Works (24)

2008 patent

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: E. Piner, P. Rajagopal, J. Roberts & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

By: F. Al-Ajmi, R. Kolbas, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

Applied Physics Letters, 80(14), 2475–2477.

Source: NC State University Libraries
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Journal of Electronic Materials, 30(4), 439–444.

By: Z. Liliental-Weber, M. Benamara, J. Washburn, J. Domagala, J. Bak-Misiuk, E. Piner, J. Roberts, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

Applied Physics Letters, 79(21), 3473–3475.

By: M. Reed, N. El-Masry, H. Stadelmaier, M. Ritums, M. Reed, C. Parker, J. Roberts, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

Applied Physics Letters, 79(11), 1616–1618.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed, N. El-Masry, C. Parker, J. Roberts & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

Applied Physics Letters, 76(14), 1935–1937.

By: M. Hunter, M. Reed, N. El-Masry, J. Roberts & S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

Journal of Magnetism and Magnetic Materials, 218(2/3), 177–181.

By: M. Reed, S. Liu, J. Roberts, H. Stadelmaier, S. Bedair & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

Applied Physics Letters, 75(18), 2776–2778.

By: C. Parker, J. Roberts, S. Bedair, M. Reed, S. Liu & N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins, A. Paul, C. Parker, J. Roberts, S. Bedair, E. Piner, N. El-Masry

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. Applied Physics Letters, 75(17), 2566–2568.

By: C. Parker, J. Roberts, S. Bedair, M. Reed, S. Liu, N. El-Masry, L. Robins

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in ingan epitaxial films

Applied Physics Letters, 70(4), 461–463.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Epitaxial deposition of gainn and inn using the rotating susceptor ale system

Applied Surface Science, 112(1997 Mar.), 98–101.

By: F. McIntosh, E. Piner, J. Roberts, M. Behbehani, M. Aumer, N. El-Masry, S. Bedair

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth and characterization of in-based nitride compounds

Journal of Crystal Growth, 178(1-2), 32–44.

By: S. Bedair, F. McIntosh, J. Roberts, E. Piner, K. Boutros & E. A.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

Applied Physics Letters, 71(14), 2023–2025.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

Applied Physics Letters, 71(2), 234–236.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018