Krzysztof Rapcewicz

Works (9)

Updated: March 10th, 2025 12:14

2000 article

Ab initiophonon dispersions of wurtzite AlN, GaN, and InN

Bungaro, C., Rapcewicz, K., & Bernholc, J. (2000, March 1). Physical Review. B, Condensed Matter, Vol. 61, pp. 6720–6725.

By: C. Bungaro n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Thermal properties of materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 article

Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes, and Quantum Transport

Bernholc, J., Briggs, E. L., Bungaro, C., Nardelli, M. B., Fattebert, J.-L., Rapcewicz, K., … Zhao, Q. (2000, January 1). Physica Status Solidi (b), Vol. 217, pp. 685–701.

By: J. Bernholc n , E. Briggs n, C. Bungaro n, M. Nardelli n, J. Fattebert n, K. Rapcewicz n, C. Roland n , W. Schmidt n, Q. Zhao n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Graphene research and applications; Advancements in Semiconductor Devices and Circuit Design
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 article

Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems

Bogusławski, P., Rapcewicz, K., & Bernholc, J. J. (2000, April 15). Physical Review. B, Condensed Matter, Vol. 61, pp. 10820–10826.

By: P. Bogusławski n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 article

Surface sensitivity of impurity incorporation: Mg at GaN (0001) surfaces

Bungaro, C., Rapcewicz, K., & Bernholc, J. (1999, April 15). Physical Review. B, Condensed Matter, Vol. 59, pp. 9771–9774.

By: C. Bungaro n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Plasma Diagnostics and Applications
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 article

Consistent methodology for calculating surface and interface energies

Rapcewicz, K., Chen, B., Yakobson, B., & Bernholc, J. (1998, March 15). Physical Review. B, Condensed Matter, Vol. 57, pp. 7281–7291.

By: K. Rapcewicz n, B. Chen  n, B. Yakobson n & J. Bernholc n 

topics (OpenAlex): Chemical and Physical Properties of Materials; Graphene research and applications; Advanced Chemical Physics Studies
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7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 article

Polarization field effects on the electron-hole recombination dynamics in In0.2Ga0.8N/In1−xGaxN multiple quantum wells

Nardelli, M. B., Rapcewicz, K., & Bernholc, J. (1997, November 24). Applied Physics Letters, Vol. 71, pp. 3135–3137.

By: M. Nardelli n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1997 article

Real-space multigrid methods for large-scale electronic structure problems

Bernholc, J., Briggs, E. L., Sullivan, D. J., Brabec, C. J., Nardelli, M. B., Rapcewicz, K., … Wensell, M. (1997, January 1). International Journal of Quantum Chemistry, Vol. 65, pp. 531–543.

By: J. Bernholc n , E. Briggs n, D. Sullivan n, C. Brabec n, M. Nardelli n, K. Rapcewicz n, C. Roland n , M. Wensell n

topics (OpenAlex): Advanced Chemical Physics Studies; Advanced Data Storage Technologies; Physics of Superconductivity and Magnetism
TL;DR: The development and applications of a new electronic structure method that uses a real-space grid as a basis and new compact discretization schemes in real space for systems with cubic, orthorhombic, and hexagonal symmetry are described. (via Semantic Scholar)
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Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1997 article

Strain effects on the interface properties of nitride semiconductors

Nardelli, M. B., Rapcewicz, K., & Bernholc, J. (1997, March 15). Physical Review. B, Condensed Matter, Vol. 55, pp. R7323–7326.

By: M. Nardelli n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Acoustic Wave Resonator Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 article

Theory of interfaces and surfaces in wide-gap nitrides

Nardelli, M. B., Rapcewicz, K., & Bernholc, J. (1997, July 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, Vol. 15, pp. 1144–1147.

By: M. Nardelli n, K. Rapcewicz n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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