John C. Roberts

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.