@article{kirk_radzimski_romanowski_rozgonyi_1999, title={Bias dependent contrast mechanisms in EBIC images of MOS capacitors}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391799}, abstractNote={Defects and inhomogeneities in the electrical properties of metal oxide silicon capacitors are analyzed by scanning electron microscopy, using the electron beam induced current technique (MOS/EBIC). All capacitors were analyzed in their as-fabricated or prebreakdown condition. The collected signals and image contrast are found to be highly dependent on the gate-to-substrate bias applied during MOS/EBIC examination, and this bias-dependence is shown to be correlated with the nature and physical location of the defect. Specific MOS defects were selected for this study according to their position in the substrate, in the oxide, or at the Si/SiO 2 interface. Substrate defects examined were misfit dislocations in epitaxial Si(Ge) on Si. Interfacial inhomogeneities included thermally oxidized, reactive ion etched (RIE) Si surfaces, and SiO 2 precipitates or D-defects which extend to meet the Si surface. Oxide layer inhomogeneities were also detectable which exhibited a strong contrast dependence on the oxide electric field strength.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Kirk, HR and Radzimski, Z and Romanowski, A and Rozgonyi, GA}, year={1999}, month={Apr}, pages={1529–1535} }
 @article{ono_romanowski_asayama_horie_sueoka_tsuya_rozgonyi_1999, title={Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392496}, abstractNote={Dislocation generation associated with oxide precipitates in heavily boron-doped Czochralski silicon wafers with resistivities of 9, 18, and 40 mΩ cm has been studied following prolonged isothermal annealing from 800 to 1000°C. Transmission electron microscopy observations revealed (i) the critical precipitate size for punched-out dislocations to form in 9 and 18 mΩ cm wafers was smaller than 40 nm in 9 and 18 mΩ cm wafers, while larger than 55 nm in 40 mΩ cm samples; (ii) the precipitate density was higher than 10 12 cm -3 in 9 and 18 mΩ cm wafers, and below 10 11 cm -3 in 40 mΩ cm wafers annealed at 800 and 900°C, respectively. The strain around a precipitate was estimated and it was concluded that the higher supersaturation of silicon interstitials in the 9 and 18 mΩ cm wafers was due to the higher precipitate density, which in turn was likely to be the main cause of the reduction in critical precipitate size.}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Ono, T and Romanowski, A and Asayama, E and Horie, H and Sueoka, K and Tsuya, H and Rozgonyi, GA}, year={1999}, month={Sep}, pages={3461–3465} }
 @article{romanowski_rozgonyi_tamatsuka_1999, title={Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers}, volume={85}, ISSN={["0021-8979"]}, DOI={10.1063/1.370144}, abstractNote={The kinetics for dissolution/growth of defects in Czochralski silicon wafers during a 1 h high temperature annealing at 1100 °C has been investigated. The size and distribution of point defects such as vacancy, self-interstitial and oxygen interstitial, are simulated for oxygen and hydrogen ambient annealing. The boundary conditions are analyzed separately for hydrogen and oxygen annealing. A deterministic homogeneous model is used for describing the defect kinetics. The self-interstitial injection rate during oxide annealing is calculated from the Deal-Grove model. Simulated void and oxygen size distributions are compared to B- and C-mode capacitor failure distribution functions. Experimental and theoretical data show that voids can be dissolved during either oxygen or hydrogen annealing, while oxygen precipitates are dissolved during hydrogen annealing and only partially dissolved during oxygen annealing.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Romanowski, A and Rozgonyi, G and Tamatsuka, M}, year={1999}, month={May}, pages={6408–6414} }
 @article{romanowski_buczkowski_karoui_rozgonyi_1998, title={Frequency-resolved microwave reflection photoconductance}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.367946}, abstractNote={The effect of the carrier recombination process in silicon on the microwave reflection coefficient is analyzed in the frequency domain. The process is described using a two level recombination/trapping model. Carrier recombination kinetics are characterized by four parameters, two of which are related to the recombination and the other to the trapping processes. These parameters are evaluated for Czochralski silicon wafers based on Nyquist plots. In the evaluation procedure, a nonlinear simplex method is used for fitting the experimental data to the model.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Romanowski, A and Buczkowski, A and Karoui, A and Rozgonyi, GA}, year={1998}, month={Jun}, pages={7730–7735} }
 @article{brown_kononchuk_bondarenko_romanowski_radzimski_rozgonyi_gonzalez_1997, title={Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1837910}, abstractNote={Megaelectron volt (MeV) self-implantation has been investigated as a means of producing buried defect layers for gettering metallic impurities in Czochralski (CZ) and float-zone (FZ) silicon. The properties of implanted and annealed wafers were studied by generation lifetime (Zerbst) analysis of transient capacitance data, capacitance-voltage measurements, deep-level transient spectroscopy, scanning electron-beam-induced current microscopy, transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that metallic contaminants such as Fe and Cu were effectively gettered to buried extended defect layers formed by implantation of ion fluences ≤1 x 10 15 Si cm -2 . For example, the concentration of iron in regions near the buried defects can be reduced to below 10 10 cm -3 in samples annealed at 900°C. The region above the damage layer appears to be free of electrically active defects, having very high generation lifetime values, and is therefore suitable for device processing. However, the structure and width of the buried defect band is sensitive to the implanted ion fluence and the oxygen content of the wafers. For example, the defect layers formed by high ion fluences (∼10 15 cm -2 ) are wider in FZ wafers than in CZ wafers. For fluences 1 x 10 14 cm 2 , dislocations extend from the buried damage band in both directions during annealing and are observed at depths up to 10 μm. These dislocations intersect the wafer surface in both CZ and FZ wafers, making fluences lower than ≃ 5 x 10 14 cm -2 unsuitable for device fabrication.}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Brown, RA and Kononchuk, O and Bondarenko, I and Romanowski, A and Radzimski, Z and Rozgonyi, GA and Gonzalez, F}, year={1997}, month={Aug}, pages={2872–2881} }