2020 journal article
A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
NANOTECHNOLOGY, 31(50).
author keywords: nanowires; molecular beam epitaxy (MBE); Te-doping; near-infrared ensemble photodetector; field emission; low-frequency noise spectroscopy; generation-recombination noise
TL;DR:
The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: October 26, 2020
Abstract This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (TGaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 °C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at ∼1.2 µm was demonstrated. These PDs exhibited responsivity in the range of 580–620 A W−1 and detectivity of 1.2–3.8 × 1012 Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.