Intrinsic defects in Bi2Se3 topological insulators tend to produce a high carrier concentration and current leakage through the bulk material. Bi2Se3 thin films were grown by hybrid physical chemical vapor deposition on (0001) Al2O3 substrates with high Se vapor pressure to reduce the occurrence of Se vacancies as the main type of defect. Consequently, the carrier concentration was reduced to ∼5.75 × 1018 cm−3 comparable to reported carrier concentration in Bi2Se3 thin films. Magnetotransport measurements were performed on the films and the data were analyzed for weak anti-localization using the Hikami-Larkin-Nagaoka model. The estimated α and lϕ values showed good agreement with the symplectic case of 2-D transport of topological surface states in the quantum diffusion regime. The temperature and angular dependence of magnetoresistance indicate a large contribution of the 2-D surface carriers to overall transport properties of Bi2Se3 thin film.