Works (23)

Updated: July 5th, 2023 16:04

2008 patent

Gallium nitride material structures including substrates and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: E. Piner, P. Rajagopal, J. Roberts & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate

Applied Physics Letters, 92(2).

By: F. Al-Ajmi, R. Kolbas, J. Roberts, P. Rajagopal, J. Cook, E. Piner, K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate

Applied Physics Letters, 90(15).

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of H-2 on nitrogen incorporation in the metalorganic chemical vapor deposition of GaAs1-yNy (0 <= y <= 0.08)

APPLIED PHYSICS LETTERS, 80(14), 2475–2477.

By: B. Moody n, P. Barletta n, N. El-Masry n, J. Roberts n, M. Aumer n, S. LeBoeuf n, S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Source: NC State University Libraries
Added: August 6, 2018

2001 article

Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies

Liliental-Weber, Z., Benamara, M., Washburn, J., Domagala, J. Z., Bak-Misiuk, J., Piner, E. L., … Bedair, S. M. (2001, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 30, pp. 439–444.

By: Z. Liliental-Weber, M. Benamara*, J. Washburn*, J. Domagala*, J. Bak-Misiuk*, E. Piner n, J. Roberts n, S. Bedair n

co-author countries: Poland 🇵🇱
author keywords: InGaN; strained layer; relaxed layer; planar defects; TEM; x-rays
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Self-assembled AlInGaN quaternary superlattice structures

APPLIED PHYSICS LETTERS, 79(11), 1616–1618.

By: N. El-Masry n, M. Behbehani n, S. LeBoeuf n, M. Aumer n, J. Roberts n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed n, N. El-Masry n, C. Parker n, J. Roberts n & S. Bedair n

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

By: M. Hunter n, M. Reed n, N. El-Masry n, J. Roberts n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 218(2-3), 177–181.

By: M. Reed n, S. Liu n, J. Roberts n, H. Stadelmaier n, S. Bedair n & N. El-Masry n

author keywords: MnSb; multilayers; planar Hall effect; GaAs; ferromagnetic
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n & N. El-Masry n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.22).

By: L. Robins*, A. Paul*, C. Parker n, J. Roberts n, S. Bedair n, E. Piner n, N. El-Masry n

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins*

Source: Web Of Science
Added: August 6, 2018

1998 patent

Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flow

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

APPLIED PHYSICS LETTERS, 70(4), 461–463.

By: E. Piner n, M. Behbehani n, N. ElMasry n, F. McIntosh n, J. Roberts n, K. Boutros n, S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1997 article

Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system

McIntosh, F. G., Piner, E. L., Roberts, J. C., Behbehani, M. K., Aumer, M. E., ElMasry, N. A., & Bedair, S. M. (1997, March). APPLIED SURFACE SCIENCE, Vol. 112, pp. 98–101.

By: F. McIntosh*, E. Piner, J. Roberts*, M. Behbehani*, M. Aumer*, N. ElMasry, S. Bedair*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Growth and characterization of In-based nitride compounds

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 32–44.

By: S. Bedair n, F. McIntosh n, J. Roberts n, E. Piner n, K. Boutros* & N. ElMasry n

author keywords: InGaN; ALE; MOCVD; quantum wells; growth model
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Impurity dependence on hydrogen and ammonia flow rates in InGaN bulk films

APPLIED PHYSICS LETTERS, 71(14), 2023–2025.

By: E. Piner n, M. Behbehani n, N. ElMasry n, J. Roberts n, F. McIntosh n & S. Bedair n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical transitions in InGaN/AlGaN single quantum wells

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1139–1143.

By: K. Zeng, M. Smith, J. Lin, H. Jiang, J. Roberts, E. Piner, F. McIntosh

Source: NC State University Libraries
Added: August 6, 2018

1997 patent

Stacked quantum well aluminum indium gallium nitride light emitting diodes

Washington, DC: U.S. Patent and Trademark Office.

By: F. McIntosh, S. Bedair, N. El-Masry & J. Roberts

Source: NC State University Libraries
Added: August 6, 2018

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