Electrical and Computer Engineering

A slotted-waveguide power amplifier for spatial power-combining applications

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 48(7), 1142–1147.

Using an artificial neural network to detect activations during ventricular fibrillation

COMPUTERS AND BIOMEDICAL RESEARCH, 33(1), 43–58.

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. MICROELECTRONICS RELIABILITY, 40(12), 1987–1995.

Silicon planar ACCUFET: improved power MOSFET structure

ELECTRONICS LETTERS, 36(10), 913–915.

Progressive suppression of spin relaxation in two-dimensional channels of finite width

Physical Review B, 61(19), 13115–13120.

Object oriented microwave circuit simulation

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 10(3), 164–182.

Micromachines and textiles: Matching two industries

Integrated parametric timing optimization of digital systems

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 19(4), 482–489.

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

APPLIED PHYSICS LETTERS, 76(1), 43–45.

Planarization processes and applications III. As-deposited and annealed film properties

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524.

Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

APPLIED PHYSICS LETTERS, 76(15), 1969–1971.

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.

Implementation of multispectral image classification on a remote adaptive computer

VLSI Design (Yverdon, Switzerland), 10(3), 307–319.

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853.

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077–1080.

Image segmentation and edge enhancement with stabilized inverse diffusion equations

IEEE TRANSACTIONS ON IMAGE PROCESSING, 9(2), 256–266.

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447.