Electrical and Computer Engineering

Beyond Turk and Hindu: Rethinking religious identities in Islamicate South Asia

Gainesville, FL: University of Florida Press.

A slotted-waveguide power amplifier for spatial power-combining applications

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 48(7), 1142–1147.

Using an artificial neural network to detect activations during ventricular fibrillation

COMPUTERS AND BIOMEDICAL RESEARCH, 33(1), 43–58.

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides

Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (< 2.0 nm) single layer and dual layer gate oxides. MICROELECTRONICS RELIABILITY, 40(12), 1987–1995.

Silicon planar ACCUFET: improved power MOSFET structure

ELECTRONICS LETTERS, 36(10), 913–915.

Progressive suppression of spin relaxation in two-dimensional channels of finite width

Physical Review B, 61(19), 13115–13120.

Object oriented microwave circuit simulation

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 10(3), 164–182.

Micromachines and textiles: Matching two industries

Integrated parametric timing optimization of digital systems

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 19(4), 482–489.

Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix

APPLIED PHYSICS LETTERS, 76(1), 43–45.

Planarization processes and applications III. As-deposited and annealed film properties

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524.

Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

APPLIED PHYSICS LETTERS, 76(15), 1969–1971.

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.

Implementation of multispectral image classification on a remote adaptive computer

VLSI Design (Yverdon, Switzerland), 10(3), 307–319.

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858.

Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853.

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077–1080.

Image segmentation and edge enhancement with stabilized inverse diffusion equations

IEEE TRANSACTIONS ON IMAGE PROCESSING, 9(2), 256–266.