Brandon Lea Ward

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (2000). Measurement of field emission from nitrogen-doped diamond films. DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1569–1573. https://doi.org/10.1016/S0925-9635(00)00304-6

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000). Schottky barrier height and electron affinity of titanium on AIN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087. https://doi.org/10.1116/1.1303733

Sowers, A. T., Ward, B. L., English, S. L., & Nemanich, R. J. (1999). Field emission properties of nitrogen-doped diamond films. JOURNAL OF APPLIED PHYSICS, 86(7), 3973–3982. https://doi.org/10.1063/1.371316

Nemanich, R. J., English, S. L., Hartman, J. D., Sowers, A. T., Ward, B. L., Ade, H., & Davis, R. F. (1999, May). Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy. APPLIED SURFACE SCIENCE, Vol. 146, pp. 287–294. https://doi.org/10.1016/S0169-4332(99)00021-5

Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177. https://doi.org/10.1116/1.581745

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., English, S. L., Hartman, J. D., Sowers, A. T., & Ward, B. L. (1998). Characterization of electron emitting surfaces of diamond and III-V nitrides. Diamond Films and Technology, 8(4), 211–223.

Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242. https://doi.org/10.1063/1.368775

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., Nam, O. H., Sowers, A. T., Ward, B. L., … Davis, R. F. (1998, June). Electron emission properties of crystalline diamond and III-nitride surfaces. APPLIED SURFACE SCIENCE, Vol. 130, pp. 694–703. https://doi.org/10.1016/s0169-4332(98)00140-8

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051. https://doi.org/10.1063/1.368752

Baumann, P. K., Bozeman, S. P., Ward, B. L., & Nemanich, R. J. (1997, March). Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 398–402. https://doi.org/10.1016/S0925-9635(96)00601-2

Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R. J., & Davis, R. F. (1997). Growth of GaN and Al0.2Ga0.8N on patterened substrates via organometallic vapor phase epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 36(5A), L532–L535. https://doi.org/10.1143/JJAP.36.L532

Sowers, A. T., Christman, J. A., Bremser, M. D., Ward, B. L., Davis, R. F., & Nemanich, R. J. (1997). Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications. Applied Physics Letters, 71(16), 2289–2291. https://doi.org/10.1063/1.120052