2020 article
Dislocation-Based Thermodynamic Models of V-Pits Formation and Strain Relaxation in InGaN/GaN Epilayers on Si Substrates
TMS 2020 149TH ANNUAL MEETING & EXHIBITION SUPPLEMENTAL PROCEEDINGS, pp. 2057–2064.
author keywords: Threading dislocations; III-Nitride relaxation; V-pits defects; Thermodynamics modeling
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 23, 2021
The strain relaxation mechanism in III-N materials is occurred through the motion of dislocationsDislocations that generated at III-N/Si interfaceInterface as a result of large mismatch in lattice and thermal expansion coefficients. As a result of the large lattice mismatch between different layers, the upper layer gets strained and with thicker layers, the strain energy increases until a thickness limit called the critical material thickness. Most of such dislocationsDislocations (threading dislocationsThreading dislocations ) penetrate the top surface forming V-pits defectsV-pits Defects at the top surface that relax the material. These V-pits directly affect the device efficiency, performance, and reliability. Therefore, in this paper, a thermodynamics-based model will be used to study the V-pits formulation and growth in the III-N (especially, InGaN-based materials). In this model, three types of energies are used under a balanced system to model the V-pit formation and growth. These energies are the strain energy in the InGaN epilayer, the destruction energy as a result of dislocation to form the V-pit, and the strain energy of the V-pits facets that generated during the facet nucleationNucleation .