2019 journal article

Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx

IEEE TRANSACTIONS ON ELECTRON DEVICES, 66(1), 539–545.

By: X. Yang n, B. Lee n & V. Misra n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: Atomic layer deposition (ALD); forming gas anneal (FGA) lanthanum silicate (LaSiOx); mobility; SiC; threshold voltage
Source: Web Of Science
Added: January 14, 2019

We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiOx) interface engineering. MOSFETs with LaSiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> after high-temperature FGA show significantly improved V T reliability under positive gate bias. It is found that both the thickness of the initial lanthanum-rich layer and the FGA temperature profoundly influence MOSFET mobility and VT instability under positive bias. There is a tradeoff between mobility and V T shift under positive bias.