Electrical & Computer Engineering

Special Issue on Artificial Immune Systems: Theory and Applications

Neural Computing and Applications, 19(4), 647–647.

Accelerating MATLAB Image Processing Toolbox Functions on GPUs

Proceedings of the 3rd Workshop on General-Purpose Computation on Graphics Processing Units, 75–85.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

Adaptive integer kernels and dyadic approximation error analysis for state-of-the-art video codecs

The Hong Kong Polytechnic University.

Amorphous InGaZnO logic gates for transparent electronics

Device Research Conference - Conference Digest, DRC, 121–122.

Effects of nanoscale porosity on thermoelectric properties of SiGe

Journal of Applied Physics, 107(9), 094308.

Local Occlusion Detection under Deformations Using Topological Invariants

In Computer Vision – ECCV 2010 (pp. 101–114).

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.