T. W., Jr. Weeks

Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Gallium nitride based high-electron mobility devices. Washington, DC: U.S. Patent and Trademark Office.

Harris, C., Gehrke, T., Weeks, T. W., & Basceri, C. (2008). Method of manufacturing gallium nitride based high-electron mobility devices. Washington, DC: U.S. Patent and Trademark Office.

Weeks, T. W., & Linthicum, K. J. (2007). Gallium nitride material devices and methods of forming the same. Washington, DC: U.S. Patent and Trademark Office.

Borges, R., Linthicum, K. J., Weeks, T. W., & Gehrke, T. (2005). Gallium nitride materials including thermally conductive regions. Washington, DC: U.S. Patent and Trademark Office.

Weeks, T. W., Piner, E. L., Borges, R. M., & Linthicum, K. J. (2003). Gallium nitride material devices and methods including backside vias. Washington, DC: U.S. Patent and Trademark Office.

Weeks, T. W., Piner, E. L., Gehrke, T., & Linthicum, K. J. (2003). Gallium nitride materials and methods. Washington, DC: U.S. Patent and Trademark Office.

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. THIN SOLID FILMS, Vol. 313, pp. 187–192. https://doi.org/10.1016/S0040-6090(97)00815-8

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9

Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Kong, H. S., Dieringer, H. M., … Schetzina, J. F. (1997). Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC. ELECTRONICS LETTERS, 33(18), 1556–1557. https://doi.org/10.1049/el:19971025

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7

Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 781–786. https://doi.org/10.1557/proc-449-781