@article{dhawan_muth_leonard_gerhold_gleeson_vo-dinh_russell_2008, title={Focused in beam fabrication of metallic nanostructures on end faces of optical fibers for chemical sensing applications}, volume={26}, ISSN={["1071-1023"]}, DOI={10.1116/1.3013329}, abstractNote={Focused ion beam (FIB) fabrication of fiber optic sensors, mainly chemical sensors, which are based on plasmonics-active nanostructures formed on the cleaved tips of optical fibers, is reported. The nanostructures fabricated included nanoholes in optically thick metallic films as well as metallic nanopillars and nanorods. The sensing mechanism is based on detecting shifts in surface plasmon resonances (SPRs) associated with nanoholes in metallic films and localized SPRs of metallic nanopillars and nanorods, when the refractive index of the medium surrounding the nanostructures is changed. These sensors can be employed for the detection of chemical agents in air as well as liquid media surrounding the sensors. FIB milling was employed to fabricate ordered arrays of nanoholes in optically thick (100–240nm) metallic films deposited on cleaved end faces of multimode, four-mode, and single-mode optical fibers. Separately, metallic nanorods and nanopillars were formed by first depositing a metallic (gold or silver) film on tips of optical fibers, which was followed by FIB milling large area patterns to form freestanding nanorods and nanopillars. Utilizing FIB allows engineering nanostructure geometries, i.e., nanostructure shapes and sizes that are chosen based on the plasmon resonances associated with them. Formation of periodic arrays of nanoholes provides a means of tuning plasmon resonance peaks, associated with extraordinary transmission of light through the array of nanoholes in the metallic films, based on periodicity and shape of the nanoholes as well as on refractive index changes to form sensitive chemical sensors.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Dhawan, A. and Muth, J. F. and Leonard, D. N. and Gerhold, M. D. and Gleeson, J. and Vo-Dinh, T. and Russell, P. E.}, year={2008}, month={Nov}, pages={2168–2173} }
 @article{parish_russell_2007, title={Scanning cathodoluminescence microscopy}, volume={147}, journal={Advances in imaging and electron physics, vol 147}, author={Parish, C. M. and Russell, P. E.}, year={2007}, pages={1–135} }
 @article{parish_russell_2006, title={On the use of Monte Carlo modeling in the mathematical analysis of scanning electron microscopy-electron beam induced current data}, volume={89}, number={19}, journal={Applied Physics Letters}, author={Parish, C. M. and Russell, P. E.}, year={2006} }
 @article{bunker_garcia_russell_2005, title={Scanning electron microscopy cathodoluminescence studies of piezoelectric fields in an InGaN/GaN quantum-well light-emitting diode}, volume={86}, ISSN={["1077-3118"]}, DOI={10.1063/1.1868886}, abstractNote={Scanning electron microscopy (SEM) cathodoluminescence (CL) experiments were used to determine the existence and direction of piezoelectric fields in a commercial InGaN multiple-quantum-well (MQW) light-emitting diode (LED). The CL emission peak showed a blueshift with increasing reverse bias due to the cancellation of the piezoelectric field. A full compensation of the piezoelectric field was observed followed by a redshift with a further increase of reverse bias, indicating that flat-band conditions had been reached. We determined the piezoelectric field points in the [000-1] direction and estimated the magnitude to be approximately 1MV∕cm. SEM-CL carrier generation density variation and electroluminescence experiments were also used to confirm the existence of a piezoelectric field in the InGaN MQW LED.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Bunker, KL and Garcia, R and Russell, PE}, year={2005}, month={Feb} }
 @article{mosselveld_makarov_lundquist_griffis_russell_2004, title={Circuit editing of copper and low-k dielectrics in nanotechnology devices}, volume={214}, ISSN={["1365-2818"]}, DOI={10.1111/j.0022-2720.2004.01337.x}, abstractNote={Summary}, journal={JOURNAL OF MICROSCOPY}, author={Mosselveld, F and Makarov, VV and Lundquist, TR and Griffis, DP and Russell, PE}, year={2004}, month={Jun}, pages={246–251} }
 @article{edmond_abare_bergman_bharathan_bunker_emerson_haberern_ibbetson_leung_russell_et al._2004, title={High efficiency GaN-based LEDs and lasers on SiC}, volume={272}, number={04-Jan}, journal={Journal of Crystal Growth}, author={Edmond, J. and Abare, A. and Bergman, M. and Bharathan, J. and Bunker, K. L. and Emerson, D. and Haberern, K. and Ibbetson, J. and Leung, M. and Russell, P. and et al.}, year={2004}, pages={242–250} }
 @misc{russell_griffis_gonzales perez_2003, title={Chemically enhanced focused ion beam micro-machining of copper}, volume={6,645,872}, number={2003 Nov. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Russell, P. E. and Griffis, D. P. and Gonzales Perez, J. C.}, year={2003} }
 @article{bender_salmon_russell_2003, title={Combined atomic force microscopy and scanning tunneling microscopy imaging of cross-sectioned GaN light-emitting diodes}, volume={25}, number={1}, journal={Scanning}, author={Bender, J. W. and Salmon, M. E. and Russell, P. E.}, year={2003}, pages={45–51} }
 @article{silva_gonzalez_russell_2003, title={Cross-sectional Scanning Probe Microscopy of GaN-based p-n heterostructures}, volume={34}, ISSN={["0026-2692"]}, DOI={10.1016/S0026-2692(03)00051-X}, abstractNote={In this work, the structural and electrical properties of a GaN-based p–n heterostructure are studied using cross-sectional Atomic Force Microscopy, Friction Force Microscopy, Electrical Force Gradient Microscopy, and Surface Potential Microscopy. Using Atomic Force Microscopy and Friction Force Microscopy, we were able to identify and measure the thickness of the layers present in the heterostructures. The electrical conductivity type of the different layers as well as the p–n junction, and piezoelectric fields were identified and studied using Electric Force Gradient Microscopy and Surface Potential Microscopy.}, number={5-8}, journal={MICROELECTRONICS JOURNAL}, author={Silva, MIN and Gonzalez, JC and Russell, PE}, year={2003}, pages={571–573} }
 @article{gonzalez_silva_bunker_batchelor_russell_2003, title={Electrical characterization of InGaN quantum well p-n heterostructures}, volume={34}, ISSN={["0026-2692"]}, DOI={10.1016/S0026-2692(03)00072-7}, abstractNote={In this work, two methods for electrical characterization of InGaN quantum well p–n heterostructures at the nanometer level are presented. Cross-sectional Electrical Force Microscopy and High Resolution Electron Beam Induced Current (HR-EBIC) are used to study and identify regions of the cross-sectional surface of InGaN heterostructures with different types of electrical conductivity, the location of the InGaN quantum well, the location of the p–n junction, and the depletion layer. HR-EBIC was implemented in a Scanning Transmission Electron Microscope to take advantage of the high resolution chemical imaging capabilities of this microscope, such as Z-Contrast and Energy Dispersive X-ray Spectroscopy, and the small spread of the high energy electron beam in the electron transparent thin sample that allows electron beam induced current imaging with nanometer resolution.}, number={5-8}, journal={MICROELECTRONICS JOURNAL}, author={Gonzalez, JC and Silva, MIN and Bunker, KL and Batchelor, AD and Russell, PE}, year={2003}, pages={455–457} }
 @article{wang_griffis_garcia_russell_2003, title={Etching characteristics of chromium thin films by an electron beam induced surface reaction}, volume={18}, ISSN={["0268-1242"]}, DOI={10.1088/0268-1242/18/4/302}, abstractNote={In this paper, we demonstrate the etching of chromium (Cr) film on quartz through a surface reaction induced by an electron beam and enhanced with XeF2 gas. We have studied the influences of the electron beam energy, the gas flow rate and the specimen composition on the etch rate. The electron beam energy has significant influence on the etch rate. The etch rate made by an electron beam of 20 keV is five times higher compared to that made by a beam of 10 keV. The XeF2 gas flow rate shows little effect on the etch rate when the gas pressure is higher than 2 × 10−6 Torr. The structure and grain size of the Cr film did not show any apparent change under exposure to XeF2 or when irradiated by an electron beam, while the composition of Cr has a significant effect on the etch process. The material removal of Cr induced by an electron beam means that it can be applied to the direct fabrication of microstructures on Cr films and that it solves the contamination problem in Cr mask repair.}, number={4}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, author={Wang, JH and Griffis, DP and Garcia, R and Russell, PE}, year={2003}, month={Apr}, pages={199–205} }
 @article{gonzalez_silva_griffis_russell_2002, title={Improvements in focused ion beam micromachining of interconnect materials}, volume={20}, ISSN={["2166-2746"]}, DOI={10.1116/1.1515310}, abstractNote={Focused ion beam micromachining (FIBM) of integrated circuits continues to be an important tool for design debug, editing, and verification; for metrology; and for process control. FIBM of copper interconnects has presented challenges not faced when micromachining aluminum interconnects and the introduction of low-k dielectrics present additional challenges. A new approach to chemically assisted FIBM of thin film Cu, SiO2, and SiLK low-k material using polar precursor molecules has been investigated. Polar alcohols were used to reduce the sputter rate of SiO2 and SiLK while having a minimal effect on the Cu sputter rate. A new FIBM process based on the reduction of the FIB Ga+ energy from the typical 25 to 15 keV is also introduced. The new low energy FIBM process was shown to increase the sputter rate of polycrystalline Cu with strong (111) crystallographic texture by a factor of 2.5. This increase in the sputter rate of Cu combined with a slight reduction of the sputter rate of SiO2 and SiLK results in a Cu/SiO2 selectivity of greater than 7 and a Cu/SiLK selectivity of approximately 3. These are the largest selectivity values reported until now for both systems. The Onderdelinden theory of single-crystal sputtering was used to explain this seemingly anomalous increase of the Cu sputter rate with the reduction of the FIB Ga+ energy.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Gonzalez, JC and Silva, MIN and Griffis, DP and Russell, PE}, year={2002}, pages={2700–2704} }
 @article{leonard_russell_smith_spontak_2002, title={Multiscale dewetting of low-molecular-weight block copolymer ultrathin films}, volume={23}, ISSN={["1022-1336"]}, DOI={10.1002/1521-3927(20020201)23:3<205::AID-MARC205>3.0.CO;2-X}, abstractNote={Ultrathin films of a low-molecular-weight block copolymer spontaneously dewet after several days at ambient temperature. Film rupture produces macroscopic holes and a residual pancake brush layer ≈ 2 nm thick with intermittent mounds measuring up to 25 nm in thickness. Multiscale dewetting likewise occurs when the films are heated and returned to ambient temperature. Regardless of the surface pattern that forms during heating, submicron mounds develop on the dewetted copolymer film, and fine holes emerge along the substrate surface, after cooling.}, number={3}, journal={MACROMOLECULAR RAPID COMMUNICATIONS}, author={Leonard, DN and Russell, PE and Smith, SD and Spontak, RJ}, year={2002}, month={Feb}, pages={205–209} }
 @article{leonard_spontak_smith_russell_2002, title={Topological coarsening of low-molecular-weight block copolymer ultrathin films by environmental AFM}, volume={43}, ISSN={["0032-3861"]}, DOI={10.1016/S0032-3861(02)00640-7}, abstractNote={Topological coarsening of block copolymer ultrathin films is well-understood for copolymers exhibiting intermediate or strong segregation and differing in film thickness or molecular weight at temperatures above the upper glass transition temperature (Tg), but below the order–disorder transition (TODT), of the copolymers. More recent studies suggest that the stability and topology of such films differ at temperatures above TODT. In this work, we use environmental atomic force microscopy to examine the effect of temperature on the coarsening of block copolymer ultrathin films in situ. Films measuring ca. 25 nm thick consist of a low-molecular-weight poly(styrene-b-isoprene) diblock copolymer for which the upper Tg and TODT in the bulk are about 42 and 70 °C, respectively. Time-resolved image sequences illustrating surface reorganization are obtained at temperatures below, above and near 70 °C. At temperatures very close to 70 °C, coarsening is found to slow markedly, by almost an order of magnitude relative to what is observed at higher and lower temperatures, suggesting that thermal factors may provide a means by which to inhibit the dewetting of block copolymer ultrathin films.}, number={25}, journal={POLYMER}, author={Leonard, DN and Spontak, RJ and Smith, SD and Russell, PE}, year={2002}, month={Dec}, pages={6719–6726} }
 @article{gonzalez_griffis_miau_russell_2001, title={Chemically enhanced focused ion beam micromachining of copper}, volume={19}, ISSN={["2166-2746"]}, DOI={10.1116/1.1418406}, abstractNote={Chemically enhanced focused ion beam micromachining of thin film Cu on Si substrates has been investigated. Barrier layers and dielectric layers were considered as well. The gases investigated include the Cl containing examples of C2Cl4, C2H4Cl2, and CHCl2CCl3 as well as the oxygen containing gases ethanol, and methanol and water vapor. Crystallographic channeling effect results in nonuniform Cu milling, insufficient selectivity and poor end-point detection. However, the gases investigated were shown to enhance the milling homogeneity, improve the end-point detection, and provide higher selectivity. A Cu/SiO2 selectivity of greater than 4 was obtained when using ethanol as the etching gas.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Gonzalez, JC and Griffis, DP and Miau, TT and Russell, PE}, year={2001}, pages={2539–2542} }
 @article{gonzalez_bunker_russell_2001, title={Minority-carrier diffusion length in a GaN-based light-emitting diode}, volume={79}, ISSN={["0003-6951"]}, DOI={10.1063/1.1400075}, abstractNote={Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a nonzero surface recombination velocity was used to accurately extract the diffusion length of the p- and n-type layers. A minority-carrier diffusion length of Ln=(80±6) nm for electrons in the p-type GaN layer, Lp=(70±4) nm for holes in the n-type GaN:Si,Zn active layer, and Ln=(55±4) nm for electrons in the p-type Al0.1Ga0.9N layer were determined. The results from this model are compared with two simpler and widely used theoretical models.}, number={10}, journal={APPLIED PHYSICS LETTERS}, author={Gonzalez, JC and Bunker, KL and Russell, PE}, year={2001}, month={Sep}, pages={1567–1569} }
 @article{neves_salmon_troughton_russell_2001, title={Self-healing on OPA self-assembled monolayers}, volume={12}, ISSN={["0957-4484"]}, DOI={10.1088/0957-4484/12/3/315}, abstractNote={Controlled scratches on octadecylphosphonic acid self-assembled monolayers were made using atomic force microscopy tips as indenters. Scratch morphological evolution was followed as a function of time, at room temperature, for samples prepared by drip coating and crystal melting methods. Self-healing, ranging from partial to complete, was observed on drip coated samples. However, no substantial healing was observed on crystal melted samples. Such different behaviour is discussed in terms of the scratching mechanism on both sample types.}, number={3}, journal={NANOTECHNOLOGY}, author={Neves, BRA and Salmon, ME and Troughton, EB and Russell, PE}, year={2001}, month={Sep}, pages={285–289} }
 @article{neves_salmon_russell_troughton_2001, title={Spread coating of OPA on mica: From multilayers to self-assembled monolayers}, volume={17}, ISSN={["0743-7463"]}, DOI={10.1021/la010909a}, abstractNote={The process of self-assembled monolayer (SAM) formation by the spread coating of an octadecylphosphonic acid (OPA) solution onto a mica surface is investigated by atomic force microscopy. When concentrated solutions are employed, a novel mechanism of SAM formation is found:  OPA multilayers, mostly bilayers, are initially deposited on the mica surface. As time passes, these large multilayers break apart and evolve into disorganized monolayers. Following a rapid evolution, such monolayers are found to transform into well-ordered OPA self-assembled monolayers.}, number={26}, journal={LANGMUIR}, author={Neves, BRA and Salmon, ME and Russell, PE and Troughton, EB}, year={2001}, month={Dec}, pages={8193–8198} }
 @article{phillips_griffis_russell_2000, title={Channeling effects during focused-ion-beam micromachining of copper}, volume={18}, ISSN={["0734-2101"]}, DOI={10.1116/1.582300}, abstractNote={The rapid introduction of copper metallization for semiconductor devices has prompted increased research into focused-ion-beam micromachining of copper. Studies with the aim of increasing the material removal rate of Cu by focused-ion-beam micromachining have been complicated by variable micromachining behavior apparently resulting from differing Cu film morphologies produced by the various Cu deposition procedures. This work examined the micromachining behavior of thin copper films produced by physical-vapor deposition (PVD) and electroplating, as well as single-crystal copper samples. PVD copper films were found to be preferentially textured along 〈111〉, with a columnar grain structure. Channeling effects within this type of grain structure provide a geometric enhancement of the material removal rate of 30% when the sample normal is tilted 12° from the incident ion beam, regardless of sample rotation. Single-crystal (111) copper was found to exhibit similar material removal rate enhancement (averaged over 360° rotation) when tilted 12°, verifying that the etching enhancement observed in the PVD films is directly related to their 〈111〉 texture. Compared to the PVD film, electroplated (EP) copper thin films contained a significantly more random grain orientation. Consequently, the EP films did not exhibit any appreciable variation in material removal rate beyond the expected cosine dependence when tilted with respect to the incident Ga+ beam normal. Micromachining of the electroplated films, which have larger randomly oriented grains, results in grain decoration due to preferential etching producing severe micromachining-induced topography.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Phillips, JR and Griffis, DP and Russell, PE}, year={2000}, pages={1061–1065} }
 @article{jarausch_kiely_houston_russell_2000, title={Defect-dependent elasticity: Nanoindentation as a probe of stress state}, volume={15}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2000.0244}, abstractNote={Using an interfacial force microscope, the measured elastic response of 100-nm-thick Au films was found to be strongly correlated with the films' stress state and thermal history. Large, reversible variations (2×) of indentation modulus were recorded as a function of applied stress. Low-temperature annealing caused permanent changes in the films' measured elastic properties. The measured elastic response was also found to vary in close proximity to grain boundaries in thin films and near surface steps on single-crystal surfaces. These results demonstrate a complex interdependence of stress state, defect structure, and elastic properties in thin metallic films.}, number={8}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Jarausch, KF and Kiely, JD and Houston, JE and Russell, PE}, year={2000}, month={Aug}, pages={1693–1701} }
 @inbook{leonard_spontak_russell_2000, title={Environmental atomic force microscopy: Probing diblock polymer thin films and self-assembling molecules at various temperatures and pressures}, volume={165}, ISBN={0750306858}, number={2000}, booktitle={Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000}, publisher={Bristol: Institute of Physics Publishing}, author={Leonard, D. N. and Spontak, R. J. and Russell, P. E.}, editor={Williams, D. B. and Shimizu, R.Editors}, year={2000}, pages={389–390} }
 @misc{russell_griffis_shedd_stark_vitarelli_2000, title={Method for water vapor enhanced charged-particle-beam machining}, volume={6,140,655}, number={2000 Oct. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Russell, P. E. and Griffis, D. P. and Shedd, G. M. and Stark, T. J. and Vitarelli, J.}, year={2000} }
 @inbook{neves_salmon_leonard_troughton_russell_2000, title={Scratching and healing investigations on self-assembled monolayers using Atomic Force Microscopy}, volume={165}, ISBN={0750306858}, number={2000}, booktitle={Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000}, publisher={Bristol: Institute of Physics Publishing}, author={Neves, B. R. A. and Salmon, M. E. and Leonard, D. N. and Troughton, E. B. and Russell, P. E.}, editor={Williams, D. B. and Shimizu, R.Editors}, year={2000}, pages={367–368} }
 @misc{neves_salmon_russell_troughton_2000, title={Thermal stability study of self-assembled monolayers on mica}, volume={16}, number={6}, journal={Langmuir}, author={Neves, B. R. A. and Salmon, M. E. and Russell, P. E. and Troughton, E. B.}, year={2000}, pages={2409–2412} }
 @article{neves_salmon_russell_troughton_1999, title={Comparative study of field emission-scanning electron microscopy and atomic force microscopy to assess self-assembled monolayer coverage on any type of substrate}, volume={5}, ISSN={["1431-9276"]}, DOI={10.1017/S1431927699990475}, abstractNote={Abstract: In this work, we show how field emission–scanning electron microscopy (FE-SEM) can be a useful tool for the study of self-assembled monolayer systems. We have carried out a comparative study using FE-SEM and atomic force microscopy (AFM) to assess the morphology and coverage of self-assembled monolayers (SAM) on different substrates. The results show that FE-SEM images present the same qualitative information obtained by AFM images when the SAM is deposited on a smooth substrate (e.g., mica). Further experiments with rough substrates (e.g., Al grains on glass) show that FE-SEM is capable of unambiguously identifying SAMs on any type of substrate, whereas AFM has significant difficulties in identifying SAMs on rough surfaces.}, number={6}, journal={MICROSCOPY AND MICROANALYSIS}, author={Neves, BRA and Salmon, ME and Russell, PE and Troughton, EB}, year={1999}, pages={413–419} }
 @article{neves_vilela_russell_reis_andrade_1999, title={Imaging micro-cracks in gold films: a comparative study of scanning tunneling and atomic force microscopies}, volume={76}, ISSN={["0304-3991"]}, DOI={10.1016/S0304-3991(98)00071-0}, abstractNote={In this work, three different scanning probe microscopy (SPM) modes, scanning tunneling microscopy, atomic force microscopy (AFM) -intermittent contact mode; and AFM-contact mode, are compared by imaging micro-cracks on a thin Au film. The excellent capability of SPM techniques to image prominences are confirmed by easily imaging Au particles. Their capabilities to image surface cavities are also analyzed, with an indication that the AFM-intermittent contact mode, using etched Silicon tips, is close to its resolution limit. These results are discussed in terms of spatial extension of the interaction and tip radius of curvature. It is also found that the AFM-contact images undergo an evolution with time producing sharper images. Several possibilities to this effect are reviewed, resulting in an indication that AFM-intermittent contact and AFM-contact images, in this case, are generated by different tip–sample interaction processes in the nanometric scale.}, number={1-2}, journal={ULTRAMICROSCOPY}, author={Neves, BRA and Vilela, JMC and Russell, PE and Reis, ACC and Andrade, MS}, year={1999}, month={Feb}, pages={61–67} }
 @article{kiely_jarausch_houston_russell_1999, title={Initial stages of yield in nanoindentation}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0298}, abstractNote={We have used the interfacial force microscope to perform nanoindentations on Au single-crystal surfaces. We have observed two distinct regimes of plastic deformation, which are distinguished by the magnitude of discontinuities in load relaxation. At lower stresses, relaxation occurs in small deviations from elastic behavior, while at the higher stresses they take the form of large load drops, often resulting in complete relaxation of the applied load. These major events create a relatively wide plastic zone that subsequently deepens more rapidly than it widens. We discuss these findings in terms of contrasting models of dislocation processes in the two regimes.}, number={6}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kiely, JD and Jarausch, KF and Houston, JE and Russell, PE}, year={1999}, month={Jun}, pages={2219–2227} }
 @misc{russell_griffis_shedd_stark_vitarelli_1999, title={Method for water vapor enhanced charged-particle-beam machining}, volume={5,958,799}, number={1999 Sept. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Russell, P. E. and Griffis, D. P. and Shedd, G. M. and Stark, T. J. and Vitarelli, J.}, year={1999} }
 @article{neves_leonard_salmon_russell_troughton_1999, title={Observation of topography inversion in atomic force microscopy of self-assembled monolayers}, volume={10}, ISSN={["0957-4484"]}, DOI={10.1088/0957-4484/10/4/307}, abstractNote={In this paper, we report on atomic force microscopy (AFM) investigation of a self-assembled monolayer (SAM) system - octadecylphosphonic acid (OPA) deposited on mica. With the deposition methods employed in this work, the SAM presents a partial coverage, i.e., the OPA covers only a fraction of the mica surface and, therefore, some bare mica regions are observed. Using standard intermittent contact AFM (IC-AFM) techniques (with medium to high oscillation damping), the topographic profile of this system clearly shows the flat SAM on top of the mica surface. However, when a small oscillation damping mode is employed, the topographic profile is inverted, i.e., the mica regions appear higher than the surrounding OPA layer. AFM experiments, carried out to assess the origin of this effect, yield strong evidences that it is related to the presence of a water contamination layer on the bare mica regions only. A semi-quantitative model is utilized to understand the experimental results.}, number={4}, journal={NANOTECHNOLOGY}, author={Neves, BRA and Leonard, DN and Salmon, ME and Russell, PE and Troughton, EB}, year={1999}, month={Dec}, pages={399–404} }
 @article{russell_stark_griffis_phillips_jarausch_1998, title={Chemically and geometrically enhanced focused ion beam micromachining}, volume={16}, ISSN={["1071-1023"]}, DOI={10.1116/1.590197}, abstractNote={Improvements in focused ion beam (FIB) material removal rates utilizing geometric and chemical enhancement were investigated. Geometrical optimization of FIB micromachining of Permalloy and diamond was investigated to determine the magnitude of material removal rate gains that could be attained by increasing the angle of the ion beam with respect to the sample surface normal. The combination of geometrical optimization with chemical enhancement (C2Cl4 for Permalloy and H2O and XeF2 for diamond) was then investigated to determine whether additional gains in material removal rate could be attained. FIB sharpening of a diamond nanoindenter tip is also presented as a practical example of diamond micromachining with H2O as the removal rate enhancing species.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Russell, PE and Stark, TJ and Griffis, DP and Phillips, JR and Jarausch, KF}, year={1998}, pages={2494–2498} }
 @misc{musselman_russell_1992, title={Method of fabricating scanning tunneling microscope tips}, volume={5085746}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Musselman, I. H. and Russell, P. E.}, year={1992} }
 @misc{musselman_russell_1992, title={Scanning tunneling microscope tips}, volume={5164595}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Musselman, I. H. and Russell, P. E.}, year={1992} }