Electrical & Computer Engineering

College of Engineering

Works Published in 2010

Sorted by most recent date added to the index first, which may not be the same as publication date order.

2010 journal article

Special Issue on Artificial Immune Systems: Theory and Applications

Neural Computing and Applications, 19(4), 647–647.

By: X. Gao, M. Chow, D. Pelta & J. Timmis

Source: Crossref
Added: April 4, 2021

2010 conference paper

Accelerating MATLAB Image Processing Toolbox Functions on GPUs

Proceedings of the 3rd Workshop on General-Purpose Computation on Graphics Processing Units, 75–85.

By: J. Kong, M. Dimitrov, Y. Yang, J. Liyanage, L. Cao, J. Staples, M. Mantor, H. Zhou

Event: 3rd Workshop on General-Purpose Computation on Graphics Processing Units at Pittsburgh, Pennsylvania, USA

Sources: NC State University Libraries, ORCID
Added: February 7, 2021

2010 journal article

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Semiconductor Science and Technology, 26(2), 022002.

By: Y. Wang, S. Alur, Y. Sharma, F. Tong, R. Thapa, P. Gartland, T. Issacs-Smith, C. Ahyi ...

Source: Crossref
Added: December 21, 2020

2010 thesis

Adaptive integer kernels and dyadic approximation error analysis for state-of-the-art video codecs

The Hong Kong Polytechnic University.

By: C. Wong

Source: ORCID
Added: October 16, 2020

2010 conference paper

Amorphous InGaZnO logic gates for transparent electronics

Device Research Conference - Conference Digest, DRC, 121–122.

By: H. Luo, P. Wellenius, L. Lunardi & J. Muth

Source: ORCID
Added: September 21, 2020

2010 journal article

Effects of nanoscale porosity on thermoelectric properties of SiGe

Journal of Applied Physics, 107(9), 094308.

By: H. Lee, D. Vashaee, D. Wang, M. Dresselhaus, Z. Ren & G. Chen

Source: Crossref
Added: August 28, 2020

2010 chapter

Local Occlusion Detection under Deformations Using Topological Invariants

In Computer Vision – ECCV 2010 (pp. 101–114).

By: E. Lobaton, R. Vasudevan, R. Bajcsy & R. Alterovitz

Source: Crossref
Added: August 28, 2020

2010 journal article

Radiation-induced defects in GaN

Physica Scripta, T141, 014015.

By: N. Son, C. Hemmingsson, N. Morishita, T. Ohshima, T. Paskova, K. Evans, A. Usui, J. Isoya, B. Monemar, E. Janzén

Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on the terahertz conductivity of GaN single crystals

Journal of Physics D: Applied Physics, 43(14), 145401.

By: F. Kadlec, C. Kadlec, T. Paskova & K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

Applied Physics Letters, 97(3), 031110.

By: X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Applied Physics Letters, 96(13), 133505.

By: J. Leach, C. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates

Applied Physics Letters, 96(10), 102109.

By: J. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates

Applied Physics Letters, 96(5), 051101.

By: T. Detchprohm, M. Zhu, Y. Li, L. Zhao, S. You, C. Wetzel, E. Preble, T. Paskova, D. Hanser

Source: Crossref
Added: August 28, 2020

2010 journal article

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

Solid-State Electronics, 54(11), 1470–1473.

By: D. Storm, D. Katzer, D. Deen, R. Bass, D. Meyer, J. Roussos, S. Binari, T. Paskova, E. Preble, K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

Revealing extended defects in HVPE-grown GaN

Journal of Crystal Growth, 312(18), 2611–2615.

By: J. Weyher, B. łucznik, I. Grzegory, J. Smalc-Koziorowska & T. Paskova

Source: Crossref
Added: August 28, 2020

2010 journal article

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

Journal of Crystal Growth, 312(8), 1205–1209.

By: P. Gladkov, J. Humlíček, E. Hulicius, T. Šimeček, T. Paskova & K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation

Journal of Electronic Materials, 39(10), 2237–2242.

By: H. Xu, S. Alur, Y. Wang, A. Cheng, K. Kang, Y. Sharma, M. Park, C. Ahyi ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Journal of Electronic Materials, 39(5), 504–516.

By: J. Grenko, C. Reynolds, D. Barlage, M. Johnson, S. Lappi, C. Ebert, E. Preble, T. Paskova, K. Evans

Source: Crossref
Added: August 28, 2020

2010 journal article

The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes

Physica Status Solidi (RRL) - Rapid Research Letters, 4(8-9), 194–196.

By: X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis ...

Source: Crossref
Added: August 28, 2020

2010 journal article

Cyan and green light emitting diode on non-polar m -plane GaN bulk substrate

Physica Status Solidi (c), 7(7-8), 2190–2192.

By: T. Detchprohm, M. Zhu, S. You, Y. Li, L. Zhao, E. Preble, T. Paskova, D. Hanser, C. Wetzel

Source: Crossref
Added: August 28, 2020