2003 journal article
Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures
JOURNAL OF APPLIED PHYSICS, 93(12), 9542–9547.
open access via hdl.handle.net (repository)
Source: Web Of Science
Added: August 6, 2018
The electronic properties of inversion domains in a GaN-based lateral polarity heterostructure were investigated using micro-Raman spectroscopy. The piezoelectric polarization of each domain was calculated from strain determined via Raman scattering. The free carrier concentration and electron mobility were deduced from the longitudinal optical phonon–plasmon coupled mode. The electron concentration in the N-face domain was slightly higher than that in the Ga-face domain. It appears that during growth, a larger number of donor impurities may have been incorporated into the N-face domain than into the Ga-face domain.