TY - CONF TI - Ecological aspects of coral transplantation AU - H.T., Yap AU - Alvarez, R.M. AU - Custodio, H.M., III AU - Dizon, R.M. T2 - 8th International Coral Reef Symposium A2 - Lessios, H.A. A2 - Macintyre, I.E. C2 - 1997/// C3 - Proceedings of the 8th International Coral Reef Symposium, Panama, June 24-29,1996 CY - Smithsonian Tropical Research Institute, Balboa, Panama DA - 1997/// PY - 1996/6/24/ VL - 1 PB - Smithsonian Tropical Research Institute ER - TY - CONF TI - Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy C2 - 1997/// C3 - Proceedings of 23rd International Symposium on Compound Semiconductors, 23-27 Sept. 1996 CY - Bristol, UK DA - 1997/// SP - 195-8 PB - IOP Publishing ER - TY - CONF TI - Status of nitride based light emitting and laser diodes on SiC C2 - 1997/// C3 - Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997 CY - Boston, MA, USA DA - 1997/// VL - 482 SP - 1169-1178 PB - MRS ER - TY - JOUR TI - Strain determination in heteroepitaxial GaN AU - Skromme, Brian AU - Zhao, H. AU - Wang, D. AU - Kong, Hua-Shuang AU - Leonard, Michelle AU - Bulman, G. AU - Molnar, Richard J. T2 - Applied Physics Letters AB - Residual strains have been evaluated in a variety of GaN layers grown on sapphire or 6H-SiC from wafer curvature at 293 K, which avoids needing to know the unstrained lattice parameters or energy gap of GaN in advance. Estimated strains at 1.7 K are correlated with the energy of the A free exciton to determine its strain dependence. We find that strain-free GaN has an A exciton energy of 3.468±0.002 eV at 1.7 K, and 293 K lattice parameters a=3.1912 Å and c=5.1836 Å. These values imply that GaN on SiC is frequently under net biaxial compressive stress due to residual lattice mismatch stress, and that several hundred μm thick GaN layers on sapphire and homoepitaxial layers grown on bulk platelets grown at high pressure are both under about 1×10−3 in-plane compressive strain. These conclusions conflict with most previous assumptions. DA - 1997/// PY - 1997/// DO - 10.1063/1.119659 VL - 71 IS - 6 SP - 829-831 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0000723959&partnerID=MN8TOARS N1 - \urlhttp://ui.adsabs.harvard.edu/abs/1997ApPhL..71..829S/abstract ; \urlhttps://aip.scitation.org/doi/10.1063/1.119659 ; \urlhttp://scitation.aip.org/content/aip/journal/apl/71/6/10.1063/1.119659 ; \urlhttps://asu.pure.elsevier.com/en/publications/strain-determination-in-heteroepitaxial-gan RN - \urlhttp://ui.adsabs.harvard.edu/abs/1997ApPhL..71..829S/abstract ; \urlhttps://aip.scitation.org/doi/10.1063/1.119659 ; \urlhttp://scitation.aip.org/content/aip/journal/apl/71/6/10.1063/1.119659 ; \urlhttps://asu.pure.elsevier.com/en/publications/strain-determination-in-heteroepitaxial-gan ER - TY - CONF TI - Nitride-based emitters on SiC substrates AU - Edmond, John A. AU - Kong, Hua-Shuang AU - Leonard, Michelle AU - Doverspike, K. AU - Bulman, Gary E. AU - Weeks, Warren AU - Irvine, Kenneth AU - Vladimir, Dmitriev AB - Single crystal thin films with compositions from the AlN- InN-GaN system were grown via metal-organic chemical vapor deposition on single crystal 6H-SiC substrates. AlGaN containing high and low fractions of Al was grown directly on the SiC for use as a buffer layer. Subsequent epitaxial layers of GaN and AlGaN were doped with Mg and Si to achieve p-type conductivity, respectively. N-type InGaN layers with In compositions up to approximately 50 percent were also achieved. Room temperature photoluminescence on these films exhibited single peaks in the spectral range from the UV to green. Various layers were combined to form light emitting diode (LED) and laser structures. Blue LEDs with both insulating and conductive buffer layers exhibited an external quantum efficiency of 2-3 percent with a forward operating voltage of 3.4-3.7 V. Laser diode structures having a separate confinement heterostructure multiple quantum well configuration were optically and electrically pumped. Photopumping resulted in stimulated emission at 391 nm. Electrically pumped structures resulted in a peak emission at 393 nm and a bandwidth of 12 nm. No lasing was observed. C2 - 1997/// C3 - Proceedings of SPIE - The International Society for Optical Engineering CY - USA DA - 1997/// DO - 10.1117/12.271027 VL - 3002 SP - 2-10 PB - SPIE-Int. Soc. Opt. Eng. UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0004558139&partnerID=MN8TOARS N1 - \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3002/1/Nitride-based-emitters-on-SiC-substrates/10.1117/12.271027.full ; \urlhttps://research-information.bris.ac.uk/en/publications/nitride-based-emitters-on-sic-substrates-2 ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=918568 RN - \urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/3002/1/Nitride-based-emitters-on-SiC-substrates/10.1117/12.271027.full ; \urlhttps://research-information.bris.ac.uk/en/publications/nitride-based-emitters-on-sic-substrates-2 ; \urlhttps://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=918568 KW - silicon carbide KW - gallium nitride KW - aluminum gallium nitride KW - indium gallium nitride KW - chemical vapor deposition KW - light emitting diode KW - laser KW - conductive buffer ER - TY - JOUR TI - Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy AU - Johnson, Mark AU - Hughes, W. C. AU - Rowland, W. H. AU - Cook, J. W. AU - Schetzina, J. F. AU - Leonard, Michelle AU - Kong, Hua-Shuang AU - Edmond, John A. AU - Zavada, J. M. T2 - Journal of Crystal Growth AB - GaN, AlGaN and InGaN films have been grown by molecular beam epitaxy (MBE) using RF plasma sources for the generation of active nitrogen. These films have been deposited homoepitaxially onto GaNSiC substrates and heteroepitaxially onto LiGaO2 substrates. LiGaO2 is an ordered and closely-lattice-matched orthorhombic variant of the wurtzite crystal structure of GaN. A low-temperature AlN buffer layer is necessary in order to nucleate GaN on LiGaO2. Thick GaN and AlGaN layers may then be grown once deposition is initiated. InGaN has been grown by MBE at mole fractions of up to 20% as a quantum well between GaN cladding layers. The indium containing structures were deposited onto GaNSiC substrates to focus the development effort on the InGaN growth process rather than on heteroepitaxial nucleation. A modulated beam technique, with alternating short periods of (In, Ga)N and (Ga)N, was used to grow high-quality InGaN. The modulated beam limits the nucleation of metal droplets on the growth surface, which form due to thermodynamic limitations. A narrow PL dominated by band edge luminescence at 421 nm results from this growth technique. Growth of GaN at high temperatures is also reported. DA - 1997/// PY - 1997/// DO - 10.1016/S0022-0248(96)01019-6 VL - 175-176 IS - PART 1 SP - 72-78 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001866991&partnerID=MN8TOARS N1 - Place: Malibu, CA, USA Publisher: Elsevier Sci B.V. RN - Place: Malibu, CA, USA Publisher: Elsevier Sci B.V. ER - TY - CONF TI - Photoluminescence, reflectance, magnetospectroscopy of shallow excitons in GaN AU - Skromme, B.J. AU - Zhao, H. AU - Goldenberg, B. AU - Kong, H.S. AU - Leonard, M.T. AU - Bulman, G.E. AU - Abernathy, C.R. AU - Pearton, S.J. C2 - 1997/// C3 - Materials Research Society Symposium - Proceedings DA - 1997/// VL - 449 SP - 713-718 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030644541&partnerID=MN8TOARS ER - TY - CONF TI - MBE growth of III-V nitride films and quantum-well structures using multiple rf plasma sources AU - Johnson, M.A.L. AU - Yu, Z. AU - Boney, C. AU - Rowland, W.H. AU - Hughes, W.C. AU - Cook, J.W. AU - Schetzina, J.F. AU - El-Masry, N.A. AU - Leonard, M.T. AU - Kong, H.S. AU - Edmond, J.A. C2 - 1997/// C3 - Materials Research Society Symposium - Proceedings DA - 1997/// VL - 449 SP - 271-276 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0030676650&partnerID=MN8TOARS ER - TY - JOUR TI - Dynamics of photoexcited carriers in AlxGa1-xN/GaN double heterostructures AU - Shan, W. AU - Xu, S. AU - Little, B. D. AU - Xie, Xincheng AU - Song, J. J. AU - Bulman, Gary E. AU - Kong, H. S. AU - Leonard, Michelle AU - Krishnankutty, S. T2 - Journal of Applied Physics AB - We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K. DA - 1997/// PY - 1997/// DO - 10.1063/1.366101 VL - 82 IS - 6 SP - 3158-3160 UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-0001232521&partnerID=MN8TOARS N1 - Place: USA Publisher: AIP RN - Place: USA Publisher: AIP ER - TY - CONF TI - First nitride laser diode on silicon carbide AU - Brown, J.D. AU - Swindell, JT AU - Johnson, Mark AU - Yu, Z. AU - Schetzina, J. F. AU - Bulman, Gary E. AU - Doverspike, K. AU - Sheppard, S.T. AU - Weeks, T. W. AU - Leonard, Michelle AU - Kong, Hua-Shuang AU - Dieringer, Heidi Marie AU - Carter, C. H. AU - Edmond, John A. C2 - 1997/// C3 - Proceedings of the 1997 MRS Fall Meeting, December 1, 1997 - December 4, 1997 CY - Boston, MA, USA DA - 1997/// DO - 10.1557/proc-482-1179 VL - 482 SP - 1179-1184 PB - MRS UR - https://www.lens.org/013-162-520-839-795 N1 - \urlhttp://journals.cambridge.org/abstract_S1946427400218575 RN - \urlhttp://journals.cambridge.org/abstract_S1946427400218575 ER - TY - JOUR TI - The Information Frontier AU - Currie, Debra L.U.S.A.I.N./I.A.A.L.D.Joint Conference Proceedings T2 - IAALD Quarterly Bulletin DA - 1997/// PY - 1997/// VL - XLII IS - 3/4 ER - TY - MPCT TI - A Literary portrait of Raleigh [videorecording] CN - F264 .R1 L58 1997 [Hill & Special Collections] DA - 1997/// PY - 1997/// ER - TY - JOUR TI - Public access to electronic federal depository information in regional depository libraries AU - Ford, S T2 - GOVERNMENT INFORMATION QUARTERLY AB - This article reports on a study of regional depository libraries for a descriptive analysis of regional depository library capabilities and practice in providing public access to electronic federal government information. The study indicates that regional depository libraries are progressing in the creation of an environment that supports public access to this information. The responding regionals are equipped with public access microcomputer workstations and a majority provide access to CD-ROM's, the Internet, and GPO Access. Adequate staffing and resources, however, remain a problem for some. DA - 1997/// PY - 1997/// DO - 10.1016/S0740-624X(97)90051-4 VL - 14 IS - 1 SP - 51-63 SN - 0740-624X ER - TY - JOUR TI - Expanding horizons for GIS services in academic libraries AU - Argentati, CD T2 - JOURNAL OF ACADEMIC LIBRARIANSHIP AB - During the past five years, libraries engaged in GIS services have encountered challenges and opportunities related to partnerships, staffing and management, user education, and data access. Many avenues exists for expanding both the scope and depth of these services to meet the user community's needs. DA - 1997/11// PY - 1997/11// DO - 10.1016/s0099-1333(97)90170-1 VL - 23 IS - 6 SP - 463-468 SN - 0099-1333 ER - TY - JOUR TI - Tar Heel towns: Bahama AU - Reevy, T. T2 - Our State (Greensboro, N.C.) DA - 1997/// PY - 1997/// VL - 64 IS - 10 SP - 10-11 ER - TY - MANSCPT TI - Sklabina Castle AU - Reevy, T. DA - 1997/// PY - 1997/// SP - 91 ER - TY - JOUR TI - Planning an interview: What do candidates want? AU - Kimmel, S. AU - Dimarco, S. R. T2 - College & Research Libraries News DA - 1997/// PY - 1997/// VL - 58 IS - 4 SP - 249-253 ER -