2023 conference paper

Advanced GaN IPM for High-Frequency Converter Applications Enabled with Thin-Substrates

2023 IEEE Applied Power Electronics Conference and Exposition (APEC). Presented at the 2023 IEEE Applied Power Electronics Conference and Exposition (APEC).

By: S. Sinha n, T. Cheng n, K. Parmarโ€‰ n & D. Hopkins nโ€‰

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ

Event: 2023 IEEE Applied Power Electronics Conference and Exposition (APEC)

Source: Crossref
Added: July 3, 2023

Extracting the potential of Wide Bandgap (WBG) semiconductor devices needs enhanced electrical and thermal packaging. This paper presents a half-bridge GaN-based Integrated Power Module (IPM) with inclusive gate drivers, driver caps, and decoupling caps for a 500kHz/0.8kW converter application. Presented are the design, fabrication, and experimental characterization of a dense, double-side cooled IPM utilizing an advanced epoxy-resin insulated metal substrate (eIMS) with 120ยตm thin dielectric for 400V/ 8.3ns high edge-rate switching (i.e. with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$dv/dt$</tex> of highest frequency of interest (HFI)). The common mode (CM) capacitance has been optimized. The thermal performance of the module was validated through ANSYS simulation, and the symmetry of the sandwiched substrate structure ensured for symmetric temperature distribution and stress management. An experimental Double Pulse Test (DPT) board with low isolation capacitance was developed to characterize the maximum dynamic performance. Finally, the CM effects on a full-bridge converter application are evaluated to show the efficacy of thin-substrate packaging for application at industrial power levels.