David Venables

Ban, I., Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999). A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196. https://doi.org/10.1149/1.1391744

Diebold, A. C., Venables, D., Chabal, Y., Muller, D., Weldon, M., & Garfunkel, E. (1999). [Review of Characterization and production metrology of thin transistor gate oxide films]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2(2), 103–147. https://doi.org/10.1016/S1369-8001(99)00009-8

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, JR, Wortman, J. J., Venables, R. D., … Venables, D. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181. https://doi.org/10.1109/55.753759

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., Xu, M. M., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078. https://doi.org/10.1149/1.1392052

PA O'Neil, Ozturk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999). Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086. https://doi.org/10.1149/1.1392053

Neogi, S. S., Venables, D., Na, Z. Y., & Maher, D. M. (1998). Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475. https://doi.org/10.1116/1.589832

Venables, D., Jain, H., & Collins, D. C. (1998). Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362–366.

Krishnamoorthy, V., Moller, K., Jones, K. S., Venables, D., Jackson, J., & Rubin, L. (1998). Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si. JOURNAL OF APPLIED PHYSICS, 84(11), 5997–6002. https://doi.org/10.1063/1.368896

Neogi, S. S., Venables, D., Ma, Z. Y., Maher, D. M., Taylor, M., & Corcoran, S. (1997). Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique. JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815. https://doi.org/10.1063/1.366449

Jones, K. S., Chen, J., Bharatan, S., Jackson, J., Rubin, L., PugaLambers, M., & Venables, D. (1997, November). The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon. JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 1361–1364. https://doi.org/10.1007/s11664-997-0085-9