@misc{piner_rajagopal_roberts_linthicum_2008, title={Gallium nitride material structures including substrates and methods associated with the same}, volume={7,365,374}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Piner, E. L. and Rajagopal, P. and Roberts, J. C. and Linthicum, K. J.}, year={2008} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @misc{johnson_piner_linthicum_2008, title={Semiconductor device-based sensors}, volume={7,361,946}, number={2008 Apr. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Johnson, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2008, title={Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate}, volume={92}, number={2}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2007, title={Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate}, volume={90}, number={15}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2007} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2006, title={Gallium nitride material transistors and methods associated with the same}, volume={7,135,720}, number={2006 Nov. 14}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2006} }
 @misc{weeks_piner_borges_linthicum_2003, title={Gallium nitride material devices and methods including backside vias}, volume={6,611,002}, number={2003 Aug. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Borges, R. M. and Linthicum, K. J.}, year={2003} }
 @misc{weeks_piner_gehrke_linthicum_2003, title={Gallium nitride materials and methods}, volume={6,649,287}, number={2003 Nov. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Gehrke, T. and Linthicum, K. J.}, year={2003} }
 @article{liliental-weber_benamara_washburn_domagala_bak-misiuk_piner_roberts_bedair_2001, title={Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies}, volume={30}, DOI={10.1007/s11664-001-0056-5}, number={4}, journal={Journal of Electronic Materials}, author={Liliental-Weber, Z. and Benamara, M. and Washburn, J. and Domagala, J. Z. and Bak-Misiuk, J. and Piner, E. L. and Roberts, J. C. and Bedair, S. M.}, year={2001}, pages={439–444} }
 @article{joshkin_parker_bedair_muth_shmagin_kolbas_piner_molnar_1999, title={Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy}, volume={86}, DOI={10.1063/1.370727}, number={1}, journal={Journal of Applied Physics}, author={Joshkin, V. A. and Parker, C. A. and Bedair, S. M. and Muth, J. F. and Shmagin, I. K. and Kolbas, R. M. and Piner, E. L. and Molnar, R. J.}, year={1999}, pages={281–288} }
 @article{robins_paul_parker_roberts_bedair_piner_el-masry_1999, title={Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films}, volume={4S1}, DOI={10.1557/s1092578300002490}, number={G3.22}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Robins, L. H. and Paul, A. J. and Parker, C. A. and Roberts, J. C. and Bedair, S. M. and Piner, E. L. and El-Masry, N. A.}, year={1999} }
 @article{behbehani_piner_liu_el-masry_bedair_1999, title={Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition}, volume={75}, DOI={10.1063/1.124964}, number={15}, journal={Applied Physics Letters}, author={Behbehani, M. K. and Piner, E. L. and Liu, S. X. and El-Masry, N. A. and Bedair, S. M.}, year={1999}, pages={2202–2204} }
 @article{elmasry_piner_liu_bedair_1998, title={Phase separation in InGaN grown by metalorganic chemical vapor deposition}, volume={72}, DOI={10.1063/1.120639}, number={1}, journal={Applied Physics Letters}, author={ElMasry, N. A. and Piner, E. L. and Liu, S. X. and Bedair, S. M.}, year={1998}, pages={40–42} }
 @article{piner_behbehani_el-masry_mcintosh_roberts_boutros_bedair_1997, title={Effect of hydrogen on the indium incorporation in ingan epitaxial films}, volume={70}, DOI={10.1063/1.118181}, number={4}, journal={Applied Physics Letters}, author={Piner, E. L. and Behbehani, M. K. and El-Masry, N. A. and McIntosh, F. G. and Roberts, J. C. and Boutros, K. S. and Bedair, S. M.}, year={1997}, pages={461–463} }
 @article{bedair_mcintosh_roberts_piner_boutros_a._1997, title={Growth and characterization of in-based nitride compounds}, volume={178}, DOI={10.1016/S0022-0248(97)00069-9}, number={1-2}, journal={Journal of Crystal Growth}, author={Bedair, S. M. and McIntosh, F. G. and Roberts, J. C. and Piner, E. L. and Boutros, K. S. and A., El-Masry N.}, year={1997}, pages={32–44} }
 @article{piner_behbehani_el-masry_roberts_mcintosh_bedair_1997, title={Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films}, volume={71}, DOI={10.1063/1.119775}, number={14}, journal={Applied Physics Letters}, author={Piner, E. L. and Behbehani, M. K. and El-Masry, N. A. and Roberts, J. C. and McIntosh, F. G. and Bedair, S. M.}, year={1997}, pages={2023–2025} }
 @article{joshkin_roberts_mcintosh_bedair_piner_behbehani_1997, title={Optical memory effect in GaN epitaxial films}, volume={71}, DOI={10.1063/1.120414}, number={2}, journal={Applied Physics Letters}, author={Joshkin, V. A. and Roberts, J. C. and McIntosh, F. G. and Bedair, S. M. and Piner, E. L. and Behbehani, M. K.}, year={1997}, pages={234–236} }
 @article{zeng_smith_lin_jiang_roberts_piner_mcintosh_1997, title={Optical transitions in InGaN/AlGaN single quantum wells}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Zeng, K. C. and Smith, M. and Lin, J. Y. and Jiang, H. X. and Roberts, John C. and Piner, E. L. and McIntosh, F. G.}, year={1997}, month={Jul}, pages={1139–1143} }