2020 journal article
An interface-controlled Mott memristor in <bold>alpha</bold>-RuCl3
APPLIED PHYSICS LETTERS, 116(18).
open access via aip.scitation.org (publisher PDF)
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Added: May 26, 2020
Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl3. The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.