1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO 2 versus SiN x insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.