TY - CONF
TI - Ecological aspects of coral transplantation
AU - H.T., Yap
AU - Alvarez, R.M.
AU - Custodio, H.M., III
AU - Dizon, R.M.
T2 - 8th International Coral Reef Symposium
A2 - Lessios, H.A.
A2 - Macintyre, I.E.
C2 - 1997///
C3 - Proceedings of the 8th International Coral Reef Symposium, Panama, June 24-29,1996
CY - Smithsonian Tropical Research Institute, Balboa, Panama
DA - 1997///
PY - 1996/6/24/
VL - 1
PB - Smithsonian Tropical Research Institute
ER -
TY - CONF
TI - Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
C2 - 1997///
C3 - Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996
CY - Bristol, UK
DA - 1997///
SP - 195-8
PB - IOP Publishing
ER -
TY - CONF
TI - Status of nitride based light emitting and laser diodes on SiC
C2 - 1997///
C3 - Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997
CY - Boston, MA, USA
DA - 1997///
VL - 482
SP - 1169-1178
PB - MRS
ER -
TY - JOUR
TI - Strain determination in heteroepitaxial GaN
AU - Skromme, Brian
AU - Zhao, H.
AU - Wang, D.
AU - Kong, Hua-Shuang
AU - Leonard, Michelle
AU - Bulman, G.
AU - Molnar, Richard J.
T2 - Applied Physics Letters
AB - Residual strains have been evaluated in a variety of GaN layers grown on sapphire or 6H-SiC from wafer curvature at 293 K, which avoids needing to know the unstrained lattice parameters or energy gap of GaN in advance. Estimated strains at 1.7 K are correlated with the energy of the A free exciton to determine its strain dependence. We find that strain-free GaN has an A exciton energy of 3.468±0.002 eV at 1.7 K, and 293 K lattice parameters a=3.1912 Å and c=5.1836 Å. These values imply that GaN on SiC is frequently under net biaxial compressive stress due to residual lattice mismatch stress, and that several hundred μm thick GaN layers on sapphire and homoepitaxial layers grown on bulk platelets grown at high pressure are both under about 1×10−3 in-plane compressive strain. These conclusions conflict with most previous assumptions.
DA - 1997///
PY - 1997///
DO - 10.1063/1.119659
VL - 71
IS - 6
SP - 829-831
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0000723959&partnerID=MN8TOARS
N1 - \urlhttp://ui.adsabs.harvard.edu/abs/1997ApPhL..71..829S/abstract ; \urlhttps://aip.scitation.org/doi/10.1063/1.119659 ; \urlhttp://scitation.aip.org/content/aip/journal/apl/71/6/10.1063/1.119659 ; \urlhttps://asu.pure.elsevier.com/en/publications/strain-determination-in-heteroepitaxial-gan
RN - \urlhttp://ui.adsabs.harvard.edu/abs/1997ApPhL..71..829S/abstract ; \urlhttps://aip.scitation.org/doi/10.1063/1.119659 ; \urlhttp://scitation.aip.org/content/aip/journal/apl/71/6/10.1063/1.119659 ; \urlhttps://asu.pure.elsevier.com/en/publications/strain-determination-in-heteroepitaxial-gan
ER -
TY - CONF
TI - Nitride-based emitters on SiC substrates
AU - Edmond, John A.
AU - Kong, Hua-Shuang
AU - Leonard, Michelle
AU - Doverspike, K.
AU - Bulman, Gary E.
AU - Weeks, Warren
AU - Irvine, Kenneth
AU - Vladimir, Dmitriev
AB - Single crystal thin films with compositions from the AlN- InN-GaN system were grown via metal-organic chemical vapor deposition on single crystal 6H-SiC substrates. AlGaN containing high and low fractions of Al was grown directly on the SiC for use as a buffer layer. Subsequent epitaxial layers of GaN and AlGaN were doped with Mg and Si to achieve p-type conductivity, respectively. N-type InGaN layers with In compositions up to approximately 50 percent were also achieved. Room temperature photoluminescence on these films exhibited single peaks in the spectral range from the UV to green. Various layers were combined to form light emitting diode (LED) and laser structures. Blue LEDs with both insulating and conductive buffer layers exhibited an external quantum efficiency of 2-3 percent with a forward operating voltage of 3.4-3.7 V. Laser diode structures having a separate confinement heterostructure multiple quantum well configuration were optically and electrically pumped. Photopumping resulted in stimulated emission at 391 nm. Electrically pumped structures resulted in a peak emission at 393 nm and a bandwidth of 12 nm. No lasing was observed.
C2 - 1997///
C3 - Proceedings of SPIE - The International Society for Optical Engineering
CY - USA
DA - 1997///
DO - 10.1117/12.271027
VL - 3002
SP - 2-10
PB - SPIE-Int. Soc. Opt. Eng.
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0004558139&partnerID=MN8TOARS
N1 - \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3002/1/Nitride-based-emitters-on-SiC-substrates/10.1117/12.271027.full ; \urlhttps://research-information.bris.ac.uk/en/publications/nitride-based-emitters-on-sic-substrates-2 ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=918568
RN - \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3002/1/Nitride-based-emitters-on-SiC-substrates/10.1117/12.271027.full ; \urlhttps://research-information.bris.ac.uk/en/publications/nitride-based-emitters-on-sic-substrates-2 ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=918568
KW - silicon carbide
KW - gallium nitride
KW - aluminum gallium nitride
KW - indium gallium nitride
KW - chemical vapor deposition
KW - light emitting diode
KW - laser
KW - conductive buffer
ER -
TY - JOUR
TI - Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
AU - Johnson, Mark
AU - Hughes, W. C.
AU - Rowland, W. H.
AU - Cook, J. W.
AU - Schetzina, J. F.
AU - Leonard, Michelle
AU - Kong, Hua-Shuang
AU - Edmond, John A.
AU - Zavada, J. M.
T2 - Journal of Crystal Growth
AB - GaN, AlGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaNSiC substrates and heteroepitaxially onto LiGaO2 substrates. LiGaO2 is an ordered and closely-lattice-matched orthorhombic variant of the wurtzite crystal structure of GaN. A low-temperature AlN buffer layer is necessary in order to nucleate GaN on LiGaO2. Thick GaN and AlGaN layers may then be grown once deposition is initiated. InGaN has been grown by MBE at mole fractions of up to 20% as a quantum well between GaN cladding layers. The indium containing structures were deposited onto GaNSiC substrates to focus the development effort on the InGaN growth process rather than on heteroepitaxial nucleation. A modulated beam technique, with alternating short periods of (In, Ga)N and (Ga)N, was used to grow high-quality InGaN. The modulated beam limits the nucleation of metal droplets on the growth surface, which form due to thermodynamic limitations. A narrow PL dominated by band edge luminescence at 421 nm results from this growth technique. Growth of GaN at high temperatures is also reported.
DA - 1997///
PY - 1997///
DO - 10.1016/S0022-0248(96)01019-6
VL - 175-176
IS - PART 1
SP - 72-78
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001866991&partnerID=MN8TOARS
N1 - Place: Malibu, CA, USA Publisher: Elsevier Sci B.V.
RN - Place: Malibu, CA, USA Publisher: Elsevier Sci B.V.
ER -
TY - CONF
TI - Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN
AU - Skromme, B.J.
AU - Zhao, H.
AU - Goldenberg, B.
AU - Kong, H.S.
AU - Leonard, M.T.
AU - Bulman, G.E.
AU - Abernathy, C.R.
AU - Pearton, S.J.
C2 - 1997///
C3 - Materials Research Society Symposium - Proceedings
DA - 1997///
VL - 449
SP - 713-718
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS
ER -
TY - CONF
TI - MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources
AU - Johnson, M.A.L.
AU - Yu, Z.
AU - Boney, C.
AU - Rowland, W.H.
AU - Hughes, W.C.
AU - Cook, J.W.
AU - Schetzina, J.F.
AU - El-Masry, N.A.
AU - Leonard, M.T.
AU - Kong, H.S.
AU - Edmond, J.A.
C2 - 1997///
C3 - Materials Research Society Symposium - Proceedings
DA - 1997///
VL - 449
SP - 271-276
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS
ER -
TY - JOUR
TI - Dynamics of photoexcited carriers in AlxGa1-xN/GaN double heterostructures
AU - Shan, W.
AU - Xu, S.
AU - Little, B. D.
AU - Xie, Xincheng
AU - Song, J. J.
AU - Bulman, Gary E.
AU - Kong, H. S.
AU - Leonard, Michelle
AU - Krishnankutty, S.
T2 - Journal of Applied Physics
AB - We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K.
DA - 1997///
PY - 1997///
DO - 10.1063/1.366101
VL - 82
IS - 6
SP - 3158-3160
UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001232521&partnerID=MN8TOARS
N1 - Place: USA Publisher: AIP
RN - Place: USA Publisher: AIP
ER -
TY - CONF
TI - First nitride laser diode on silicon carbide
AU - Brown, J.D.
AU - Swindell, JT
AU - Johnson, Mark
AU - Yu, Z.
AU - Schetzina, J. F.
AU - Bulman, Gary E.
AU - Doverspike, K.
AU - Sheppard, S.T.
AU - Weeks, T. W.
AU - Leonard, Michelle
AU - Kong, Hua-Shuang
AU - Dieringer, Heidi Marie
AU - Carter, C. H.
AU - Edmond, John A.
C2 - 1997///
C3 - Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997
CY - Boston, MA, USA
DA - 1997///
DO - 10.1557/proc-482-1179
VL - 482
SP - 1179-1184
PB - MRS
UR - https://www.lens.org/013-162-520-839-795
N1 - \urlhttp://journals.cambridge.org/abstract_S1946427400218575
RN - \urlhttp://journals.cambridge.org/abstract_S1946427400218575
ER -
TY - JOUR
TI - The Information Frontier
AU - Currie, Debra L.U.S.A.I.N./I.A.A.L.D.Joint Conference Proceedings
T2 - IAALD Quarterly Bulletin
DA - 1997///
PY - 1997///
VL - XLII
IS - 3/4
ER -
TY - MPCT
TI - A Literary portrait of Raleigh [videorecording]
CN - F264 .R1 L58 1997 [Hill & Special Collections]
DA - 1997///
PY - 1997///
ER -
TY - JOUR
TI - Public access to electronic federal depository information in regional depository libraries
AU - Ford, S
T2 - GOVERNMENT INFORMATION QUARTERLY
AB - This article reports on a study of regional depository libraries for a descriptive analysis of regional depository library capabilities and practice in providing public access to electronic federal government information. The study indicates that regional depository libraries are progressing in the creation of an environment that supports public access to this information. The responding regionals are equipped with public access microcomputer workstations and a majority provide access to CD-ROM's, the Internet, and GPO Access. Adequate staffing and resources, however, remain a problem for some.
DA - 1997///
PY - 1997///
DO - 10.1016/S0740-624X(97)90051-4
VL - 14
IS - 1
SP - 51-63
SN - 0740-624X
ER -
TY - JOUR
TI - Expanding horizons for GIS services in academic libraries
AU - Argentati, CD
T2 - JOURNAL OF ACADEMIC LIBRARIANSHIP
AB - During the past five years, libraries engaged in GIS services have encountered challenges and opportunities related to partnerships, staffing and management, user education, and data access. Many avenues exists for expanding both the scope and depth of these services to meet the user community's needs.
DA - 1997/11//
PY - 1997/11//
DO - 10.1016/s0099-1333(97)90170-1
VL - 23
IS - 6
SP - 463-468
SN - 0099-1333
ER -
TY - JOUR
TI - Tar Heel towns: Bahama
AU - Reevy, T.
T2 - Our State (Greensboro, N.C.)
DA - 1997///
PY - 1997///
VL - 64
IS - 10
SP - 10-11
ER -
TY - MANSCPT
TI - Sklabina Castle
AU - Reevy, T.
DA - 1997///
PY - 1997///
SP - 91
ER -
TY - JOUR
TI - Planning an interview: What do candidates want?
AU - Kimmel, S.
AU - Dimarco, S. R.
T2 - College & Research Libraries News
DA - 1997///
PY - 1997///
VL - 58
IS - 4
SP - 249-253
ER -