2018 journal article

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

Materials Science Forum, 924, 482–485.

By: M. Kang, K. Lawless, B. Lee & V. Misra

Source: Crossref
Added: July 7, 2020

We investigated the impact of an initial lanthanum oxide (La<jats:sub>2