Works (12)

2008 patent

Gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Method of manufacturing gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Gallium nitride material devices and methods of forming the same

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Gallium nitride materials including thermally conductive regions

Washington, DC: U.S. Patent and Trademark Office.

By: R. Borges, K. Linthicum, T. Weeks & T. Gehrke

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride material devices and methods including backside vias

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, R. Borges & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, T. Gehrke & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin Solid Films, 313(1998 Feb.), 187–192.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-State Electronics, 41(2), 129–134.

By: R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

Electronics Letters, 33(18), 1556–1557.

By: G. Bulman, K. Doverspike, S. Sheppard, T. Weeks, H. Kong, H. Dieringer, J. Edmond, J. Brown, J. Swindell, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 50(1-3), 134–141.

By: N. Edwards, S. Yoo, M. Bremser, T. Zheleva, M. Horton, N. Perkins, T. Weeks, H. Liu ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Applied Physics Letters, 70(1997), 2001.

By: N. Edwards, M. Bremser, T. Weeks, O. Nam, R. Davis, H. Liu, R. Stall, M. Horton ...

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018