Electrical & Computer Engineering

Implementing Digital Power Control In Automotive Alternators

Presented at the Digital Power Forum, Boston MA.

Flip chip solder joint failure modes

Advanced Packaging, 14(10), 14–19.

Modeling deformation in microelectronics BGA solder joints under high current density. Part I. Simulation and testing

Proceedings Electronic Components and Technology, 2005. ECTC '05. Presented at the 2005 55th Electronic Components and Technology Conference.

Languages and compilers for parallel computing

Tasking with out-of-order spawn in TLS chip multiprocessors: Microarchitecture and compilation

Proceedings of the 19th Annual International conference on Supercomputing, 179–188.

SESC simulator, January 2005

Modeling and optimization of single-element bulk SiGe thin-film coolers

Microscale Thermophysical Engineering, 9(1), 99–118.

Does Shafer-Landau Have a Problem with Supervenience?

Philosophical Studies, 126(2), 297–311.

Gallium Oxide as a host for rare earth elements

Materials Research Society Symposium Proceedings, 866, 177–182.

Synthesis and Film-Forming Properties of Ethynylporphyrins

Chemistry of Materials, 17(14), 3728–3742.

Cover Picture: An Engineered Virus as a Scaffold for Three-Dimensional Self-Assembly on the Nanoscale (Small 7/2005)

Small, 1(7), 669–669.

Cover Picture: An Engineered Virus as a Scaffold for Three-Dimensional Self-Assembly on the Nanoscale (Small 7/2005)

Small, 1(7), 669–669.

A study of bacterial flagellar bundling

Bulletin of Mathematical Biology, 67(1), 137–168.

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Journal of Applied Physics, 98(9), 093519.

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Journal of Applied Physics, 98(3), 033508.

Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates

Journal of Applied Physics, 97(1), 013517.

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

Journal of Crystal Growth, 281(1), 55–61.

Optoelectronic devices on bulk GaN

Journal of Crystal Growth, 281(1), 101–106.

Nonpolara-plane HVPE GaN: growth and in-plane anisotropic properties

Physica Status Solidi (c), 2(7), 2027–2031.

Photoluminescence of GaN/AlN superlattices grown by MOCVD

Physica Status Solidi (c), 2(7), 2345–2348.