Jie J. Sun

Sun, J. J., Tsai, J. Y., & Osburn, C. M. (1998). Elevated n(+)/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(9), 1946–1952. https://doi.org/10.1109/16.711360

Sun, J. J., & Osburn, C. M. (1998). Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1377–1380. https://doi.org/10.1109/16.678583

Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1998). Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131–2137. https://doi.org/10.1149/1.1838607

Srivastava, A., Sun, J., Bellur, K., Bartholomew, R. F., O'Neil, P., Celik, S. M., … Fowler, B. (1997). A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy. ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1997). A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659–3664. https://doi.org/10.1149/1.1838066

Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1997). Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology. ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

Sun, J. J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., & Masnari, N. A. (1997). The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491–1498. https://doi.org/10.1109/16.622606

Sun, J., Bartholomew, R. F., Bellur, K., ONeil, P. A., Srivastava, A., Violette, K. E., … Masnari, N. A. (1996). Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition. RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347. https://doi.org/10.1557/proc-429-343