T. W., Jr. Weeks

Gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

Method of manufacturing gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material devices and methods of forming the same

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride materials including thermally conductive regions

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride material devices and methods including backside vias

Washington, DC: U.S. Patent and Trademark Office.

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

ELECTRONICS LETTERS, 33(18), 1556–1557.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.