Zbigniew J. Radzimski

Kirk, H. R., Radzimski, Z., Romanowski, A., & Rozgonyi, G. A. (1999). Bias dependent contrast mechanisms in EBIC images of MOS capacitors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535. https://doi.org/10.1149/1.1391799

Radzimski, Z. J., Posadowski, W. M., Rossnagel, S. M., & Shingubara, S. (1998). Directional copper deposition using dc magnetron self-sputtering. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(3), 1102–1106.

Tamatsuka, M., Radzimski, Z., Rozgonyi, G. A., Oka, S., Kato, M., & Kitagawara, Y. (1998, March). Medium field breakdown origin on metal oxide semiconductor capacitor containing grown-in Czochralski silicon crystal defects. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, Vol. 37, pp. 1236–1239. https://doi.org/10.1143/JJAP.37.1236

Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997). Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881. https://doi.org/10.1149/1.1837910

Brown, R. A., Kononchuk, O., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, May). The effect of oxygen on secondary defect formation in MeV self-implanted silicon. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol. 127, pp. 55–58. https://doi.org/10.1016/S0168-583X(96)00848-8