2022 journal article
Superconducting phase of TixOy thin films grown by molecular beam epitaxy
Physical Review Materials.
We investigate the complex relationship between the growth conditions and the structural and transport properties of $\mathrm{Ti_xO_y}$ thin films grown by molecular beam epitaxy. Transport properties ranging from metallicity to superconductivity and insulating states are stabilized by effectively tuning the O/Ti ratio via the Ti flux rate and the O partial pressure, $P_{Ox}$, for films grown on (0001)-$\mathrm{Al_2 O_3}$ substrates at 850$^{\circ}$ C. A cubic $c-\mathrm{TiO_{1\pm\delta}}$ buffer layer is formed for low O/Ti ratios while a corundum cr-$\mathrm{Ti_2 O_3}$ layer is formed under higher oxidizing conditions. Metallicity is observed for c-$\mathrm{TiO_{1-\delta}}$ buffer layers. The superconducting $\mathrm{\gamma-Ti_3 O_5}$ Magn\'eli phase is found to nucleate on a c-$\mathrm{TiO_{1-\delta}}$ buffer for intermediate $P_{Ox}$ conditions and an insulator-superconducting transition is observed at 4.5 K (T$_C^{onset}=6 K$) for 85 nm thick films. Strain relaxation of the $\mathrm{\gamma-Ti_3 O_5}$ occurs with increasing film thickness and correlates with a thickness-dependent increase in T$_C$ observed for $\mathrm{Ti_xO_y}$ thin films.