Electrical & Computer Engineering

Development of a SiC SSPC Module with Advanced High Temperature Packaging

Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT), 2010(HITEC), 000310–000315.

A MEMS Sensor for Gas Detection in High Voltage Oil Filled Equipment

2010 IEEE Industry Applications Society Annual Meeting. Presented at the 2010 IEEE Industry Applications Society Annual Meeting.

Mmt: Exploiting fine-grained parallelism in dynamic memory management

2010 IEEE International Symposium on Parallel & Distributed Processing (IPDPS), 1–12.

Design Trade-offs for Memory Level Parallelism on an Asymmetric Multicore System

Pespma 2010-Workshop on Parallel Execution of Sequential Programs on Multi-core Architecture.

Special Issue on Artificial Immune Systems: Theory and Applications

Neural Computing and Applications, 19(4), 647–647.

Accelerating MATLAB Image Processing Toolbox Functions on GPUs

Proceedings of the 3rd Workshop on General-Purpose Computation on Graphics Processing Units, 75–85.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

Adaptive integer kernels and dyadic approximation error analysis for state-of-the-art video codecs

The Hong Kong Polytechnic University.

Amorphous InGaZnO logic gates for transparent electronics

Device Research Conference - Conference Digest, DRC, 121–122.

Effects of nanoscale porosity on thermoelectric properties of SiGe

Journal of Applied Physics, 107(9), 094308.

Local Occlusion Detection under Deformations Using Topological Invariants

In Computer Vision – ECCV 2010 (pp. 101–114).

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.