@article{fang_ozturk_pa o'neil_seebauer_2001, title={Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si}, volume={148}, ISSN={["0013-4651"]}, DOI={10.1149/1.1339236}, number={2}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Fang, H and Ozturk, MC and PA O'Neil and Seebauer, EG}, year={2001}, month={Feb}, pages={G43–G49} }
 @article{pa o'neil_ozturk_batchelor_xu_maher_1999, title={Effects of oxygen during selective silicon epitaxial growth using disilane and chlorine}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391938}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Xu, MM and Maher, DM}, year={1999}, month={Jun}, pages={2344–2352} }
 @article{pa o'neil_ozturk_batchelor_maher_1999, title={Effects of oxygen on selective silicon deposition using disilane}, volume={38}, ISSN={["0167-577X"]}, DOI={10.1016/S0167-577X(98)00200-6}, number={6}, journal={MATERIALS LETTERS}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Maher, DM}, year={1999}, month={Mar}, pages={418–422} }
 @article{pa o'neil_ozturk_batchelor_venables_xu_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392052}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Xu, MM and Maher, DM}, year={1999}, month={Aug}, pages={3070–3078} }
 @article{pa o'neil_ozturk_batchelor_venables_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392053}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Maher, DM}, year={1999}, month={Aug}, pages={3079–3086} }
 @article{pa o'neil_ozturk_batchelor_xu_maher_1999, title={Quality of selective silicon epitaxial films deposited using disilane and chlorine}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391937}, number={6}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Xu, MM and Maher, DM}, year={1999}, month={Jun}, pages={2337–2343} }
 @inproceedings{srivastava_sun_bellur_bartholomew_o'neil_celik_osburn_masnari_ozturk_westhoff_et al._1997, title={A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy}, booktitle={ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3)}, publisher={Pennington, NJ: Electrochemical Society}, author={Srivastava, A. and Sun, J. and Bellur, K. and Bartholomew, R. F. and O'Neil, P. and Celik, S. M. and Osburn, C. M. and Masnari, N. A. and Ozturk, M. C. and Westhoff, R. and et al.}, year={1997}, pages={571–585} }
 @article{oneil_ozturk_violette_batchelor_christensen_maher_1997, title={Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1838003}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={ONeil, PA and Ozturk, MC and Violette, KE and Batchelor, D and Christensen, K and Maher, DM}, year={1997}, month={Sep}, pages={3309–3315} }
 @article{sun_bartholomew_bellur_oneil_srivastava_violette_ozturk_osburn_masnari_1996, title={Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition}, volume={429}, ISBN={["1-55899-332-0"]}, ISSN={["0272-9172"]}, DOI={10.1557/proc-429-343}, journal={RAPID THERMAL AND INTEGRATED PROCESSING V}, author={Sun, J and Bartholomew, RF and Bellur, K and ONeil, PA and Srivastava, A and Violette, KE and Ozturk, MC and Osburn, CM and Masnari, NA}, year={1996}, pages={343–347} }