The high spatial resolution, controlled etch profiles and uniformity of etching that is achievable with ion-assisted etch processes appear to be counterbalanced with ion-induced defects introduced into the material. We describe assessments of such damage introduced into InP, and propagated into material structures regrown onto those InP substrates. Particular etch chemistries, effective for patterning InP, may have capabilities of mitigating ion-generated defects.