@article{goeller_boyanov_sayers_nemanich_myers_steel_1999, title={Germanium segregation in the Co/SiGe/Si(001) thin film system}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0592}, abstractNote={Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the silicon–germanium alloy. The nature of the Ge segregation was studied by transmission electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. In the case of cobalt films deposited onto strained silicon–germanium films, the Ge segregation was discovered to be in the form of Ge-enriched Si1−xGex regions found at the surface of the film surrounding CoSi and CoSi2 grains. In the case of cobalt films deposited onto relaxed silicon–germanium films, the Ge segregation was dependent on formation of CoSi2. In samples annealed below 800 °C, where CoSi was the dominant silicide phase, the Ge segregation was similar in form to the strained Si1−xGex case. In samples annealed above 800 °C, where CoSi2 was the dominant silicide phase, the Ge segregation was also in the form of tetrahedron-shaped, Ge-enriched, silicon–germanium precipitates, which formed at the substrate/silicon– germanium film interface and grew into the Si substrate. A possible mechanism for the formation of these precipitates is presented based on vacancy generation during the silicidation reaction coupled with an increased driving force for Ge diffusion due to silicon depletion in the alloy layer.}, number={11}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Goeller, PT and Boyanov, BI and Sayers, DE and Nemanich, RJ and Myers, AF and Steel, EB}, year={1999}, month={Nov}, pages={4372–4384} }
 @article{park_camphausen_myers_barletta_sakhrani_bergman_nemanich_cuomo_1999, title={Raman scattering of tetrahedrally-bonded amorphous carbon deposited at oblique angles}, volume={41}, ISSN={["1873-4979"]}, DOI={10.1016/S0167-577X(99)00135-4}, abstractNote={Amorphous carbon (txa-C1−x) films were prepared by filtered cathodic arc deposition (FCAD). The films were deposited on p-type Si (111). The angle of beam incidence was varied from 0° to 75° with respect to the substrate normal. Micro-Raman spectroscopy, electron energy loss spectroscopy (EELS), and transmission electron microscopy (TEM) were carried out for sample analysis. It was found that the position of the G peak shifts to a higher wave number region as the angle of incidence increases. This means that the sp2/sp3 ratio increases with increasing angle. This conclusion is supported by EELS. The film deposited at an angle of 75° exhibits a columnar structure with alternating high and low carbon density regions.}, number={5}, journal={MATERIALS LETTERS}, author={Park, M and Camphausen, SM and Myers, AF and Barletta, PT and Sakhrani, V and Bergman, L and Nemanich, RJ and Cuomo, JJ}, year={1999}, month={Dec}, pages={229–233} }
 @article{ding_choi_myers_sharma_narayan_cuomo_hren_1997, title={Field emission enhancement from Mo tip emitters coated with N containing amorphous diamond films}, volume={94}, number={1-3}, journal={Surface & Coatings Technology}, author={Ding, M. Q. and Choi, W. B. and Myers, A. F. and Sharma, A. K. and Narayan, J. and Cuomo, J. J. and Hren, J. J.}, year={1997}, pages={672–675} }
 @article{ding_myers_choi_vispute_camphausen_narayan_cuomo_hren_bruley_1997, title={Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ding, M. Q. and Myers, A. F. and Choi, W. B. and Vispute, R. D. and Camphausen, S. M. and Narayan, J. and Cuomo, J. J. and Hren, J. J. and Bruley, J.}, year={1997}, pages={840–844} }