@article{lee_lee_park_lee_2011, title={Full Geometry Optimizations of Bond-Stretch Isomers of C-20(2+) Fullerene Dication by the Hybrid Density Functional B3LYP Methods}, volume={32}, ISSN={["0253-2964"]}, DOI={10.5012/bkcs.2011.32.1.277}, abstractNote={were performed using the hybrid density functional (B3LYP/6-31G(d)) methods. All isomers were found to be true minima by frequency analysis at the level of B3LYP/6-31G(d) under the reinforced tight convergence criterion and a pruned (99,590) grid. The zero-point correction energy for the cage bond-stretch isomers was in the increasing order D}, number={1}, journal={BULLETIN OF THE KOREAN CHEMICAL SOCIETY}, author={Lee, Jihyun and Lee, Changhoon and Park, Sung S. and Lee, Kee Hag.}, year={2011}, month={Jan}, pages={277–280} }
 @article{jha_gurganos_kim_choi_lee_misra_2004, title={A capacitance-based methodology for work function extraction of metals on high-kappa}, volume={25}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2004.829032}, abstractNote={This letter presents a methodology to accurately extract the work function of metal electrodes on high-/spl kappa/ dielectrics with various charge distributions. A mathematical analysis including sources of errors was used to study the effect of charge distribution in gate dielectric stacks on the flatband voltage of the device. The calculations are verified by experimental results obtained for Ru-Ta alloys on HfO/sub 2/ and SiO/sub 2/ gate dielectric stacks. It is shown that accounting for the appropriate charge model is imperative for accurate calculation of workfunction on high-/spl kappa//SiO/sub 2/ gate dielectric stacks.}, number={6}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Jha, R and Gurganos, J and Kim, YH and Choi, R and Lee, J and Misra, V}, year={2004}, month={Jun}, pages={420–423} }
 @article{kim_choi_jha_lee_misra_lee_2004, title={Reliability of high-k dielectrics and its dependence on gate electrode and interfacial high-k bi-layer structure}, volume={44}, ISSN={["0026-2714"]}, DOI={10.1016/j.microrel.2004.07.049}, abstractNote={In this work, we present the reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure. We will also discuss how these factors lead to different charge fluence, charge-to-breakdown, and breakdown characteristics. It is found that the lower Weibull slope of high-k dielectrics is partially attributed to high charge fluence by the lower barrier height of high-k dielectrics, and a different nature of bi-layer structure. In addition, it has been found that there is distinct bi-modal defect generation rate for high-k/SiO 2 stack. A two-step breakdown process was clearly observed. Soft breakdown characteristics were dependent on the barrier heights. It is attributed to different charge fluence by different barrier heights. Charge-to-breakdown shows strong barrier height dependence.}, number={9-11}, journal={MICROELECTRONICS RELIABILITY}, author={Kim, YH and Choi, R and Jha, R and Lee, JH and Misra, V and Lee, JC}, year={2004}, pages={1513–1518} }
 @article{suh_heuss_lee_misra_2003, title={Effect of the composition on the electrical properties of TaSixNy metal gate electrodes}, volume={24}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2003.814009}, abstractNote={In this letter, the effect of silicon and nitrogen on the electrical properties of TaSi/sub x/N/sub y/ gate electrode were investigated. The TaSi/sub x/N/sub y/ films were deposited on SiO/sub 2/ using reactive cosputtering of Ta and Si target in Ar and N/sub 2/ ambient. The thermal stability of TaSi/sub x/N/sub y//SiO/sub 2//p-type Si stacks was evaluated by measuring the flatband voltage and equivalent oxide thickness at 400/spl deg/C and 900/spl deg/C in Ar. It was found that under high temperature anneals, Si-rich TaSi/sub x/N/sub y/ films increased and this was attributed to the formation of a reaction layer at the electrode-dielectric interface. Reducing the Si content alone did not prevent the formation of this reaction layer while removing Si completely by utilizing TaN resulted in work functions that were too high. The presence of both Si and N was deemed necessary and their content was critical in obtaining optimized TaSi/sub x/N/sub y/ gates that are suitable for NMOS devices.}, number={7}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Suh, YS and Heuss, GP and Lee, JH and Misra, V}, year={2003}, month={Jul}, pages={439–441} }
 @article{muth_lee_shmagin_kolbas_casey_keller_mishra_denbaars_1997, title={Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.120191}, abstractNote={The absorption coefficient for a 0.4-μm-thick GaN layer grown on a polished sapphire substrate was determined from transmission measurements at room temperature. A strong, well defined exciton peak for the A and B excitons was obtained. The A, B, and C excitonic features are clearly defined at 77 K. At room temperature, an energy gap Eg=3.452±0.001 eV and an exciton binding energy ExA,B=20.4±0.5 meV for the A and B excitons and ExC=23.5±0.5 meV for the C exciton were determined by analysis of the absorption coefficient. From this measured absorption coefficient, together with the detailed balance approach of van Roosbroek and Shockley, the radiative constant B=1.1×10−8 cm3/s was obtained.}, number={18}, journal={APPLIED PHYSICS LETTERS}, author={Muth, JF and Lee, JH and Shmagin, IK and Kolbas, RM and Casey, HC and Keller, BP and Mishra, UK and DenBaars, SP}, year={1997}, month={Nov}, pages={2572–2574} }
 @article{shmagin_muth_lee_kolbas_balkas_sitar_davis_1997, title={Optical metastability in bulk GaN single crystals}, volume={71}, ISSN={["0003-6951"]}, DOI={10.1063/1.119577}, abstractNote={Bulk GaN single crystals were grown from cold pressed GaN powder by sublimation in flowing ammonia. Optical transmission measurements indicated that the absorption coefficient for the transparent samples is 50 cm−1 in the wavelength region from 650 to 400 nm. Optical metastability in bulk GaN crystals was studied through time dependent photoluminescence both at room and liquid–nitrogen temperatures. The observation included decreasing output intensity of the ultraviolet emission attributed to the band edge and increasing output intensity of a new emission band centered at 378 nm at room temperature. At liquid–nitrogen temperature, the photoinduced emission band consisted of at least one LO-phonon replica of the zero-phonon line centered at 378 nm. The ratio of output intensities of the photoinduced band to the band edge increased by a factor of 10 during 27 min of exposure time. The photoinduced effect is attributed to the metastable nature of traps in bulk GaN.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Shmagin, IK and Muth, JF and Lee, JH and Kolbas, RM and Balkas, CM and Sitar, Z and Davis, RF}, year={1997}, month={Jul}, pages={455–457} }