2014 journal article

Thermal Pathfinding for 3-D ICs

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 4(7), 1159–1168.

By: S. Priyadarshi n, W. Davis n, M. Steer n & P. Franzon n 

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: 3-D IC; electronic system-level (ESL); electrothermal simulation; pathfinding; through-silicon via (TSV); transaction-level simulation
Source: Web Of Science
Added: August 6, 2018

System architects traditionally use high-level models of component blocks to predict trends for various design metrics. However, with continually increasing design complexity and a confusing array of manufacturing choices, system-level design decisions cannot be made without considering physical-level details. This effect is more pronounced for 3-D integrated circuits (ICs) because it provides a plethora of physical-level design choices, such as the number of stacking layers and the type of 3-D bonding method, along with the choices provided by 2-D ICs. Thus, it is necessary for system-level flows to predict the complex interactions among system performance, power, temperature, floorplanning, process technology, computer architecture, and software/workloads. This is often called pathfinding. This paper presents a pathfinding flow that integrates SystemC transaction-level electrical and dynamic thermal simulations. The goal of this flow is to pass complex physical constraints to system architects in a convenient form. The applicability of the proposed flow is shown using an example stacking of two processor cores and L2 cache in two-tier 3-D stack.