John C. Roberts

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Effect of H2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1−yNy (0⩽y⩽0.08)

Moody, B. F., Barletta, P. T., El-Masry, N. A., Roberts, J. C., Aumer, M. E., LeBoeuf, S. F., & Bedair, S. M. (2002, April 8). Applied Physics Letters.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April 1). Journal of Electronic Materials.

Room temperature ferromagnetic properties of (Ga, Mn)N

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001, November 19). Applied Physics Letters.

Self-assembled AlInGaN quaternary superlattice structures

El-Masry, N. A., Behbehani, M. K., LeBoeuf, S. F., Aumer, M. E., Roberts, J. C., & Bedair, S. M. (2001, September 10). Applied Physics Letters.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000, December 18). Applied Physics Letters.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000, April 3). Applied Physics Letters.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

Reed, M. L., Liu, S. X., Roberts, J. C., Stadelmaier, H. H., Bedair, S. M., & El-Masry, N. A. (2000, August 1). Journal of Magnetism and Magnetic Materials.

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999, November 1). Applied Physics Letters.

Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Robins, L. H., Paul, A. J., Parker, C. A., Roberts, J. C., Bedair, S. M., Piner, E. L., & El-Masry, N. A. (1999, January 1). MRS Internet Journal of Nitride Semiconductor Research.

Optical band gap dependence on composition and thickness of InxGa1−xN (0&lt;x&lt;0.25) grown on GaN

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999, October 25). Applied Physics Letters.

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., McIntosh, F. G., Roberts, J. C., Boutros, K. S., & Bedair, S. M. (1997, January 27). Applied Physics Letters.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., El-Masry, N. A., & Bedair, S. M. (1997, March 1). Applied Surface Science.

Growth and characterization of In-based nitride compounds

Bedair, S. M., McIntosh, F. G., Roberts, J. C., Piner, E. L., Boutros, K. S., & El-Masry, N. A. (1997, June 1). Journal of Crystal Growth.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Piner, E. L., Behbehani, M. K., El-Masry, N. A., Roberts, J. C., McIntosh, F. G., & Bedair, S. M. (1997, October 6). Applied Physics Letters.

Optical memory effect in GaN epitaxial films

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997, July 14). Applied Physics Letters.

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.