.
1999 article
Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling
Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298.
1999 journal article
Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer
APPLIED PHYSICS LETTERS, 74(21), 3188–3190.
1999 article
Levy processes for image modeling
PROCEEDINGS OF THE IEEE SIGNAL PROCESSING WORKSHOP ON HIGHER-ORDER STATISTICS, pp. 233–236.
1999 journal article
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.
1999 journal article
Gate quality ultrathin (2.5 nm) PECVD deposited oxynitride and nitrided oxide dielectrics
IEEE ELECTRON DEVICE LETTERS, 20(9), 442–444.
1999 journal article
Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition
JOURNAL OF APPLIED PHYSICS, 85(11), 7884–7887.
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