William G. Perry

Bidnyk, S., Little, B. D., Schmidt, T. J., Cho, Y. H., Krasinski, J., Song, J. J., … Davis, R. F. (1999). Stimulated emission in GaN thin films in the temperature range of 300-700 K. JOURNAL OF APPLIED PHYSICS, 85(3), 1792–1795. https://doi.org/10.1063/1.369325

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232. https://doi.org/10.1007/s11664-998-0392-9

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245. https://doi.org/10.1007/s11664-998-0394-7

Perry, W. G., Bremser, M. B., Zheleva, T., Linthicum, K. J., & Davis, R. F. (1998). Biaxial strain in AlxGa1-xN/GaN layers deposited on 6H-SiC. THIN SOLID FILMS, 324(1-2), 107–114. https://doi.org/10.1016/S0040-6090(97)01217-0

Perry, W. G., Bremser, M. B., & Davis, R. F. (1998). Cathodoluminescence studies of the deep level emission bands of AlxGa1-xN films deposited on 6H-SiC(0001). JOURNAL OF APPLIED PHYSICS, 83(1), 469–475. https://doi.org/10.1063/1.366716

Shan, W., Fischer, A. J., Hwang, S. J., Little, B. D., Hauenstein, R. J., Xie, X. C., … Davis, R. F. (1998). Intrinsic exciton transitions in GaN. JOURNAL OF APPLIED PHYSICS, 83(1), 455–461. https://doi.org/10.1063/1.366660

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9

Davis, R. F., Bremser, M. D., Perry, W. G., & Ailey, K. S. (1997). Growth of AlN, GaN and AlxGa1-xN thin films on vicinal and on-axis 6H-SiC(0001) substrates. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol. 17, pp. 1775–1779. https://doi.org/10.1016/S0955-2219(97)00077-0

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7

Bergman, L., Bremser, M. D., Perry, W. G., Davis, R. F., Dutta, M., & Nemanich, R. J. (1997). Raman analysis of the configurational disorder in AlxGa1-xN films. APPLIED PHYSICS LETTERS, 71(15), 2157–2159. https://doi.org/10.1063/1.119367