2023 article
GaAs/GaAsSb Core-Shell Configured Nanowire-Based Avalanche Photodiodes up to 1.3?m Light Detection
Pokharel, R., Kuchoor, H., Parakh, M., Devkota, S., Dawkins, K., Ramaswamy, P., … Iyer, S. (2023, March 20). ACS APPLIED NANO MATERIALS.
author keywords: core-shell nanowires; avalanche photodiodes; SAM-APD; GaAsSb; hybrid axial; CS NWs; near-infrared; photodetector; non-selective growth; ensemble nanowires; self-catalyzed; VLS; VS growth
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: April 11, 2023
We report the first study on a GaAs/GaAsSb core–shell (CS)-configured nanowire (NW)-based separate absorption, charge control, and multiplication region avalanche photodiode (APD) operating in the near-infrared (NIR) region. Heterostructure NWs consisted of GaAs and tunable band gap GaAs1–xSbx serving as the multiplication and absorption layers, respectively. A doping compensation of absorber material to boost material absorption, segment-wise annealing to suppress trap-assisted tunneling, and an intrinsic i-type and n-type combination of the hybrid axial core to suppress axial electric field are successfully adopted in this work to realize a room-temperature (RT) avalanche photodetection extending up to 1.3 μm. In an APD device operating at RT with a unity-gain responsivity of 0.2–0.25 A/W at ∼5 V, the peak gain of 160 @ 1064 nm and 18 V reverse bias, gain >50 @ 1.3 μm, are demonstrated. Thus, this work provides a foundation and prospects for exploiting greater freedom in NW photodiode design using hybrid axial and CS heterostructures.